The invention relates to a photoelectric
detector with
high bandwidth and high
responsivity, which belongs to the field of
semiconductor devices and comprises an InP substrate, and an InP isolation table, an N-type
contact layer, an N-type InP layer, an InGaAs light
absorption layer, a P-type InP layer and a P-type
contact layer which are sequentially grown on the InP substrate, the device is characterized in that a first
grating layer used for reflecting light emitted by the P-type
contact layer to the InGaAs light
absorption layer is arranged on the P-type contact layer, a second
grating layer used for converging, transmitting and automatically
coupling light beams is arranged on one side, back to the InP isolation platform, of the InP substrate, the second
grating layer comprises a plurality of annular grating strips which are concentrically arranged, the
diameter of the InGaAs light
absorption layer is 5-10 m, and the
diameter of the InGaAs light absorption layer is 5-10 m. And the thickness is 500 to 3000 nm. According to the invention, the PD bandwidth can be improved, and the PD
responsivity can be improved and the PD light
coupling difficulty can be reduced at the same time.