Method of enhancing dopant incorporation in epitaxial film using halogen molecules as reactant in depostion

Abstract

The embodiment of the invention generally relates to a method for forming a silicon epitaxial layer on a semiconductor device. The method provided by the invention comprises heating a substrate disposed in a processing volume of a processing cavity, and exposing the substrate in a catalyst gas or one or more than one deposition gases to perform a deposition technology so as to form the silicon epitaxial layer on the substrate. The catalyst gas comprises halogen molecules, and the one or more than one deposition gases comprise a silicon source and the sources of a dopant. In one embodiment, the catalyst gas comprises chlorine.

Description

technical field [0001] Embodiments of the present invention relate generally to the field of semiconductor fabrication processes and devices, and more particularly, to methods of depositing silicon-containing films for use in forming semiconductor devices. Background technique [0002] The reduction in size of metal-oxide-semiconductor field-effect transistors (MOSFETs) enables continuous improvements in speed performance, density, and cost per function of integrated circuits. The semiconductor industry is also in a period of transition from generally planar 2D transistors to 3D transistors using three-dimensional gate structures. In a 3D gate structure, the channel, source and drain rise from the substrate, and then the gate surrounds the channel on three sides. The goal is to confine current flow to only the raised channel, as well as eliminate any possible paths for leaking electrons. One such type of 3D transistor is called a Fin Field-Effect Transistor (FinFET), in wh...

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Problems solved by technology

While the film growth rate or deposition efficiency of the deposition process gas can be controlled or manipulated by alternately utilizing the etch reaction to perform the deposition reaction, or by separately introducing the etch chemical and the deposition process gas into the reaction chamber under controlled time and process conditions , but this method is complex and time-consuming, thereby affecting throughput and overall productivity

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