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Method for preparing 6-inch P-type solar silicon single crystals through Czochralski method and zone melting method

A technology of Czochralski zone melting and silicon single crystal, which is applied in the fields of self-zone melting method, single crystal growth, chemical instruments and methods, etc., can solve the problem of not being able to produce low-cost P-type solar silicon single crystals and so on.

Inactive Publication Date: 2012-01-04
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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Problems solved by technology

[0005] When the above two methods are used alone, they cannot meet the requirements of P-type solar silicon single crystal with low production cost and special resistivity requirements. The growth process has become a subject of research by technicians in this industry

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  • Method for preparing 6-inch P-type solar silicon single crystals through Czochralski method and zone melting method
  • Method for preparing 6-inch P-type solar silicon single crystals through Czochralski method and zone melting method

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Embodiment Construction

[0024] In order to understand the present invention more clearly, the present invention is described in detail in conjunction with the accompanying drawings and embodiments:.

[0025] Such as figure 1 The process flow chart shown is a method for preparing a 6-inch P-type solar silicon single crystal by the Czochralski zone melting method, including cleaning the Czochralski furnace, charging, vacuuming, filling with argon, heating the chemical material, and introducing crystallization, thin neck, shoulder release, shoulder closing, equal diameter, finishing, lifting and cooling, and out of the furnace; then ingot shape processing, cleaning and corrosion, after meeting the material standards for zone melting, continue to draw gas-mixed sheets by zone melting Crystal, including dismantling the furnace, evacuating, inflating, preheating, setting the amount of doping gas, chemical material, seeding, starting doping gas, drawing thin neck, expanding shoulder, turning shoulder, maint...

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Abstract

The invention relates to a method for preparing 6-inch P-type solar silicon single crystals through a Czochralski method and a zone melting method. The method comprises the following steps: adopting the Czochralski method to clean a Czochralski hearth, charge, vacuumize, inject argon, heat and melt materials, perform seeding, pull narrow necks, grow shoulders, obtain the shoulders, obtain crystals with equal diameter, end, lift and cool and discharge; and then processing the ingot shape, cleaning and corroding to meet the standard of the zone melting material, and then adopting the zone melting method to continue to pull gas-doped single crystals. The gas-doped single crystal zone melting method is combined with the single crystal Czochralski production method; and by controlling vacuumizing and aerating, the concentration of the doping gas and the Czochralski method technological parameter range, the process method can meet the requirement for producing the 6-inch P-type solar silicon single crystals.

Description

technical field [0001] The invention relates to a silicon single crystal preparation process, in particular to a method for preparing a 6-inch P-type solar silicon single crystal by a Czochralski zone melting method. Background technique [0002] At present, the main functional materials used for silicon solar cells are mainly silicon solar cells of different levels (photoelectric conversion efficiency) from materials such as zone-melted monocrystalline silicon, Czochralski monocrystalline silicon, Czochralski polycrystalline silicon, cast polycrystalline silicon, and CVD amorphous silicon. Production. In the future, the development and product composition of global silicon solar cells will tend to consider both cost and efficiency factors, and developed countries will further develop towards zone-melted silicon single crystal materials with higher conversion efficiency. Since the silicon single crystal produced by the traditional preparation method generally has the disadv...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B13/12
Inventor 李立伟王彦君王岩张雪囡高树良沈浩平
Owner TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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