Preparation method of zinc telluride single crystal

A zinc telluride single crystal technology, which is applied in the field of II-VI semiconductor material preparation, can solve problems such as poor quality of zinc telluride single crystals, and achieve the effects of saving economic costs, reducing dosage, and good stoichiometry
CN107201548AActive Publication Date: 2017-09-26NORTHWESTERN POLYTECHNICAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NORTHWESTERN POLYTECHNICAL UNIV
Publication Date
2017-09-26

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Abstract

The invention discloses a preparation method of a zinc telluride single crystal, and aims to solve the technical problem that the zinc telluride single crystal prepared through the existing method is low in quality. The technical scheme is that the preparation method comprises the following steps: putting a high-purity tellurium elementary substance and a synthesized zinc telluride polycrystal raw material into a quartz crucible for fused sealing under high vacuum; then putting the quartz crucible into an ACRT (Accelerated Crucible Rotation Technique) type five-temperature-region crystal growth furnace; firstly, heating the furnace at a certain heating rate, thus obtaining a preset temperature field, preserving the heat for a period of time, and cooling the crucible at a rate of 0.1 to 0.2 mm / h, wherein the temperature gradient for crystal growth is 10 + / - 1 DEG C / cm and the crystallizing temperature is 1,060 + / - 1 DEG C; and under a condition of keeping the temperature field in a growth process unchanged, after the crystal grows, cooling the crucible at 3 DEG C / h for 50 hours, then cooling the crucible at the rate of 5 DEG C / h for 100 hours, and finally turning off a power supply for furnace cooling. According to the preparation method, the ZnTe crystal with an enough length and high crystallizing quality is obtained.
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Description

technical field

[0001] The invention belongs to the field of preparation of II-VI semiconductor materials, in particular to a preparation method of zinc telluride single crystal. Background technique

[0002] ZnTe is a compound semiconductor with II-VI direct bandgap, with a bandgap width of 2.26eV at room temperature, and can be used to prepare yellow and green light-emitting diodes (LEDs) and laser diodes (LDs). ZnTe has good phase matching characteristics and good photoelectric properties, and has great application value as a device for optical rectification to generate and detect THz radiation. Compared with other II-VI compound semiconductor materials, there are relatively few studies on the growth and characterization of ZnTe, and there is a lack of sufficient experimental results to support the in-depth development of crystal preparation and device research. At present, the price of ZnTe crystals is high, and the crystal quality needs to be improved, which seriously ...

Claims

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