Method for preparing Ag2X film

A film and compound technology, applied in the field of Ag2X film preparation, can solve the problems of narrow scope of application and high cost, and achieve the effects of being environmentally friendly, cheap raw materials, and easy to obtain raw materials
CN102080263AInactive Publication Date: 2011-06-01TONGJI UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TONGJI UNIV
Publication Date
2011-06-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention belongs to the technical field of material chemistry, and relates to a method for preparing an Ag2X film, wherein X refers to selenium or tellurium. The method provided by the invention comprises the following steps: firstly, adding silver nitrates and a compound of selenium or tellurium into a beaker filled with a solvent, then adding alkali and a complexing agent into the beaker, and fully stirring so as to completely dissolve the added objects, then adding a reducing agent into the beaker, after the reducing agent is completely dissolved, stopping stirring, and adding a substrate into the beaker for depositing the Ag2X film; then, after the thermostatic reaction is completed, washing the obtained Ag2X film with deionized water and absolute ethyl alcohol; and finally, drying the Ag2X film. The method provided by the invention has the advantages that the reaction condition is mild, an Ag2Se or Ag2Te film can be synthesized at one step in an aqueous solution, and the prepared film is smooth, compact and uniform; the used raw materials are cheap and easy to obtain, the process is simple, the large-scale production is easy to realize, and because of avoiding using a large quantity of organic solvents in the process of reaction, the method is in favor of environmental protection, and has a broad market prospect; and the synthesized silver selenide and silver telluride film can be widely applied to multiple fields of fast ionic conductors, nonlinear optical elements, photoelectric secondary batteries, and the like, therefore, the film has a broad market prospect.
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Description

technical field

[0001] The invention belongs to the technical field of material chemistry and relates to an Ag 2 A preparation method of X thin film, wherein X is selenium or tellurium. Background technique

[0002] Both silver selenide and silver telluride are important semiconductor materials, which undergo phase transitions at 406K and 418K, respectively. Silver selenide and silver telluride in the high temperature phase show fast ion conductor properties; below the phase transition temperature, silver selenide and silver telluride are narrow bandgap semiconductors, with higher carrier mobility and lower thermal conductivity. Conductivity. Both silver selenide and silver telluride exhibit a distance magnetoresistance effect when the composition deviates from the stoichiometric ratio. Silver selenide and silver telluride have broad application prospects in the fields of fast ion conductors, nonlinear optical devices, photoelectric secondary batteries, multifunctional io...

Claims

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