31 results about "Electron diffraction pattern" patented technology

The invention provides a diffraction image analysis method and device, a diffraction image processing method and device, equipment and a storage medium. The diffraction image analysis method comprises the following steps: acquiring multiple frames of diffraction images acquired in the growth process of a sample, wherein the diffraction images comprise electron diffraction patterns generated by interaction of a high-energy electron beam and the sample; determining an ROI in the diffraction image, and obtaining an image frame sequence and light intensity time sequence data of the ROI; and performing multi-modal analysis on the image frame sequence and the light intensity time sequence data of the ROI to obtain an analysis result. By adopting the technical scheme provided by the invention, the accuracy of diffraction image analysis can be improved.

In low-energy electron diffraction (LEED), electron diffraction patterns are detected, and images can be formed based on electrons reflected and diffracted from a sample surface. Diffraction patterns can be generated by the interaction of relatively localized coherent electron beams incident on the sample surface (e.g., a selected region of the sample surface). Information from the diffraction patterns can be used to determine (or reconstruct) the structure on the sample surface. Advantageously, selected-area LEED (SA-LEED) or a combination of LEED and stacked imaging (to generate a series of diffraction patterns, each associated with a given particle beam position, wherein particle beams centered at adjacent positions partially overlap) can be used to determine the surface structure of semiconductor wafers via lensless imaging for defect inspection and / or other purposes.

This invention discloses a method for analyzing the features of crystal electron diffraction patterns based on computer vision, belonging to the field of image processing technology. It solves the problems of low detection efficiency in existing technologies, lack of prior knowledge of crystallographic physics constraints, insufficient noise resistance, and lack of end-to-end quantitative analysis in deep learning methods for diffraction patterns. The method includes: constructing an electron diffraction pattern dataset and training a model; detecting local bounding boxes on sub-patterns of the electron diffraction pattern to be inferred according to a set block size and sliding step size, then superimposing pixel offsets to map back to the global coordinate system; removing redundant boxes through non-maximum suppression to generate an initial set of diffraction spot center coordinates; constructing a lattice filtering algorithm based on the random sampling consensus algorithm to eliminate noise interference and obtain a corrected coordinate set; identifying the local diffraction pattern symmetry based on the number and angular features of diffraction spots in the neighborhood and calculating local geometric parameters to generate quantitative characterization data.

A method for analyzing a sample using an electron microscope includes: generating ions, molecules, or other particles, such as droplets, from a target sample; introducing the ions, molecules, or other particles into a vacuum cavity of a transmission electron microscope (TEM) in a direction intersecting the path of a pulsed electron beam; recording an electron diffraction pattern associated with the ions through which the pulse passes at each pulse of the electron beam; and calculating the three-dimensional (3D) structure of the ion species based on the recorded electron diffraction pattern.

A negative electrode active substance layer of a negative electrode for nonaqueous electrolyte secondary battery herein disclosed includes at least a first negative electrode active substance and a second negative electrode active substance. The first negative electrode active substance is configured with an aggregated body of a scaly graphite whose surface of at least one part is covered with a low crystalline carbon. A graphite interlayer distance of the low crystalline carbon is equal to or more than 3.8 Å and not more than 5.0 Å. The second negative electrode active substance is a natural graphite or an artificial graphite whose graphite interlayer distance based on electron diffraction images by the transmission electron microscope is equal to or more than 3.35 Å and not more than 3.4 Å. Here, a mass ratio of the first negative electrode active substance and the second negative electrode active substance is 50:50 to 90:10.

The present application provides a kind of negative electrode for reducing the initial resistance of non-aqueous electrolyte secondary battery and achieving the improvement of durability.The negative electrode for non-aqueous electrolyte secondary battery disclosed herein has a negative electrode current collector and a negative electrode active material layer formed on the negative electrode current collector, and the negative electrode active material layer at least contains a first negative electrode active material and a second negative electrode active material.The first negative electrode active material is composed of agglomerates of flaky graphite coated with low-crystallinity carbon on at least part of the surface, and the interlayer distance of graphite of the low-crystallinity carbon based on the electron diffraction image obtained by transmission electron microscopy is 0.3375 nm.The second negative electrode active material is natural graphite or artificial graphite with an interlayer distance of graphite based on the electron diffraction image obtained by transmission electron microscopy of 0.3375 nm.Here, the mass ratio of the first negative electrode active material to the second negative electrode active material is 50:50 to 90:10.

The invention provides an improved camera for electron diffraction pattern analysis, and particularly relates to a device for detecting a Kikuchi diffraction pattern. The apparatus comprises: an electron column adapted to provide, in use, an electron beam directed toward the sample, the electron beam having an energy in the range of 2 keV to 50 keV, and; an imaging detector for receiving and counting electrons from the sample due to the interaction of the electron beam with the sample, the detector comprising an array of pixels and having a count rate capability of at least 2000 electrons per second for each pixel wherein: the imaging detector is adapted to provide electron energy filtering of the received electrons, the particle detector has an active region and a diffraction pattern for counting received electrons representing said diffraction pattern, and the particle detector has an inert layer on a surface on which electrons enter towards the active region of the detector, where the inert layer disperses the detection energy of 20 keV incident electrons having an energy dispersion of a full width at half maximum of less than 3.2 keV. The invention also provides a method for detecting the Kikuchi diffraction pattern.

A thin-film transistor comprises a substrate, an oxygen-containing insulating layer deposited over the substrate, an oxide semiconductor layer with a plurality of crystal grains arranged in contact with the insulating layer, a gate electrode arranged over the oxide semiconductor layer, and a gate insulating layer arranged between the oxide semiconductor layer and the gate electrode. If a crystal orientation is determined at each of a plurality of measurement points of the oxide semiconductor layer based on an electron diffraction pattern obtained by transmitting an electron beam from a direction intersecting a thickness direction of the oxide semiconductor layer, an average value of KAM values ​​calculated at the plurality of measurement points is greater than or equal to 0.4 degrees.

The present invention provides a titanium oxide film with excellent anti-reflective properties and manufacturing efficiency, as well as a method for producing the same. [Solution] The titanium oxide film 1 contains a crystal in which a group of Ti2O3 diffraction spots appear in the electron diffraction pattern observed with a transmission electron microscope, and the refractive index when light with a wavelength of 550 nm is incident on it is greater than 2.50 and less than or equal to 2.80.

An oxide semiconductor film includes a plurality of crystal grains over a substrate. The oxide semiconductor film includes indium and a first metal element selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. When a crystal orientation at each of a plurality of measurement points of the oxide semiconductor film is obtained based on an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting a thickness direction of the oxide semiconductor film, an average value of KAM values calculated at the plurality of measurement points is greater than or equal to 0.3 degrees.

The invention relates to a Cr-Ti-N alloy film, a Cr-Ti-N alloy coating, an alloy film product and application. The Cr-Ti-N alloy film contains a Cr-Ti-N alloy material and meets the following two characteristics: an X-ray diffraction pattern has a peak in a diffraction angle 2theta (degree) range of 34-50 degrees, and the full width at half maximum of at least one 2theta (degree) diffraction peak in the range of 34-50 degrees is greater than or equal to 1.6 degrees; in a radial intensity profile map corresponding to the selected area electron diffraction pattern, the characteristic atom spacing is used as a horizontal coordinate, the diffraction intensity is used as a vertical coordinate, and a diffraction peak exists in a range; and the full width at half maximum of at least one diffraction peak in the range meets the requirement that the Cr-Ti-N alloy film and the Cr-Ti-N alloy coating have excellent corrosion resistance and high hardness at the same time, and excellent protection capacity can be provided for alloy film products.

The invention relates to application of a Cr-Ti-N alloy coating as a conductive coating in a coated product, the coated product comprises a substrate, and the Cr-Ti-N alloy coating is located on at least one part of the surface of the substrate; an X-ray diffraction pattern of the Cr-Ti-N alloy coating has a peak in a diffraction angle 2theta (degree) range of 34-50 degrees, and the full width at half maximum of at least one 2theta (degree) diffraction peak is larger than or equal to 1.6 degrees. A radial intensity profile map corresponding to a selected area electron diffraction pattern of the Cr-Ti-N alloy coating (with the characteristic atom spacing as the abscissa, the characteristic atom spacing as the abscissa, the characteristic atom spacing as the abscissa, the characteristic atom spacing as the abscissa, the characteristic atom spacing as the abscissa and the characteristic atom spacing as the abscissa). With the diffraction intensity as the ordinate), the film has diffraction peaks in the range, and the full width at half maximum of at least one diffraction peak meets the requirement that the square resistance of the surface of the film-coated product is low, for example, the square resistance is smaller than or equal to 12 omega / sq. The Cr-Ti-N alloy coating has metallic luster, good conductivity and excellent corrosion resistance, and can be used as a conductive coating in a coated product.

Methods of collecting diffraction patterns from a microcrystal having an ordered array of a molecule are disclosed, which include using an exposure rate of at most 0.02 electrons per square angstrom per second on the microcrystal and using a direct electron detector to record electron diffraction patterns. Also disclosed are methods of determining a structural model for a molecule, identifying a material present in a trace amount within a sample, identifying a polymorph, and identifying the stereochemistry of a molecule.

The present application relates to a kind of method for determining the relative content of chiral crystal enantiomer and application, comprising the following steps: identifying and marking the coordinate position of all crystals on the grid;In imaging mode, successively collect the low-power image of all crystal samples in the rotation process, calculate the drift path of crystal in the rotation process;In electron diffraction mode, rotate all crystal samples in turn again, and according to the drift path of crystal, move electron beam spot, while collecting electron diffraction pattern, obtain crystal orientation, diffraction integral intensity information;According to crystal orientation information, simulate the three-dimensional electron diffraction data of two enantiomers in crystal sample under the same crystal orientation but different thickness and obtain its diffraction integral intensity;Compare experimental diffraction integral intensity with simulated diffraction integral intensity, determine the absolute structure of single crystal according to matching degree;Statistical analysis obtains the relative content of two enantiomers in crystal sample, solves the problem of enantiomer quantification in chiral powder crystal.

A coated tool of the present invention includes a base material and a hard coating film on the base material. The hard coating film is a nitride or carbonitride containing aluminum (Al) of 65 atomic % or more 90 atomic % or less, titanium (Ti) of 10 atomic % or more 35 atomic % or less, a total of aluminum (Al) and titanium (Ti) of 85 atomic % or more, and argon (Ar) of 0.20 atomic % or less. The hard coating film satisfies a relationship of Ih×100 / Is≤12 when a peak intensity of a (010) plane of AlN of a hexagonal close-packed structure is Ih and a sum of peak intensities due to predetermined nine crystal planes of TiN and AlN is Is in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope.

The application provides an in-situ electron diffraction data processing and analysis method based on machine learning and application, and the method comprises the following steps: automatic calibration of the center of a single frame electron diffraction pattern, automatic detection and tracking of diffraction spots, calculation and calibration of a diffraction ring, and data storage and analysis method for radial radius, light and dark contrast and tangential angle change of a single diffraction spot. The application combines machine learning, image processing and other methods, and realizes qualitative analysis and quantitative calculation of each diffraction spot in each frame of in-situ electron diffraction pattern.

A thin film transistor includes an oxide semiconductor layer including a plurality of crystal grains and provided over a substrate through an insulating layer containing oxygen, a gate electrode provided over the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. When a crystal orientation at each of a plurality of measurement points of the oxide semiconductor layer is obtained based on an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting a thickness direction of the oxide semiconductor layer, an average value of KAM values calculated at the plurality of measurement points is greater than or equal to 0.4 degrees.

A method for detecting diffraction spots in an electron diffraction pattern obtained from a sample, the method comprising the steps: obtaining a first image of the sample, the first image comprising the electron diffraction pattern; obtaining a second image representing a background signal intensity distribution of the first image; defining, for the second image, a plurality of second pixel sets by assigning one or more pixels of the second image to a respective second pixel set based on a pixel value of the pixel, wherein each second pixel set spans a respective pixel value range; and identifying, using first pixel sets in the first image corresponding to respective second pixel sets, any outlier pixels in the first image as being pixels associated with diffraction spots.

The present application relates to a Cr-Ti-N alloy film, a Cr-Ti-N alloy coating, an alloy film product, and the use. The Cr-Ti-N alloy film comprises a Cr-Ti-N alloy material, and satisfies the following two characteristics: an X-ray diffraction pattern thereof has a peak when a diffraction angle 2θ(°) is within the range of 34° to 50°, and the full width at half maximum of at least one diffraction peak at 2θ(°) of 34° to 50° is greater than or equal to 1.6°; and in a radial intensity profile corresponding to a selected-area electron diffraction pattern, with the characteristic atomic spacing as the abscissa and the diffraction intensity as the ordinate, there are diffraction peaks within a range of 1.7 Å to 3.0 Å, and the full width at half maximum of at least one diffraction peak within the range of 1.7 Å to 3.0 Å is greater than or equal to 0.19 Å.

This invention belongs to the field of electron backscatter diffraction (EBSD) characterization technology, and more specifically relates to a mechanical polishing method for preparing EBSD samples of steel. The invention involves graded grinding and coarse polishing of the steel to be tested, followed by stress-relief fine polishing, dehydration, and drying to obtain the EBSD sample. The stress-relief polishing solution used in the fine polishing comprises a 98 wt% nano-silica suspension polishing solution, a surfactant, a detergent, and water. This method requires only mechanical polishing to prepare highly calibrated electron diffraction patterns, significantly shortening the exploration time.

The invention relates to the technical field of material science and solid mechanics, and discloses a method and system for representing densification of an amorphous material under mechanical deformation, and the method comprises the following steps: applying a mechanical load to the amorphous material to initiate local plastic deformation of the amorphous material; milling the deformed region of the amorphous material by adopting a focused ion beam technology to prepare a cross-section sample, and then obtaining the microstructure change of the cross-section sample through a transmission electron microscope to confirm the densified region of the cross-section sample; the degree of densification of the cross-sectional sample is detected and quantified by analyzing an electron diffraction pattern. According to the embodiment of the invention, the key challenge of accurately quantifying the local structure change (the most significant is permanent volume compression (densification)) in the amorphous material under the action of various contact-induced mechanical loads is solved.

An oxide semiconductor film comprises a multitude of crystal grains over a substrate. The oxide semiconductor film contains indium and a first metallic element selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanide elements. When a crystal orientation is determined at each of a multitude of measurement points of the oxide semiconductor film based on an electron diffraction pattern obtained by transmitting an electron beam from a direction intersecting a thickness direction of the oxide semiconductor film, the average of a KAM value calculated at a multitude of measurement points is greater than or equal to 0.3 degrees.

This application relates to the field of materials growth and discloses an epitaxial layer and a method for controlling its growth. The method includes: growing a gallium oxide film on the surface of a substrate and acquiring a reflective high-energy electron diffraction (HEED) image of the gallium oxide film in real time; determining the HEED intensity based on the HEED image and determining the relationship between the HEED intensity and the growth time of the gallium oxide film; comparing the relationship with a standard relationship between the HEED intensity and growth time during gallium oxide monolayer growth to determine the growth mode of the gallium oxide film. The method of this application does not rely on human experience for judgment and can accurately determine whether the gallium oxide film is grown as a monolayer, thus obtaining a gallium oxide film grown as a monolayer.

The present coated cutting tool includes a substrate with a coating including a layer of TixAlyCrzSivN, where x is 0.30-0.50, y is 0.25-0.45, z is 0.05-0.15, and v is 0.10-0.20, x+y+z+v=1. The layer has a cubic phase with a distribution of unit cell lengths within the range 3.96 to 4.22 Å for the cubic cell. The unit cell length range 3.96 to 4.22 Å includes more than one intensity maximum in an averaged radial intensity profile of an electron diffraction pattern.

A laminate (1) includes a substrate (2), a protective layer (3), and a titanium oxide film (4) in this order toward one side in the thickness direction. The titanium oxide film (4) includes crystals that show a group of Ti2O3 diffraction spots in an electron beam diffraction image observed with a transmission electron microscope, wherein a refractive index when light with a wavelength of 550 nm is incident thereon exceeds 2.50 but 2.80 or less.

A thin film transistor includes a metal oxide layer provided over a substrate, an oxide semiconductor layer including a plurality of crystal grains and provided in contact with the metal oxide layer, a gate electrode provided over the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. When a crystal orientation at each of a plurality of measurement points of the oxide semiconductor layer is obtained based on an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting a thickness direction of the oxide semiconductor layer, an average KAM value calculated at the plurality of measurement points is greater than or equal to 0.6 degrees.

The present invention provides a laminate having a titanium oxide film that does not damage the substrate surface and has excellent manufacturing efficiency and anti-reflective performance, a method for manufacturing the same, and an anti-reflective film. [Solution] The laminate 1 comprises a substrate 2, a protective layer 3, and a titanium oxide film 4 in order toward one side in the thickness direction. The titanium oxide film 4 contains crystals in which a group of Ti2O3 diffraction spots appear in the electron diffraction pattern observed with a transmission electron microscope, and its refractive index when incident with light of a wavelength of 550 nm is greater than 2.50 and less than or equal to 2.80.

The application discloses a method for quickly realizing crystallographic orientation imaging in a transmission electron microscope, and comprises the following steps: collecting 3-5 sample inclination under the first 8-10 diffraction ring conical scanning dark field images by a transmission electron microscope; carrying out drift correction on the dark field images under different sample inclinations, and then binarizing all the dark field images; building an incident electron beam conical scanning model, simulating electron diffraction patterns of any orientation under different sample inclinations, and constructing an electron diffraction pattern database; reconstructing the diffraction pattern of each pixel in the dark field image under the same sample inclination, and calibrating the orientation of all the pixels; and combining the data of multiple sample inclinations to complete the orientation calibration of all the pixels. The application realizes the quick characterization of grain orientation based on the transmission electron microscope conical scanning dark field imaging technology and the crystallographic orientation calibration algorithm, and is suitable for the crystallographic orientation characterization of crystal materials under the transmission electron microscope.

The present application relates to a Cr-Ti-N alloy film, a Cr-Ti-N alloy coating, an alloy film product, and the use. The Cr-Ti-N alloy film comprises a Cr-Ti-N alloy material, and satisfies the following two characteristics: an X-ray diffraction pattern thereof has a peak when a diffraction angle 2θ(°) is within the range of 34° to 50°, and the full width at half maximum of at least one diffraction peak at 2θ(°) of 34° to 50° is greater than or equal to 1.6°; and in a radial intensity profile corresponding to a selected-area electron diffraction pattern, with the characteristic atomic spacing as the abscissa and the diffraction intensity as the ordinate, there are diffraction peaks within a range of 1.7 Å to 3.0 Å, and the full width at half maximum of at least one diffraction peak within the range of 1.7 Å to 3.0 Å is greater than or equal to 0.19 Å.

The application discloses a kind of in-situ characterization methods of metal crystal cutting process, belong to ultra-precision machining field, including steps: step S1, preparation diamond tool: preparation diamond micron flake, use current to cut out relief surface, rake face, diamond tool polishing treatment;Step S2, preparation workpiece sample: select atomic force microscope probe, use focused ion beam micro-nano machining technology to prepare rectangular micron flake, several rectangular flake are machined in rectangular micron flake by focused ion beam, the preparation of workpiece sample is completed by using focused ion beam to blow rectangular flake;Step S3, cutting experiment: diamond tool, workpiece sample is installed in X-Nano sample rod, diamond tool is cut to workpiece sample, and bright field image, dark field image, electron diffraction pattern of the region to be measured are photographed using transmission electron microscope.The application breaks through the bottleneck that material plastic deformation and fracture behavior in turning process cannot be dynamically observed previously.