The invention relates to a photoelectric 
detector with 
high bandwidth and high 
responsivity, which belongs to the field of 
semiconductor devices and comprises an InP substrate, and an InP isolation table, an N-type 
contact layer, an N-type InP layer, an InGaAs light 
absorption layer, a P-type InP layer and a P-type 
contact layer which are sequentially grown on the InP substrate, the device is characterized in that a first 
grating layer used for reflecting light emitted by the P-type 
contact layer to the InGaAs light 
absorption layer is arranged on the P-type contact layer, a second 
grating layer used for converging, transmitting and automatically 
coupling light beams is arranged on one side, back to the InP isolation platform, of the InP substrate, the second 
grating layer comprises a plurality of annular grating strips which are concentrically arranged, the 
diameter of the InGaAs light 
absorption layer is 5-10 m, and the 
diameter of the InGaAs light absorption layer is 5-10 m. And the thickness is 500 to 3000 nm. According to the invention, the PD bandwidth can be improved, and the PD 
responsivity can be improved and the PD light 
coupling difficulty can be reduced at the same time.