Preparation method of zinc telluride

A zinc telluride and inert gas technology, which is applied in the field of synthetic material preparation, can solve the problems of very high requirements for zinc telluride, long consumption time of dry process, difficulty in guaranteeing the quality of wet process products, etc., and achieve good economic benefits and short time , the effect of less equipment

Inactive Publication Date: 2014-07-30
FIRST RARE MATERIALS CO LTD
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the dry method consumes a long time, and the product quality of the wet method is difficult to guarantee. In addition, in the process of preparing zinc telluride, if it encounters dilute acid, it will react to release highly toxic hydrogen telluride (H2Te), which shows that it is harmful to the preparation of zinc telluride. Zinc telluride is very demanding

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0021] The invention provides a preparation method of zinc telluride. The whole preparation process uses a high-pressure synthesis method, which has short time, less required equipment and low excess coefficient, reduces production cost to a certain extent, and improves production efficiency.

[0022] Zinc is a light gray, silver-white transition metal, chemically active, difficult to burn in air. Tellurium is a kind of orthorhombic silver-white crystalline substance. Generally speaking, it can be used as an additive in semiconductor devices, alloys, chemical raw materials, cast iron, rubber, glass and other industries. Zinc telluride (ZnTe) composed of the two, It is a semiconductor and infrared material with properties such as light guide and fluorescence.

[0023] A kind of preparation method of zinc telluride provided by the invention comprises steps:

[0024] Step A, put the mixed material of tellurium and zinc into the graphite crucible, then pass in an inert gas to exh...

Embodiment 1

[0052] According to the molar ratio of 1:1.01 5N tellurium block: 5N zinc ingot ingredients are mixed into 6000g of mixed material,

[0053] Put the mixed material into a clean high-purity graphite crucible, blow nitrogen gas to exhaust the oxygen in the crucible, cover the crucible lid, put the graphite crucible into the high-pressure furnace and close the furnace.

[0054] Turn on the vacuum pump to evacuate the pressure in the high-pressure furnace to -0.1Pa, then fill in nitrogen, repeat this three times, try to remove the oxygen in the high-pressure furnace, and finally fill in nitrogen to raise the pressure in the high-pressure furnace to 1.0MPa. Then heat up to 1400°C, hold the heat for 3 hours and then cool down. When the temperature drops to 50°C, exhaust and release pressure, start the furnace to take materials, and obtain 5994g of zinc telluride product.

[0055] The detected zinc telluride has a tellurium content of 66.12%, a total impurity content of less than 10p...

Embodiment 2

[0057] The molar ratio of tellurium block to zinc ingot was controlled to be 1:1.03, other conditions were the same as in Example 1, and 5998g of zinc telluride product was obtained after the reaction.

[0058] The detected zinc telluride has a tellurium content of 66.15%, a total impurity content of less than 10ppm, and a product yield of 99.92%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of zinc telluride. The preparation method comprises the following steps: introducing an inert gas to exhaust oxygen gas after adding a material mixture of tellurium and zinc into a graphite crucible, and sealing the crucible; placing the crucible in a sealed heat-resistant container, and introducing the inert gas after exhausting the oxygen gas in the sealed heat-resistant container; regulating pressure in the heat-resistant container to 0.6-3.0 MPa, rising a temperature to 1000-1500 DEG C, and cooling after preserving the heat for 1-4 hours; exhausting gas and releasing pressure after cooling the temperature lower than 60 DEG C, taking out the material mixture to obtain the zinc telluride. According to the preparation method disclosed by the invention, in an inert atmosphere, the zinc telluride is synthesized by virtue of reaction of tellurium and zinc under a certain pressure; the preparation method is short in process time, less in needed equipment and low in excess coefficient, can be used for improving the product purity of the zinc telluride, lowering the production cost to a certain extent, and improving the production efficiency.

Description

technical field [0001] The invention relates to a preparation method of a synthetic material, in particular to a preparation method of zinc telluride. Background technique [0002] Zinc telluride is a compound of zinc and tellurium with the chemical formula ZnTe. Zinc telluride is mainly used in semiconductors and infrared materials. It can be used as fluorescent materials and phosphorescent materials. It can also be used to make light-emitting diodes, infrared detection, and radiation detection materials. Zinc telluride is permeable to light with a wavelength of 0.65 μm, and has a refractive index of 2.7 for light with a wavelength of 1 to 8 μm. [0003] In the prior art, there are two methods for preparing zinc telluride, including dry method and wet method. Among them, the dry method is to heat tellurium and zinc to 1000-1200°C in a closed atmosphere to react to synthesize zinc telluride; the wet method is to react sodium telluride and zinc acetate in aqueous solution t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
Inventor 朱刘王波谢群
Owner FIRST RARE MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap