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Process for preparing zone-melted vapor doping solar cell silicon single crystal

A solar cell, gas-phase doping technology, applied in the directions of single crystal growth, single crystal growth, self-regional melting method, etc., can solve the problems of silicon single crystal radial and axial resistivity inhomogeneity, etc.

Active Publication Date: 2006-11-22
ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD +1
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Problems solved by technology

In the process of many experiments, especially the size of the inflation pressure, the ratio of nitrogen incorporation, and the different changes in the diameter of the single crystal at each stage during the crystal pulling process have always been the key issues for the successful preparation of single crystals. The problem of excessively high radial and axial resistivity inhomogeneity of silicon single crystal and the problem of high-voltage ionization exist and must be solved

Method used

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  • Process for preparing zone-melted vapor doping solar cell silicon single crystal

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Embodiment Construction

[0017] refer to figure 1 , the process flow of zone melting vapor phase doping silicon single crystal for solar cells is:

[0018] Furnace cleaning, furnace loading→evacuation, gas filling, preheating→chemical material, seeding→setting the doping gas setting value→slimming the neck→opening the doping gas→expanding the shoulder, filling nitrogen gas→turning the shoulder, maintaining→finishing, Stop the furnace and stop the doping gas.

[0019] Described doping gas uses phosphine (PH 3 ), borane (B 2 h 6 ), phosphine (PH 3 ) and argon (Ar) mixed gas, borane (B 2 h 6 ) mixed with argon (Ar) any one of the four doping gases; among the four doping gases, phosphine (PH 3 ) or borane (B 2 h 6 ) accounts for a concentration ratio of 0.0001%-100%.

[0020] In the process of evacuating, inflating, and preheating, argon gas is rapidly charged into the furnace; when the inflation pressure reaches a relative pressure of 1 bar-6 bar, the rapid inflation is stopped and slow inflati...

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Abstract

The invention discloses a manufacturing method of gas-phase pre-blending zone melting process monocrystalline silicon to produce solar battery, which comprises the following steps: shoving; exhausting; filling argon gas; doping; mitering; utilizing zone melting process monocrystalline silicon furnace electric control system to do the following operation in the metering growing procedure: setting positive, inversed movement for touching screen and coil heating moving order; moving positively for 1-90 s and moving inversely; repeating the movement to coincidence with the coil center and lower shaft or eccentric 1-50 mm; setting value for blending gas; dragging thin neck; opening to blend gas; expanding shoulder; charging nitrogen gas; transmitting shoulder; keeping; ending; stopping furnace; stopping blending gas. The invention solves high-pressure ionizing problem, which improves the stability and reliability for monocrystalline silicon to prepare high-effective solar battery.

Description

technical field [0001] The invention relates to a method for producing silicon single crystals, in particular to a method for producing silicon single crystals of zone-melting gas-phase doped solar cells for producing solar cells. technical background [0002] At present, the main functional materials used for silicon solar cells are mainly made of zone-melted monocrystalline silicon, Czochralski monocrystalline silicon, Czochralski polycrystalline silicon, cast polycrystalline silicon, CVD amorphous silicon and other materials for different levels (photoelectric conversion efficiency) of silicon solar energy. Battery production. In the future, the development and product composition of global silicon solar cells will comprehensively consider both cost and efficiency factors, and developed countries will further develop towards zone-melted silicon single crystal materials with higher conversion efficiency. Since the silicon single crystal produced by the traditional prepara...

Claims

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Application Information

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IPC IPC(8): C30B13/10C30B29/06
Inventor 沈浩平高树良刘为钢王聚安昝兴立高福林张焕新宁燕赵宏波李颖辉牛建军
Owner ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD
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