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Method for reconstructing crystal Bravais lattice by using electron diffraction pattern

A technology of electron diffraction and Bravais, which is applied to the use of wave/particle radiation for material analysis, instruments, measuring devices, etc., can solve problems such as poor crystallization, difficulty in accurately extracting peak position and peak intensity information, and achieve simplified crystal tilt. turn effect

Active Publication Date: 2021-05-11
MINZU UNIVERSITY OF CHINA
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Problems solved by technology

Using X-ray diffraction technology, the Bravais lattice of single-phase powder crystals can be quickly determined; for composite materials or mixtures with poor crystallization and multi-phase, it is difficult to accurately extract the peak position and peak intensity information of the diffraction peaks of each phase. It is difficult to accurately determine the Bravais lattice of materials using X-ray diffraction techniques

Method used

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  • Method for reconstructing crystal Bravais lattice by using electron diffraction pattern
  • Method for reconstructing crystal Bravais lattice by using electron diffraction pattern
  • Method for reconstructing crystal Bravais lattice by using electron diffraction pattern

Examples

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Embodiment 1

[0068] Example 1 Determining the Bravais lattice of the crystal by using two electron diffractions under the condition of deviating from the positive band axis

[0069] 1) In the JEOL JEM-2100 transmission electron microscope, record two belt-axis electron diffraction patterns of a certain crystal grain at 200kV, such as figure 1 shown. figure 1 The electron diffraction pattern in a obviously deviates from the positive band axis condition, figure 1 b contains higher-order Laue diffraction rings.

[0070] 2) Measure the two-dimensional primordial cell on zero-order Laue diffraction

[0071] Take the transmission spot as the origin of the two-dimensional primary cell, and use the nearest neighbor diffraction points A and B as the adjacent sides to form a parallelogram to construct a two-dimensional primary cell. According to this method, use the two electron diffraction patterns recorded in step 1) Two sets of two-dimensional primordial cells are obtained, denoted as R 11 , ...

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Abstract

The invention belongs to the technical field of material microstructure analysis and crystal structure characterization, and particularly relates to a method for reconstructing a crystal Bravais lattice by using an electron diffraction pattern. The method can be used for phase recognition of materials and reconstruction of Brafir of known or unknown phases, and is particularly suitable for occasions where three diffraction patterns are difficult to obtain, a belt axis is strictly tilted, and the tilt angle is accurately determined. For example the following occasion, when the crystal grain is small, the crystallinity is poor, and the crystal surface is uneven, the crystal belt shaft is difficult to strictly tilt, and the tilt angle error is large.

Description

technical field [0001] The invention relates to a method for reconstructing a crystal Bravais lattice by using an electron diffraction pattern, and belongs to the technical field of material microstructure analysis and crystal structure characterization. Background technique [0002] The type and size of Bravais lattices are necessary parameters for crystal structure analysis using X-ray diffraction, electron diffraction, and neutron diffraction. Using X-ray diffraction technology, the Bravais lattice of single-phase powder crystals can be quickly determined; for composite materials or mixtures with poor crystallization and multi-phase, it is difficult to accurately extract the peak position and peak intensity information of the diffraction peaks of each phase. It is difficult to accurately determine the Bravais lattice of materials using X-ray diffraction techniques. [0003] The transmission electron microscope can observe the microstructure of the sample to be tested in ...

Claims

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Application Information

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IPC IPC(8): G01N23/20058
CPCG01N23/20058
Inventor 施洪龙
Owner MINZU UNIVERSITY OF CHINA
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