55 results about "Electron diffraction pattern" patented technology

A method and device for electron diffraction tomography of a crystal sample, which employs scanning of the electron beam over a plurality of discrete locations of the sample, in combination with a beam scanning protocol as the beam converges at every discrete location (42, 43) of the sample (38) to obtain a series of electron diffraction patterns, use of template matching to determine crystal orientations and thickness maps to obtain a common intensity scaling factor.

An aberration-correcting microscopy instrument is provided. The instrument has a first magnetic deflector disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane of the first magnetic deflector. The instrument also has an electrostatic lens disposed in the exit plane of a first magnetic deflector, as well as a second magnetic deflector substantially identical to the first magnetic deflector. The second magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane of the second magnetic deflector. The instrument also has an electron mirror configured for correction of one or more aberrations in the second non-dispersed electron diffraction pattern. The electron mirror is disposed for reflection of the second non-dispersed electron diffraction pattern to the second magnetic deflector for projection of a second energy dispersed electron diffraction pattern in a second exit plane of the second magnetic deflector.

An energy filtering microscopy instrument is provided. An objective lens is disposed for reception of electrons in order to form an electron diffraction pattern in a backfocal plane of the objective lens. An entrance aperture disposed in the backfocal plane of the objective lens for filtering a slice of the electron diffraction pattern. A magnetic deflector has an entrance plane and an exit plane. The entrance aperture is disposed in the entrance plane. The magnetic deflector is disposed to receive the slice of the electron diffraction pattern and project an energy dispersed electron diffraction pattern to the exit plane. An exit aperture is disposed in the exit plane of the magnetic deflector for selection of desired electron energy of the energy dispersed electron diffraction pattern.

An aberration-correcting microscopy instrument is provided. The instrument has a first magnetic deflector (206) disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane (A2) of the first magnetic deflector. The instrument also has an electrostatic lens (224) disposed in the exit plane of a first magnetic deflector, as well as a second magnetic deflector (222) substantially identical to the first magnetic deflector. The second magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane (B2) of the second magnetic deflector. The instrument also has an electron mirror configured for correction of one or more aberrations in the second non-dispersed electron diffraction pattern. The electron mirror (226) is disposed for reflection of the second non-dispersed electron diffraction pattern to the second magnetic deflector for projection of a second energy dispersed electron diffraction pattern in a second exit plane (B3) of the second magnetic deflector.

A device and method which enable a transmission electron microscope to measure electron diffraction patterns of a sample very precisely are disclosed. The patterns are suitable for structure determination. The electron beam is precessed by means of deflector coils (6) in the transmission electron microscope before the sample (4), in combination with a similar precession of the electron diffraction pattern by means of deflector coils (9) situated after the sample. The electron diffraction pattern is scanned by means of deflector coils (9) situated after the sample.

The invention discloses an electrolytic polishing solution of an invar alloy and an electrolytic polishing method. The electrolytic polishing solution of the invar alloy is characterized in that C3H8O2, HClO4 and C2H5OH are mixed according to the volume ratio of 1 to 2 to 17-22; the invar alloy sample is placed in the electrolytic polishing solution as an anode, and insoluble metal is used as a cathode; and the temperature of the electrolytic polishing solution is 0-10 DEG C, the polishing voltage is 30-40 V, and electrolytic polishing is carried out on an invar alloy sample. According to themethod, the polishing solution is simple to prepare and good in polishing effect, the surface of the sample is flat and smooth, no obvious deformation layer is generated, and the polishing solution can be used multiple times; the stress layer on the surface can be effectively removed, the electrolytic polishing quality is effectively improved, and the high-calibration rate electron diffraction pattern is obtained; the electrolytic polishing method can effectively remove the stress layer on the surface of the sample, the electrolytic polishing quality is effectively improved, and the strong diffraction pattern which is generated by the EBSD test is facilitated, so that the high-calibration rate can be obtained, and the research of microstructure of the crystal boundary characteristic, texture, stress strain and the like of the invar alloy is facilitated.

The invention relates to a cutting tool having a substrate base body and a single or multi-layered coating attached thereupon, wherein at least one layer of the coating is a metal oxide layer produced in the PVD process or in the CVD process and the metal oxide layer has a grain structure wherein there is structural disorder within a plurality of the existing grains that are characterized in that in electron diffraction images of the grains, point-shaped reflections occur up to a maximum lattice spacing dGRENZ and for lattice spacing greater than dGRENZ no point-shaped reflections occur, but rather a diffuse intensity distribution typical for amorphous structures.