Method for preparing Ag2X film
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TONGJI UNIV
- Publication Date
- 2011-06-01
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of material chemistry and relates to an Ag 2 A preparation method of X thin film, wherein X is selenium or tellurium. Background technique
[0002] Both silver selenide and silver telluride are important semiconductor materials, which undergo phase transitions at 406K and 418K, respectively. Silver selenide and silver telluride in the high temperature phase show fast ion conductor properties; below the phase transition temperature, silver selenide and silver telluride are narrow bandgap semiconductors, with higher carrier mobility and lower thermal conductivity. Conductivity. Both silver selenide and silver telluride exhibit a distance magnetoresistance effect when the composition deviates from the stoichiometric ratio. Silver selenide and silver telluride have broad application prospects in the fields of fast ion conductors, nonlinear optical devices, photoelectric secondary batteries, multifunctional io...