The invention discloses a parallel
electron beam imaging photoetching
system based on a micro
electrostatic lens array and a control method, and aims to solve the technical problems that the existing
electron beam photoetching efficiency is low, the
system is complicated, and flexible zooming cannot be realized. The
system sequentially comprises a unified
electron source, a micro
electrostatic lens array, an electron zooming focusing unit, a diaphragm plate and a vacuum sample table along the movement direction of an electron beam, and further comprises a
driving circuit, the uniform
electron source provides large-area uniform electron beams, the micro
electrostatic lens array realizes on-off control of the electron beams through focusing / deflecting electrodes of each unit, the electronic
zoom focusing unit adjusts imaging
magnification through
voltage ratio of multi-stage electrostatic electrodes, the diaphragm plate blocks the electron beams in an off state, and the
driving circuit synchronously controls on-off and
zoom magnification of the array. According to the invention, scanning-free and one-frame parallel
exposure is realized, the imaging scaling can be flexibly adjusted, and the device has the advantages of high integration level, good stability, high
exposure efficiency and strong adaptability, and can be used for high-end
nano manufacturing scenes such as
mask preparation,
quantum devices, advanced packaging and the like.