Preparation method of zinc telluride single crystal

A zinc telluride single crystal technology, which is applied in the field of II-VI semiconductor material preparation, can solve problems such as poor quality of zinc telluride single crystals, and achieve the effects of saving economic costs, reducing dosage, and good stoichiometry

Active Publication Date: 2017-09-26
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the shortcomings of the poor quality of zinc telluride single crystals prepared by existing methods, the present invention provides a method for preparing zinc telluride single crystals

Method used

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  • Preparation method of zinc telluride single crystal
  • Preparation method of zinc telluride single crystal
  • Preparation method of zinc telluride single crystal

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Step 1. Clean the oil stains on the two quartz crucibles, and soak the quartz crucibles in analytical pure acetone for 24 hours; soak the quartz crucibles in a solution with a volume ratio of concentrated hydrochloric acid and concentrated nitric acid for 24 hours; soak the quartz crucibles in After immersing in 10% hydrofluoric acid solution for 30 minutes, take out the quartz crucible, wash it with deionized water, and dry it at 100°C.

[0023] Step 2: Put zinc and tellurium elemental raw materials with a purity of 99.9999% into the treated first quartz crucible at a molar ratio of 1:1. -5 At Pa, a polycrystalline material is synthesized.

[0024] Step 3: putting the cleaned second quartz crucible into a tube furnace, and attaching a layer of graphitic carbon film to the inner wall of the quartz crucible by thermally decomposing acetone.

[0025] Step 4. Put the materials into the second quartz crucible in the order of tellurium element and zinc telluride polycrystal...

Embodiment 2

[0031] Step 1. Clean the oil stains on the two quartz crucibles, and soak the quartz crucibles in analytical pure acetone for 24 hours; soak the quartz crucibles in a solution with a volume ratio of concentrated hydrochloric acid and concentrated nitric acid for 24 hours; soak the quartz crucibles in After immersing in 10% hydrofluoric acid solution for 30 minutes, take out the quartz crucible, wash it with deionized water, and dry it at 100°C.

[0032] Step 2: Put zinc and tellurium elemental raw materials with a purity of 99.9999% into the treated first quartz crucible at a molar ratio of 1:1. -5 Melt seal at Pa to synthesize polycrystalline material.

[0033] Step 3: putting the cleaned second quartz crucible into a tube furnace, and attaching a layer of graphitic carbon film to the inner wall of the quartz crucible by thermally decomposing acetone.

[0034] Step 4. Put the materials into the second quartz crucible in the order of tellurium element and zinc telluride polycry...

Embodiment 3

[0040] Step 1. Clean the oil stains on the two quartz crucibles, and soak the quartz crucibles in analytical pure acetone for 24 hours; soak the quartz crucibles in a solution with a volume ratio of concentrated hydrochloric acid and concentrated nitric acid for 24 hours; soak the quartz crucibles in After immersing in 10% hydrofluoric acid solution for 30 minutes, take out the quartz crucible, wash it with deionized water, and dry it at 100°C.

[0041] Step 2: Put zinc and tellurium elemental raw materials with a purity of 99.9999% into the treated first quartz crucible at a molar ratio of 1:1. -5 Melt seal at Pa to synthesize polycrystalline material.

[0042] Step 3: putting the cleaned second quartz crucible into a tube furnace, and attaching a layer of graphitic carbon film to the inner wall of the quartz crucible by thermally decomposing acetone.

[0043] Step 4. Put the materials into the second quartz crucible in the order of tellurium element and zinc telluride polyc...

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Abstract

The invention discloses a preparation method of a zinc telluride single crystal, and aims to solve the technical problem that the zinc telluride single crystal prepared through the existing method is low in quality. The technical scheme is that the preparation method comprises the following steps: putting a high-purity tellurium elementary substance and a synthesized zinc telluride polycrystal raw material into a quartz crucible for fused sealing under high vacuum; then putting the quartz crucible into an ACRT (Accelerated Crucible Rotation Technique) type five-temperature-region crystal growth furnace; firstly, heating the furnace at a certain heating rate, thus obtaining a preset temperature field, preserving the heat for a period of time, and cooling the crucible at a rate of 0.1 to 0.2 mm/h, wherein the temperature gradient for crystal growth is 10 +/- 1 DEG C/cm and the crystallizing temperature is 1,060 +/- 1 DEG C; and under a condition of keeping the temperature field in a growth process unchanged, after the crystal grows, cooling the crucible at 3 DEG C/h for 50 hours, then cooling the crucible at the rate of 5 DEG C/h for 100 hours, and finally turning off a power supply for furnace cooling. According to the preparation method, the ZnTe crystal with an enough length and high crystallizing quality is obtained.

Description

technical field [0001] The invention belongs to the field of preparation of II-VI semiconductor materials, in particular to a preparation method of zinc telluride single crystal. Background technique [0002] ZnTe is a compound semiconductor with II-VI direct bandgap, with a bandgap width of 2.26eV at room temperature, and can be used to prepare yellow and green light-emitting diodes (LEDs) and laser diodes (LDs). ZnTe has good phase matching characteristics and good photoelectric properties, and has great application value as a device for optical rectification to generate and detect THz radiation. Compared with other II-VI compound semiconductor materials, there are relatively few studies on the growth and characterization of ZnTe, and there is a lack of sufficient experimental results to support the in-depth development of crystal preparation and device research. At present, the price of ZnTe crystals is high, and the crystal quality needs to be improved, which seriously ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B11/00
CPCC30B11/00C30B11/006C30B29/48
Inventor 刘长友汤庆凯姬磊磊肖宝雷浩谢鹏飞介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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