Growing technique of ZnTe monocrystal

A crystal growth, single crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of difficult control of crystal growth direction, unsuitable for industrial production, poor repeatability, etc., to reduce crystal cost, convenient operation, The effect of simple structure

Inactive Publication Date: 2009-10-07
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to invent a new technology for the growth of ZnTe single crystal by the bottom seed crystal method in order to overcome the shortcomings of the existing growth technology, such as difficult control of the crystal growth direction, poor repeatability, low yield, and unsuitability for industrial production, in order to realize ZnTe Low-cost, batch, and automated production of crystals

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] (1), preparation of raw materials: prepare 4kg of high-purity Zn and Te mixture in a molar ratio of 4:6, and heat it to about 1200°C under airtight conditions to synthesize tellurium-rich ZnTe polycrystalline material;

[0016] (2), crystal growth: the ZnTe crystal obtained in step (1) is accurately oriented by an X-ray orientation instrument, cut and ground into a ZnTe seed crystal with a diameter of 10 mm and a seed crystal orientation of , and cleaned with deionized water After cleaning and drying, put it into the seed well position of the PBN crucible, put 4.0kg of tellurium-rich high-purity ZnTe polycrystalline raw material into a 2-inch diameter PBN crucible, vacuum seal it in the quartz crucible, and then place it in three temperature zones In the high temperature zone (T1) of the descending furnace, the furnace temperature is controlled at 1250°C. After the temperature is constant, the position of the crucible is raised to make the top of the seed crystal be slig...

Embodiment 2

[0019] (1) Raw material preparation: Prepare 16 kg of high-purity Zn and Te mixture in a molar ratio of 3:7, and heat it to about 1100° C. under airtight conditions to synthesize tellurium-rich ZnTe polycrystalline material;

[0020] (2), crystal growth: the ZnTe crystal obtained in step (1) is precisely oriented by an X-ray orientation instrument, cut and ground into a ZnTe seed crystal with a diameter of 10 mm and a seed crystal orientation of , and cleaned with deionized water After cleaning and drying, put it into the seed well position of the PBN crucible, put 16 kg of tellurium-rich high-purity ZnTe polycrystalline raw material into 4 PBN crucibles with a diameter of 3 inches, vacuum seal in the quartz crucible, and then place it in a three-temperature In the high-temperature zone (T1) of the zone descending furnace, the furnace temperature is controlled at 1180°C. After the temperature is constant, the position of the crucible is raised, so that the top of the seed cryst...

Embodiment 3

[0023] (1), raw material preparation: prepare 4kg of high-purity Zn and Te mixture according to molar ratio 2: 8, add the ZnP of 60mg 2 , heated to about 1000°C under airtight conditions to synthesize tellurium-rich and phosphorus-doped ZnTe polycrystalline materials;

[0024] (2), crystal growth: the phosphorus-doped ZnTe crystal obtained in the step (1) is accurately oriented by an X-ray orientation instrument, cut and ground into a ZnTe seed crystal with a diameter of 10 mm and a seed crystal orientation of , using After cleaning and drying the ionized water, put it into the seed well position of the PBN crucible, then put 4.0 kg of phosphorus-doped ZnTe polycrystalline raw material into a PBN crucible with a diameter of 2 inches, vacuum seal it in the quartz crucible, and then place it in a three-dimensional In the high temperature zone (T1) of the temperature zone falling furnace, the furnace temperature is controlled at 1000°C. After the temperature is constant, the posi...

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Abstract

This invention relates to a bottom seed crystal growing technique of ZnTe monocrystal, comprising displacing the synthesized high-purity high-tellurium polycrystal ZnTe material into a PBN crucible with whose bottom being arranged with ZnTe seed crystal, sealing it in a quartz crucible and displacing it into a descending furnace of three-temperature region for crystal growth; controlling the furnace temperature and growing speed respectively at 1000-1250 degrees centigrade and 0.5-1 / h, wherein multiple equivalent crucible positions are arranged inside the descending furnace for the growth of multiple crystals at the same time; after the crystal growth, regulating position of crucible and controlling the furnace temperature for in-situ annealing to the crystal to obtain ZnTe monocrystal. The bottom seed crystal growing technique of ZnTe monocrystal in this invention comprises advantages of simply structured growing furnace, convenient operation, adjustable gradient temperature inside the hearth; besides, the in-situ annealing process contributes to reducing crystal disadvantage caused by heat stress. Since multiple equivalent stations are arranged inside the furnace, multiple crystals grow at the same time, thus reducing the crystal cost and being especially suitable for scale production.

Description

technical field [0001] The invention relates to a bottom seed crystal growth technology of zinc telluride single crystal, which belongs to the field of crystal growth. Background technique [0002] Zinc telluride (ZnTe) is a very potential green LED semiconductor material. ZnTe is a direct migration semiconductor, while GaP is an indirect migration semiconductor, so electrons and positive holes in ZnTe are more easily combined to improve luminous efficiency. Compared with the current commercialized GaP-based green LEDs, the material cost and manufacturing cost of ZnTe-based green LEDs are lower, and the material cost of manufacturing one LED device is only about 1 / 4 of that of GaP-based LEDs. In addition, ZnTe can also be applied to THz devices and electro-optic sensors, and the electro-optic coefficient of ZnTe is higher than that of most other compound semiconductors. In recent years, ZnTe materials and related industries have developed rapidly, and the scale of the indu...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/48
Inventor 徐家跃金敏赵洪阳胡同兵何庆波房永征
Owner SHANGHAI INST OF TECH
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