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Method for improving large-size monocrystal diamond joint quality

A single crystal diamond, large-size technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of large cracks at the splicing place and poor quality of the splicing area, so as to achieve faster lateral growth and seamless The effect of connection

Inactive Publication Date: 2019-08-30
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The key technical problem to be solved by the present invention is to change the general splicing method and solve the problems of large cracks at the splicing place and poor quality of the splicing area caused by the direct splicing of seed crystals

Method used

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  • Method for improving large-size monocrystal diamond joint quality
  • Method for improving large-size monocrystal diamond joint quality
  • Method for improving large-size monocrystal diamond joint quality

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The method of splicing and growing large-size and high-quality single-crystal diamond by laser grooving has the following steps:

[0043] Two pieces of single crystal diamond with side orientation of (100) are selected, the size is 4×4×1mm 3 and 4×4×1mm 3 , and at the same time use paraffin wax to inlay on the grinding workpiece, grind their surface and splicing side, and use diamond grinding powder with particle size of W40, W20, W10, W5 to grind for 1 hour, so that the grinding surface of two single crystal diamonds is smooth and has a same thickness. Carry out mechanical polishing on the ground surface and side, first use a load of 200 for 5 minutes, then increase the load to 600, polish for 10 minutes, and finally use a load of 400, polish for 10 minutes, the height difference after polishing is 5 μm, and the surface roughness is 0.3nm; use sulfuric acid and nitric acid 5:1 volume ratio to pickle the polished sample for 30 minutes, and then use acetone and absolut...

Embodiment 2

[0045] The method of splicing and growing large-size and high-quality single-crystal diamond by laser grooving has the following steps:

[0046] Two pieces of single crystal diamond with side orientation of (100) are selected, and the size is 8×8×1mm 3 and 8×8×1mm 3 , and at the same time use paraffin wax to inlay on the grinding workpiece, grind their surface and splicing side, and use diamond grinding powder with particle size of W40, W20, W10, W5 to grind for 1 hour, so that the grinding surface of two single crystal diamonds is smooth and has a same thickness. The polished surface and side are mechanically polished, first using a load of 400 for 5 minutes, then increasing the load to 600, polishing for 10 minutes, and finally using a load of 400, polishing for 10 minutes, the height difference after polishing is 8 μm, and the surface roughness is 0.6nm; use sulfuric acid and nitric acid at a volume ratio of 5:1 to pickle the polished sample for 60 minutes, and then use a...

Embodiment 3

[0048] The method of splicing and growing large-size and high-quality single-crystal diamond by laser grooving has the following steps:

[0049] Select two single crystal diamonds with side orientation of (110), the size is 4×4×1mm 3 and 4×4×1mm 3 , and at the same time use paraffin to inlay the grinding workpieces, grind their surfaces and splicing sides, and use diamond grinding powders with particle sizes of W40, W20, W10, and W5 to grind for 2 hours, so that the grinding surfaces of two single crystal diamonds are smooth and have a same thickness. The ground surface and side are mechanically polished, first using a load of 400 for 5 minutes, then increasing the load to 800, polishing for 10 minutes, and finally using a load of 400, polishing for 10 minutes, the height difference after polishing is 9 μm, and the surface roughness is 1nm; use sulfuric acid and nitric acid 5:1 volume ratio to pickle the polished sample for 60min, then use acetone and absolute ethanol to ult...

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Abstract

The invention discloses a method for improving large-size monocrystal diamond joint quality and belongs to the field of monocrystal diamond materials. The method comprises the following steps: simultaneously grinding and polishing two monocrystal diamonds, carrying out groove cutting treatment of different modes on surfaces of the monocrystal diamonds by using a laser etching technique, an electron beam lithography technique, an ICP (inductively coupled plasma) technique or a focused ion beam bombardment method so as to achieve splicing joint groove cutting treatment with a low displacement density and high quality, carrying out splicing growth on the two monocrystal diamonds under a microwave plasma condition, and finally splicing the two monocrystal diamonds in a transverse epitaxial manner, so as to obtain a high-quality large-size monocrystal diamonds without a splicing joint. Due to different micro-groove structures, shielding of microwaves upon plasma can be achieved, then the ratio of a transverse and longitudinal growth velocity can be optimized, furthermore, displacement defects caused by transverse epitaxies can be effectively inhibited, the consequence that a CVD (chemical vapor deposition) growth layer has a polycrystallization phenomenon or a low quality zone of a high displacement density is formed by displacement continuation can be avoided, and improvement of diamond joint quality is achieved.

Description

technical field [0001] The invention belongs to the technical field of single crystal diamond material growth; in particular, it relates to a method for improving the seam quality of large-size single crystal diamond by using the periodic groove technology on the splicing surface. After different forms of groove processing, low dislocation density and high-quality splicing seams can be achieved, and finally large-area diamond splicing growth can be realized. [0002] technical background [0003] As a wide bandgap semiconductor, single crystal diamond has excellent properties in thermal, mechanical, optical, electrical and other aspects. For example, it has high thermal conductivity and remarkable heat dissipation effect at high temperature; diamond is the hardest natural substance and is widely used as coating material for knives and abrasive tools; diamond has high transmittance in the entire band from ultraviolet to infrared; In addition, diamond has a wide band gap (5.5e...

Claims

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Application Information

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IPC IPC(8): C30B29/04C30B25/20
CPCC30B25/186C30B25/205C30B29/04
Inventor 刘金龙朱肖华李成明邵思武郑宇亭赵云魏俊俊陈良贤周建军
Owner UNIV OF SCI & TECH BEIJING
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