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Production process of zinc telluride-doping cuprous telluride target material

A cuprous telluride and production process technology, which is applied in the production field of zinc telluride-doped cuprous telluride targets, can solve the problems of high cost and achieve high density, high film forming efficiency and good performance

Pending Publication Date: 2019-05-03
江西科泰新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are also patents for the preparation of zinc telluride single-component targets, which mainly use hot isostatic pressing (HIP) to prepare zinc telluride targets. The prepared targets have excellent performance, but the cost is relatively high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] This example provides a production process of zinc telluride-doped cuprous telluride (ZnTe(99.5)Cu2Te(0.5)at%) target, including the following steps:

[0016] (1) Ingredients and tube sealing

[0017] Break the Zn, Cu, and Te elements with a purity of more than 99.995% into uniform small pieces or powders, and calculate three kinds of The amount of simple substance, after accurate weighing, put the three simple substances into the quartz tube, and vacuum the quartz tube to 10 -2 Hold, seal the tube with an oxyhydrogen flame and wait for burning.

[0018] (2) Synthesis of dense tubes in a single temperature zone

[0019] Put the dense tube filled with raw materials into the single-temperature zone liquid-phase synthesis furnace, and set the synthesis time-temperature curve parameters at 400~1000 0 The corresponding temperature points in the C range are kept warm for 1 hour each, at 1000~1200 0 Temperature points in the C range were kept warm for 2 hours. After the s...

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Abstract

The invention discloses a production process of a zinc telluride-doping cuprous telluride target material, and particularly provides a production method of a zinc telluride-doping cuprous telluride material and a production method of the target material made therefrom. The particularly include: crushing simple substances of Zn, Te and Cu into uniform chips or powders, accurately weighing the raw materials, and uniformly placing the three simple substances into a quartz tube according to theoretical amount; vacuumizing the tube, and performing sealed in-tube synthesis; and ball-milling a synthesized ZnTe(99+x)Cu2Te(1-x) at% material to obtain dried ZnTe(99+x)Cu2Te(1-x) at% powder; performing hot pressed sintering with the powder being a raw material to obtain a ZnTe(99+x)Cu2Te(1-x) at% target green body; and performing mechanical processing on the target green body to prepare the target material. By means of the sealed in-tube synthesis, the ZnTe(99+x)Cu2Te(1-x) at%, which is less in impurity phase and is uniform in component, is synthesized according to a time-temperature program researched by the company, purity of the synthetic product being higher than 99.995%. The zinc telluride-doping cuprous telluride target material, produced by the original hot pressed sintering process of our company, is high in relative density, is uniform in components and crystalline grain, is smallin size of the crystalline grain and has great film-forming property.

Description

technical field [0001] The invention relates to the technical field of production of zinc telluride-doped cuprous telluride target materials, and relates to a production technology of zinc telluride-doped cuprous telluride target materials. Background technique [0002] CdTe solar cell is a fast-growing thin-film solar cell. Because it is difficult for the CdTe light-absorbing layer to form a stable low-ohmic contact with the electrode material, a transition layer, that is, the back contact layer, needs to be inserted between the electrode and the light-absorbing layer. ZnTe-doped copper is an ideal material for the back contact layer of CdTe solar cells, which can form a good ohmic contact with both the absorber layer and the electrode. The ZnTe / ZnTe: Cu composite back contact layer prepared by using ZnTe-doped copper and ZnTe can improve the CdTe thin film solar energy. battery performance. [0003] A ZnTe:Cu thin film of one of the ZnTe / ZnTe:Cu back contact layers can be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/515C04B35/622
Inventor 吴文斌舒小敏
Owner 江西科泰新材料有限公司
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