Perovskite LED containing organic-inorganic hybrid perovskite monocrystal light emitting layer, and preparation method

Abstract

The invention provides a perovskite LED containing an organic-inorganic hybrid perovskite monocrystal light emitting layer, and a preparation method of the perovskite LED. The perovskite LED comprisesa CH3NH3PbX3 perovskite monocrystal light emitting layer, a p-type hole transport layer, a transparent conductive anode, an n-type electron transport layer, an electron injection layer and electrodes, wherein X=Cl, Br or I; the p-type hole transport layer is formed on the CH3NH3PbX3 perovskite monocrystal light emitting layer along a first direction; the transparent conductive anode is formed onthe p-type hole transport layer; the n-type electron transport layer is formed on the CH3NH3PbX3 perovskite monocrystal light emitting layer along a second direction opposite to the first direction; the electron injection layer is formed on the n-type electron transport layer; and the electrodes are formed on the electron injection layer. The invention further provides the preparation method of the perovskite LED. The perovskite LED and the preparation method effectively reduce the defect state density of the surface of the light emitting layer, improve the photoelectric property and stabilityof perovskite CH3NH3PbX3, and realize efficient radiative recombination of carriers under electric injection.

Description

technical field [0001] The disclosure relates to the technical field of semiconductor light-emitting devices, in particular to a perovskite LED containing an organic-inorganic hybrid perovskite single-crystal light-emitting layer and a preparation method thereof. Background technique [0002] Organic / inorganic hybrid perovskite materials (CH 3 NH 3 wxya 3 , X=Cl / Br / I) with direct bandgap, high internal quantum efficiency, and excellent optoelectronic properties with tunable light-emitting area, have great potential applications in the fabrication of next-generation high-definition displays and clean lighting systems. However, the commonly used polycrystalline perovskite light-emitting layer, its low coverage, large non-radiative recombination rate, and poor photothermal stability limit the practical application of perovskite LED devices. [0003] Usually, the light-emitting layer of perovskite LED is made of polycrystalline thin film. Due to the rapid crystal nucleation a...

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Problems solved by technology

However, the disadvantage of this device is that the polar solvent chlorobenzene is used as an optimization method during the high-speed glue rejection process, which not only cannot guarantee the repeatability of the device, but also has adverse effects on the experimenters and the environment due to the toxicity of p-chlorobenzene

In 2016, M.J.Yuan et al. used the large cationic group C 8 h 9 NH 3 (PEA) instead of small molecule CH 3 NH 3 , which improves the radiative recombination of the device, suppresses the trap-induced non-radiative recombination, achieves an external quantum efficiency of 8.8%, and a radiation rate of 80Wsr -1 m -2 Although the near-infrared LED device of this kind of device has a high external quantum efficiency, the stability of the device is poor due to ion migration and molecular vibration inside the PEAI molecule.

Unfortunately, these boundaries strongly affect the transport of carriers and play a decisive role in the performance of optoelectronic devices; in addition, due to the existence of boundaries, nanometer-sized holes are inevitably generated in large-area sizes. These holes not only Causes leakage of the device, and can accommodate water vapor and oxygen in the air, affecting the stability of the perovskite LED in the air

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