Method for improving large-size monocrystal diamond joint quality

A single crystal diamond, large-size technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of large cracks at the splicing place and poor quality of the splicing area, so as to achieve faster lateral growth and seamless The effect of connection
CN110184653AInactive Publication Date: 2019-08-30UNIV OF SCI & TECH BEIJING
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
UNIV OF SCI & TECH BEIJING
Publication Date
2019-08-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for improving large-size monocrystal diamond joint quality and belongs to the field of monocrystal diamond materials. The method comprises the following steps: simultaneously grinding and polishing two monocrystal diamonds, carrying out groove cutting treatment of different modes on surfaces of the monocrystal diamonds by using a laser etching technique, an electron beam lithography technique, an ICP (inductively coupled plasma) technique or a focused ion beam bombardment method so as to achieve splicing joint groove cutting treatment with a low displacement density and high quality, carrying out splicing growth on the two monocrystal diamonds under a microwave plasma condition, and finally splicing the two monocrystal diamonds in a transverse epitaxial manner, so as to obtain a high-quality large-size monocrystal diamonds without a splicing joint. Due to different micro-groove structures, shielding of microwaves upon plasma can be achieved, then the ratio of a transverse and longitudinal growth velocity can be optimized, furthermore, displacement defects caused by transverse epitaxies can be effectively inhibited, the consequence that a CVD (chemical vapor deposition) growth layer has a polycrystallization phenomenon or a low quality zone of a high displacement density is formed by displacement continuation can be avoided, and improvement of diamond joint quality is achieved.
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Description

technical field

[0001] The invention belongs to the technical field of single crystal diamond material growth; in particular, it relates to a method for improving the seam quality of large-size single crystal diamond by using the periodic groove technology on the splicing surface. After different forms of groove processing, low dislocation density and high-quality splicing seams can be achieved, and finally large-area diamond splicing growth can be realized.

[0002] technical background

[0003] As a wide bandgap semiconductor, single crystal diamond has excellent properties in thermal, mechanical, optical, electrical and other aspects. For example, it has high thermal conductivity and remarkable heat dissipation effect at high temperature; diamond is the hardest natural substance and is widely used as coating material for knives and abrasive tools; diamond has high transmittance in the entire band from ultraviolet to infrared; In addition, diamond has a wide band gap (5.5e...

Claims

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