Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photovoltaically active semiconductor material and photovoltaic cell

A semiconductor and photovoltaic technology, applied in semiconductor devices, photovoltaic power generation, polycrystalline material growth, etc., can solve problems such as difficult to achieve, incomplete description, etc., to achieve high efficiency

Inactive Publication Date: 2009-01-21
BASF AG
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In fact, the description given is incomplete, making it difficult, if not impossible, to achieve the goal of a more efficient photovoltaic cell with an intermediate band

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photovoltaically active semiconductor material and photovoltaic cell

Examples

Experimental program
Comparison scheme
Effect test

example

[0079] Execute these examples where the components are Zn 0.99 co 0.01 Te.

[0080] To this end, each element with a purity exceeding 99.99% was weighed into a fused silica tube, residual moisture was removed by heating under reduced pressure, and the tube was flame sealed under reduced pressure.

[0081] In an inclined tube furnace, the tube was heated from room temperature to 1200°C over a period of 60 hours and held at a temperature of 1200°C for 10 hours. The furnace was then turned off and allowed to cool.

[0082] After cooling, the quartz tube was opened under argon and the resulting telluride was ground in an agate mortar to pieces of approximately 1 mm to 5 mm.

[0083] Finally, the ground material is put into a grinding jar of a planetary ball mill. The powder body was infused through n-octane, followed by the addition of grinding balls of 20 mm diameter stabilized zirconia. The volume portion of the grinding balls was about 60%. The grinding jar was closed und...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a photovoltaically active semiconductor material and a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material contains a crystal lattice composed of zinc telluride and, in the zinc telluride crystal lattice, ZnTe is substituted by - 0.01 to 10 mol% CoTe, - 0 to 10 mol% Cu2Te, Cu3Te or CuTe and - 0 to 30 mol% of at least one compound selected from the group MgTe and MnTe, and wherein, in the zinc telluride crystal lattice Te is substituted by - 0.1 to 30 mol% oxygen. The photovoltaic cell furthermore has a rear contact composed of a rear contact material that forms a metal telluride with tellurium.

Description

technical field [0001] The present invention relates to photovoltaic cells and photovoltaically active semiconductor materials contained therein. Background technique [0002] Photoactive active materials are semiconductors that convert light into electrical energy. The basic principles of this conversion have been known for a long time and are used industrially. Solar cells for industrial applications are mostly based on crystalline silicon (monocrystalline or polycrystalline). In the boundary layer between p- and n-conducting silicon, incident photons excite electrons of the semiconductor such that the electrons are lifted from the forbidden band into the conduction band. [0003] The height of the energy gap between the valence and conduction bands limits the maximum possible efficiency of solar cells. In the case of silicon, the efficiency is about 30% for sunlight. On the other hand, since part of the carriers are recombined through various processes, the practicall...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296
CPCH01L31/02966Y02E10/50H01L31/1832C30B29/48H01L31/0296
Inventor H-J·施特策尔
Owner BASF AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com