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170 results about "Narrow neck" patented technology

Narrow Neck is a suburb of Auckland, New Zealand.. Until the mid-19th century, Devonport was connected with the rest of the North Shore by a causeway between Ngataringa Bay and the Hauraki Gulf.This causeway gave the appearance of a "narrow neck".

Adjustable dumbbell

InactiveUS7731641B1Easily and adjustably attachedEasily and adjustably to and disengagedDumb-bellsDumbbellMechanical engineering
An adjustable dumbbell includes a handle having a narrowed neck segment formed on each end portion and having a base plate attached to each end portion, two or more weight members each having a slot for receiving the narrowed neck segment of the handle, and each having an enlarged opening communicating with the slot for receiving the handle and for retaining the weight members to the handle when the weight members are offset from the narrowed neck segment of the handle, and a lock nut is engaged with the handle for quickly retaining the weight members to the handle after the weight members have been disengaged from the narrowed neck segment of the handle.
Owner:CHEN PAUL

Method for preparing vacuum zone melting high resistant silicon single crystal

The invention discloses a method for preparing vacuum zone melting high resistant silicon single crystal, comprising the two sequential major processes: polysilicon purification and crystal forming of silicon single crystal, wherein, the process of polysilicon purification comprises the steps of cleaning fire, charging, evacuating, preheating, melting materials heat sealing, growing narrow necks, shouldering, shoulder circuiting, equating diameter, ending and repeating; the process of crystal forming of silicon single crystal comprises the steps of cleaning fire, charging, evacuating, preheating, processing of chemicals, crystal seeding, shouldering, shoulder circuiting, equating diameter, ending and blowing out. With the method of the invention adopted to prepare silicon single crystal, electric resistivity, ultra-high purity, resistivity profile, uniformity of cross-section electric resistivity and minority carrier lifetime are greatly improved; purity of the silicon single crystal is above 11N, electric resistivity reaches 8000 omega/cm-30000omega/cm, uniformity of cross-section electric resistivity is less than 15%, and minority carrier lifetime is more than 600-1000Mus, thus greatly improving performance, stability and safety of the devices while realizing mass production of vacuum zone melting high resistant silicon single crystal.
Owner:峨嵋半导体材料研究所

Method for preparing 6-inch P-type solar silicon single crystals through Czochralski method and zone melting method

InactiveCN102304757AMeet the requirements for the production of 6-inch P-type solar silicon single crystalBy zone-melting liquidsBy pulling from meltCzochralski methodZone melting
The invention relates to a method for preparing 6-inch P-type solar silicon single crystals through a Czochralski method and a zone melting method. The method comprises the following steps: adopting the Czochralski method to clean a Czochralski hearth, charge, vacuumize, inject argon, heat and melt materials, perform seeding, pull narrow necks, grow shoulders, obtain the shoulders, obtain crystals with equal diameter, end, lift and cool and discharge; and then processing the ingot shape, cleaning and corroding to meet the standard of the zone melting material, and then adopting the zone melting method to continue to pull gas-doped single crystals. The gas-doped single crystal zone melting method is combined with the single crystal Czochralski production method; and by controlling vacuumizing and aerating, the concentration of the doping gas and the Czochralski method technological parameter range, the process method can meet the requirement for producing the 6-inch P-type solar silicon single crystals.
Owner:TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD

Housing for a thin active probe

A housing for a thin active probe has two identical molded housing-halves that when assembled form a cavity that encloses the chassis upon which is carried the active circuitry of the probe. The parts exhibit complementary self-symmetry about a longitudinal axis, such that when one is rotated about that axis it performs the mating functions needed to interlock with another part representing its un-rotated self. Interlocking is accomplished by circular tabs and sockets that interfere and prevent the parts from separating once the tabs are in the sockets. The circular tabs are joined to the balance of the housing-half that carries them by a narrow neck and can be sprung over the other housing-half to return to their natural position and fit into a circular socket in that other housing-half. A tapered edge or ramp portion on the underside of each circular tab allows it to automatically spring out of the way as the two parts are moved toward each other in a direction generally perpendicular to the longitudinal axis of the parts. Each circular socket contains a stop that prevent its tab from completely passing through the socket. Each housing-half has a straight tab between its circular tabs that enter an interior recess on the other housing-half to support its circular sockets as they receive their tabs. Each housing-half contains in a front surface an entire aperture for a detachable probe lead, and each contains in a rear surface at least one half-aperture that, when the two housing-halves are joined, forms a larger aperture whose perimeter engages a corresponding groove in a strain relief for a cable. The exterior surface of the mated housing-halves has, on each side through which runs the line of the mating edges, a flat shallow recess. The interlocking circular tabs and sockets are located within the extent of this shallow recess, which can receive an adhesive label that may conceal and stiffen the interlocking circular tabs and sockets.
Owner:AGILENT TECH INC
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