49results about How to "Increased tensile strain" patented technology

The present invention relates to a high performance heterojunction bipolar transistor (HBT) having a base region with a SiGe-containing layer therein. The SiGe-containing layer is not more than about 100 nm thick and has a predetermined critical germanium content. The SiGe-containing layer further has an average germanium content of not less than about 80% of the predetermined critical germanium content. The present invention also relates to a method for enhancing carrier mobility in a HBT having a SiGe-containing base layer, by uniformly increasing germanium content in the base layer so that the average germanium content therein is not less than 80% of a critical germanium content, which is calculated based on the thickness of the base layer, provided that the base layer is not more than 100 nm thick.

An exemplary embodiment relates to a method for forming a metal oxide semiconductor field effect transistor (MOSFET). The method includes providing a substrate having a gate formed above the substrate and performing at least one of the following depositing steps: depositing a spacer layer and forming a spacer around a gate and gate insulator located above a layer of silicon above the substrate; depositing an etch stop layer above the spacer, the gate, and the layer of silicon; and depositing a dielectric layer above the etch stop layer. At least one of the depositing a spacer layer, depositing an etch stop layer, and depositing a dielectric layer comprises high compression deposition which increases in tensile strain in the layer of silicon.

The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge1-ySny buffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the Ge1-ySny buffer layer using an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.

The present invention introduces a concept of “smart” ribbons, which use functionally tensioned optical fibers during the manufacture of fiber optic ribbons to create fiber ribbons with controlled geometrical configuration, optimized strain distribution and reduced attenuation. The ribbons may have flat or bowed cross section and be straight along the length or curved in its plane, or twisted unidirectionally, or periodically. These shapes and residual stress-strain state are induced and controlled by using tension functions instead of traditional constant-value tension per fiber during the ribbon manufacture. Further, the present invention reduces signal loss and / or attenuation in ribbon fibers caused by an increase in the strain variation from tensile strain to compressive strain along the length of the individual fibers when ribbons are manufactured, stacked, stranded around a strength member or twisted and bent during cable installation. In a first embodiment of the present invention, either a symmetric or non-symmetric load distribution is applied across the fibers being placed or drawn into a ribbon structure to eliminate or control residual twist in a completed fiber ribbon. Additionally, in the present invention, the load distribution on the fibers of a ribbon can be varied (e.g. periodically changed) along the length of the ribbon to provide a ribbon with the required design characteristics for any particular application. In a second embodiment of the invention, a fiber optic ribbon is made up of a plurality of sub-unit ribbons arranged in substantially the same plane. Each sub-unit ribbon includes a plurality of optical fibers coated by sub-unit matrices.