49 results about "Electron diffraction pattern" patented technology

Systems or techniques are provided for facilitating improved digital twin calibration for scientific instruments. In various embodiments, a system can synchronize, via execution of a state-wide Bayesian filter, a parametric state of a digital twin with a physical state of a scientific instrument. In various instances, the state-wide Bayesian filter can comprise a set of calibration iterations, each of which can comprise a Bayesian update to an entirety of the parametric state based on an iteration-common observable that is exhibitable by the scientific instrument and simulatable by the digital twin. In various cases, the scientific instrument can be a charged-particle microscope, the parametric state of the digital twin can be an aberration coefficient vector of the charged-particle microscope, and the iteration-common observable can be a Fourier transform of a convergent beam electron diffraction pattern of an amorphous carbon specimen captured by the charged-particle microscope.

The crystal structure is determined based on one or more second electron diffraction patterns acquired at a selected ribbon axis with very strong kinetic effect intensity. The zone axis is selected by sorting accessible zone axes determined from the plurality of first electron diffraction patterns.

The invention provides a diffraction image analysis method and device, a diffraction image processing method and device, equipment and a storage medium. The diffraction image analysis method comprises the following steps: acquiring multiple frames of diffraction images acquired in the growth process of a sample, wherein the diffraction images comprise electron diffraction patterns generated by interaction of a high-energy electron beam and the sample; determining an ROI in the diffraction image, and obtaining an image frame sequence and light intensity time sequence data of the ROI; and performing multi-modal analysis on the image frame sequence and the light intensity time sequence data of the ROI to obtain an analysis result. By adopting the technical scheme provided by the invention, the accuracy of diffraction image analysis can be improved.

Provided is a metal oxide film that includes a crystalline part and has high stability of physical properties. The size of the crystalline part is less than or equal to 10 nm, and thus, when the measurement region is greater than or equal to [specific value 1] and less than or equal to [specific value 2], circumferential spots are observed in the nanobeam electron diffraction pattern of the cross-section of the metal oxide film.

In low-energy electron diffraction (LEED), electron diffraction patterns are detected, and images can be formed based on electrons reflected and diffracted from a sample surface. Diffraction patterns can be generated by the interaction of relatively localized coherent electron beams incident on the sample surface (e.g., a selected region of the sample surface). Information from the diffraction patterns can be used to determine (or reconstruct) the structure on the sample surface. Advantageously, selected-area LEED (SA-LEED) or a combination of LEED and stacked imaging (to generate a series of diffraction patterns, each associated with a given particle beam position, wherein particle beams centered at adjacent positions partially overlap) can be used to determine the surface structure of semiconductor wafers via lensless imaging for defect inspection and / or other purposes.

This invention discloses a method for analyzing the features of crystal electron diffraction patterns based on computer vision, belonging to the field of image processing technology. It solves the problems of low detection efficiency in existing technologies, lack of prior knowledge of crystallographic physics constraints, insufficient noise resistance, and lack of end-to-end quantitative analysis in deep learning methods for diffraction patterns. The method includes: constructing an electron diffraction pattern dataset and training a model; detecting local bounding boxes on sub-patterns of the electron diffraction pattern to be inferred according to a set block size and sliding step size, then superimposing pixel offsets to map back to the global coordinate system; removing redundant boxes through non-maximum suppression to generate an initial set of diffraction spot center coordinates; constructing a lattice filtering algorithm based on the random sampling consensus algorithm to eliminate noise interference and obtain a corrected coordinate set; identifying the local diffraction pattern symmetry based on the number and angular features of diffraction spots in the neighborhood and calculating local geometric parameters to generate quantitative characterization data.

A method for analyzing a sample using an electron microscope includes: generating ions, molecules, or other particles, such as droplets, from a target sample; introducing the ions, molecules, or other particles into a vacuum cavity of a transmission electron microscope (TEM) in a direction intersecting the path of a pulsed electron beam; recording an electron diffraction pattern associated with the ions through which the pulse passes at each pulse of the electron beam; and calculating the three-dimensional (3D) structure of the ion species based on the recorded electron diffraction pattern.

A negative electrode active substance layer of a negative electrode for nonaqueous electrolyte secondary battery herein disclosed includes at least a first negative electrode active substance and a second negative electrode active substance. The first negative electrode active substance is configured with an aggregated body of a scaly graphite whose surface of at least one part is covered with a low crystalline carbon. A graphite interlayer distance of the low crystalline carbon is equal to or more than 3.8 Å and not more than 5.0 Å. The second negative electrode active substance is a natural graphite or an artificial graphite whose graphite interlayer distance based on electron diffraction images by the transmission electron microscope is equal to or more than 3.35 Å and not more than 3.4 Å. Here, a mass ratio of the first negative electrode active substance and the second negative electrode active substance is 50:50 to 90:10.

The present application provides a kind of negative electrode for reducing the initial resistance of non-aqueous electrolyte secondary battery and achieving the improvement of durability.The negative electrode for non-aqueous electrolyte secondary battery disclosed herein has a negative electrode current collector and a negative electrode active material layer formed on the negative electrode current collector, and the negative electrode active material layer at least contains a first negative electrode active material and a second negative electrode active material.The first negative electrode active material is composed of agglomerates of flaky graphite coated with low-crystallinity carbon on at least part of the surface, and the interlayer distance of graphite of the low-crystallinity carbon based on the electron diffraction image obtained by transmission electron microscopy is 0.3375 nm.The second negative electrode active material is natural graphite or artificial graphite with an interlayer distance of graphite based on the electron diffraction image obtained by transmission electron microscopy of 0.3375 nm.Here, the mass ratio of the first negative electrode active material to the second negative electrode active material is 50:50 to 90:10.

The invention provides an improved camera for electron diffraction pattern analysis, and particularly relates to a device for detecting a Kikuchi diffraction pattern. The apparatus comprises: an electron column adapted to provide, in use, an electron beam directed toward the sample, the electron beam having an energy in the range of 2 keV to 50 keV, and; an imaging detector for receiving and counting electrons from the sample due to the interaction of the electron beam with the sample, the detector comprising an array of pixels and having a count rate capability of at least 2000 electrons per second for each pixel wherein: the imaging detector is adapted to provide electron energy filtering of the received electrons, the particle detector has an active region and a diffraction pattern for counting received electrons representing said diffraction pattern, and the particle detector has an inert layer on a surface on which electrons enter towards the active region of the detector, where the inert layer disperses the detection energy of 20 keV incident electrons having an energy dispersion of a full width at half maximum of less than 3.2 keV. The invention also provides a method for detecting the Kikuchi diffraction pattern.

To apply an excellent electric characteristic to a semiconductor device.SOLUTION: In an oxide semiconductor film, a plurality of electronic diffraction patterns is observed by irradiating an electronic beam while relatively moving a position of a film and a position of the electronic beam to a formed surface of the oxide semiconductor film by using the electronic beam of which a half value width of a probe diameter is 1nm, and the plurality of electronic diffraction patterns includes fifty or more electronic diffraction patterns observed at a different place each other. A sum of a rate having a first electronic diffraction pattern and a rate having a second electronic diffraction pattern of fifty or more electronic diffraction patterns is 100%, and the rate having the first electronic diffraction pattern is 50% or more. The first electronic diffraction pattern includes an observation point without a symmetric property and a plurality of observation points arranged so as to draw a circle. The second electronic diffraction pattern includes an observation point positioned at a top of a hexagon.SELECTED DRAWING: None

A thin-film transistor comprises a substrate, an oxygen-containing insulating layer deposited over the substrate, an oxide semiconductor layer with a plurality of crystal grains arranged in contact with the insulating layer, a gate electrode arranged over the oxide semiconductor layer, and a gate insulating layer arranged between the oxide semiconductor layer and the gate electrode. If a crystal orientation is determined at each of a plurality of measurement points of the oxide semiconductor layer based on an electron diffraction pattern obtained by transmitting an electron beam from a direction intersecting a thickness direction of the oxide semiconductor layer, an average value of KAM values ​​calculated at the plurality of measurement points is greater than or equal to 0.4 degrees.

The invention relates to digital twin calibration. Systems or techniques are provided for facilitating improved digital twin calibration for scientific instruments. In various embodiments, the system can synchronize a parametric state of the digital twinning with a physical state of the scientific instrument via execution of a full-state Bayesian filter. In various instances, the full-state Bayesian filter can include a set of calibration iterations, each calibration iteration in the set of calibration iterations can include Bayesian updates to all of the parametric states based on iterations that can be presented by the scientific instrument and that can be simulated by the digital twinning that share observable amounts. In various instances, the scientific instrument can be a charged particle microscope, the parametric state of the digital twin can be an aberration coefficient vector of the charged particle microscope, and the iterative common observable quantity can be a Fourier transform of a converged beam electron diffraction pattern of an amorphous carbon sample captured by the charged particle microscope.

The present invention provides a titanium oxide film with excellent anti-reflective properties and manufacturing efficiency, as well as a method for producing the same. [Solution] The titanium oxide film 1 contains a crystal in which a group of Ti2O3 diffraction spots appear in the electron diffraction pattern observed with a transmission electron microscope, and the refractive index when light with a wavelength of 550 nm is incident on it is greater than 2.50 and less than or equal to 2.80.

The present application discloses a method and apparatus for testing the order of a material. The method includes: obtaining a set of electron diffraction patterns of the material, each electron diffraction pattern in the set corresponding to a corresponding one of a plurality of positions in the material; classifying the electron diffraction pattern as an ordered area electron diffraction pattern in response to the electron diffraction pattern in the set including a crystal diffraction feature associated with the material; and determining the order of the material based on the ordered area electron diffraction pattern.

The thin film transistor includes: a substrate; an insulating layer containing oxygen, the insulating layer being formed on the substrate; an oxide semiconductor layer including a plurality of crystal grains, the oxide semiconductor layer being provided in contact with the insulating layer; a gate electrode provided over the oxide semiconductor layer; and a gate insulating layer that is provided between the oxide semiconductor layer and the gate electrode, and that obtains crystal orientation at each of a plurality of measurement points of the oxide semiconductor layer on the basis of an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting the film thickness direction of the oxide semiconductor layer through the oxide semiconductor layer. The average value of the KAM values calculated at the plurality of measurement points is 0.4 DEG or more.

An oxide semiconductor film includes a plurality of crystal grains over a substrate. The oxide semiconductor film includes indium and a first metal element selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. When a crystal orientation at each of a plurality of measurement points of the oxide semiconductor film is obtained based on an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting a thickness direction of the oxide semiconductor film, an average value of KAM values calculated at the plurality of measurement points is greater than or equal to 0.3 degrees.

The invention relates to a Cr-Ti-N alloy film, a Cr-Ti-N alloy coating, an alloy film product and application. The Cr-Ti-N alloy film contains a Cr-Ti-N alloy material and meets the following two characteristics: an X-ray diffraction pattern has a peak in a diffraction angle 2theta (degree) range of 34-50 degrees, and the full width at half maximum of at least one 2theta (degree) diffraction peak in the range of 34-50 degrees is greater than or equal to 1.6 degrees; in a radial intensity profile map corresponding to the selected area electron diffraction pattern, the characteristic atom spacing is used as a horizontal coordinate, the diffraction intensity is used as a vertical coordinate, and a diffraction peak exists in a range; and the full width at half maximum of at least one diffraction peak in the range meets the requirement that the Cr-Ti-N alloy film and the Cr-Ti-N alloy coating have excellent corrosion resistance and high hardness at the same time, and excellent protection capacity can be provided for alloy film products.

To provide a bioceramic that is suitable for artificial bone materials and exhibits superior bioabsorbability.SOLUTION: A bioceramic material comprises: a plurality of bioceramic particles; and a bonding phase that binds the plurality of bioceramic particles to each other, wherein the bonding phase contains Ca and P and is constituted by a matrix phase composed of a first phase and a second phase dispersed within the matrix phase, and a halo pattern is observed in an electron diffraction pattern.SELECTED DRAWING: Figure 1

The invention relates to application of a Cr-Ti-N alloy coating as a conductive coating in a coated product, the coated product comprises a substrate, and the Cr-Ti-N alloy coating is located on at least one part of the surface of the substrate; an X-ray diffraction pattern of the Cr-Ti-N alloy coating has a peak in a diffraction angle 2theta (degree) range of 34-50 degrees, and the full width at half maximum of at least one 2theta (degree) diffraction peak is larger than or equal to 1.6 degrees. A radial intensity profile map corresponding to a selected area electron diffraction pattern of the Cr-Ti-N alloy coating (with the characteristic atom spacing as the abscissa, the characteristic atom spacing as the abscissa, the characteristic atom spacing as the abscissa, the characteristic atom spacing as the abscissa, the characteristic atom spacing as the abscissa and the characteristic atom spacing as the abscissa). With the diffraction intensity as the ordinate), the film has diffraction peaks in the range, and the full width at half maximum of at least one diffraction peak meets the requirement that the square resistance of the surface of the film-coated product is low, for example, the square resistance is smaller than or equal to 12 omega / sq. The Cr-Ti-N alloy coating has metallic luster, good conductivity and excellent corrosion resistance, and can be used as a conductive coating in a coated product.

Methods of collecting diffraction patterns from a microcrystal having an ordered array of a molecule are disclosed, which include using an exposure rate of at most 0.02 electrons per square angstrom per second on the microcrystal and using a direct electron detector to record electron diffraction patterns. Also disclosed are methods of determining a structural model for a molecule, identifying a material present in a trace amount within a sample, identifying a polymorph, and identifying the stereochemistry of a molecule.

The present application relates to a kind of method for determining the relative content of chiral crystal enantiomer and application, comprising the following steps: identifying and marking the coordinate position of all crystals on the grid;In imaging mode, successively collect the low-power image of all crystal samples in the rotation process, calculate the drift path of crystal in the rotation process;In electron diffraction mode, rotate all crystal samples in turn again, and according to the drift path of crystal, move electron beam spot, while collecting electron diffraction pattern, obtain crystal orientation, diffraction integral intensity information;According to crystal orientation information, simulate the three-dimensional electron diffraction data of two enantiomers in crystal sample under the same crystal orientation but different thickness and obtain its diffraction integral intensity;Compare experimental diffraction integral intensity with simulated diffraction integral intensity, determine the absolute structure of single crystal according to matching degree;Statistical analysis obtains the relative content of two enantiomers in crystal sample, solves the problem of enantiomer quantification in chiral powder crystal.

The invention relates to a method for determining the content of enantiomers of chiral crystals and application. The method comprises the following steps: identifying and marking coordinate positions of all crystals on a recording net; sequentially collecting low-power images of all the crystal samples in the rotation process in the imaging mode, and calculating the drift path of the crystal in the rotation process; sequentially rotating all the crystal samples in an electron diffraction mode, moving an electron beam light spot according to a drift path of the crystal, collecting an electron diffraction pattern, and obtaining crystal orientation and diffraction integral intensity information; simulating three-dimensional electron diffraction data of two enantiomers in the crystal sample under the same crystal orientation but different thicknesses according to the crystal orientation information, and obtaining diffraction integral intensity of the two enantiomers; comparing the experimental diffraction integral intensity with the simulated diffraction integral intensity, and determining the absolute structure of the single crystal according to the matching degree; the relative content of the two enantiomers in the crystal sample is obtained through statistical analysis, and the problem of quantification of the enantiomers in the chiral powder crystal is solved.

A coated tool of the present invention includes a base material and a hard coating film on the base material. The hard coating film is a nitride or carbonitride containing aluminum (Al) of 65 atomic % or more 90 atomic % or less, titanium (Ti) of 10 atomic % or more 35 atomic % or less, a total of aluminum (Al) and titanium (Ti) of 85 atomic % or more, and argon (Ar) of 0.20 atomic % or less. The hard coating film satisfies a relationship of Ih×100 / Is≤12 when a peak intensity of a (010) plane of AlN of a hexagonal close-packed structure is Ih and a sum of peak intensities due to predetermined nine crystal planes of TiN and AlN is Is in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope.

The invention discloses an in-situ characterization method for a metal crystal cutting process, which belongs to the field of ultra-precision machining and comprises the following steps: S1, preparing a diamond cutter: preparing a diamond micron slice, cutting a rear cutter surface and a front cutter surface by using current, and polishing the diamond cutter; s2, preparing a workpiece sample: selecting an atomic force microscope probe, preparing a rectangular micron slice by using a focused ion beam micro-nano processing technology, processing a plurality of rectangular slices on the rectangular micron slice by using a focused ion beam, and purging the rectangular slices by using the focused ion beam to complete preparation of the workpiece sample; and S3, cutting experiment: installing the diamond cutter and the workpiece sample on an X-Nano sample rod, cutting the workpiece sample by the diamond cutter, and shooting a bright field image, a dark field image and an electron diffraction pattern of the to-be-detected area by using a transmission electron microscope. According to the invention, the bottleneck that the plastic deformation and fracture behavior of the material in the turning process cannot be dynamically observed in the prior art is broken through.

The application provides an in-situ electron diffraction data processing and analysis method based on machine learning and application, and the method comprises the following steps: automatic calibration of the center of a single frame electron diffraction pattern, automatic detection and tracking of diffraction spots, calculation and calibration of a diffraction ring, and data storage and analysis method for radial radius, light and dark contrast and tangential angle change of a single diffraction spot. The application combines machine learning, image processing and other methods, and realizes qualitative analysis and quantitative calculation of each diffraction spot in each frame of in-situ electron diffraction pattern.

A thin film transistor includes an oxide semiconductor layer including a plurality of crystal grains and provided over a substrate through an insulating layer containing oxygen, a gate electrode provided over the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. When a crystal orientation at each of a plurality of measurement points of the oxide semiconductor layer is obtained based on an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting a thickness direction of the oxide semiconductor layer, an average value of KAM values calculated at the plurality of measurement points is greater than or equal to 0.4 degrees.

A method for detecting diffraction spots in an electron diffraction pattern obtained from a sample, the method comprising the steps: obtaining a first image of the sample, the first image comprising the electron diffraction pattern; obtaining a second image representing a background signal intensity distribution of the first image; defining, for the second image, a plurality of second pixel sets by assigning one or more pixels of the second image to a respective second pixel set based on a pixel value of the pixel, wherein each second pixel set spans a respective pixel value range; and identifying, using first pixel sets in the first image corresponding to respective second pixel sets, any outlier pixels in the first image as being pixels associated with diffraction spots.

The oxide semiconductor film is provided on the substrate and includes a plurality of crystal grains, and the oxide semiconductor film includes indium (In) and a first metal element selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanide elements. When the crystal orientation of each of a plurality of measurement points of the oxide semiconductor film is acquired on the basis of an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting the film thickness direction of the oxide semiconductor film through the oxide semiconductor film, the average value of KAM values calculated at the plurality of measurement points is 0.3 DEG or more.

The present application relates to a Cr-Ti-N alloy film, a Cr-Ti-N alloy coating, an alloy film product, and the use. The Cr-Ti-N alloy film comprises a Cr-Ti-N alloy material, and satisfies the following two characteristics: an X-ray diffraction pattern thereof has a peak when a diffraction angle 2θ(°) is within the range of 34° to 50°, and the full width at half maximum of at least one diffraction peak at 2θ(°) of 34° to 50° is greater than or equal to 1.6°; and in a radial intensity profile corresponding to a selected-area electron diffraction pattern, with the characteristic atomic spacing as the abscissa and the diffraction intensity as the ordinate, there are diffraction peaks within a range of 1.7 Å to 3.0 Å, and the full width at half maximum of at least one diffraction peak within the range of 1.7 Å to 3.0 Å is greater than or equal to 0.19 Å.