Bismuth telluride based N type thermoelectric material and preparation method thereof

A thermoelectric material, bismuth telluride technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the development limitation of nano-Bi2Te3-based thermoelectric materials, difficult to form large-scale industrial applications, nanostructures It is easy to be damaged and other problems, and achieves the effect of outstanding thermoelectric performance, improved Seebeck coefficient and high density.

Active Publication Date: 2017-04-19
SUZHOU UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the development of nano-Bi2Te3-based thermoelectric materials is greatly restricted due to the shortcomings of nanostructures that are easily damaged during thermal cycling and are not easily

Method used

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  • Bismuth telluride based N type thermoelectric material and preparation method thereof
  • Bismuth telluride based N type thermoelectric material and preparation method thereof
  • Bismuth telluride based N type thermoelectric material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The optional elemental raw materials can be selected according to Bi 2 (Te 0.92 Se 0.08 ) 3 , chemical formula content weighing, where Te is 500 grams, the Bi content can be increased by 0.4% by weight on the basis of the normal stoichiometric ratio; metal antimony (Sb) and the weight percentage of 0.02% by weight are added on the basis of the stated weight 0.03% non-metallic iodine (I), the purity of all elemental raw materials is above 4N;

[0022] Put the above-mentioned weighed materials into the sintered flat quartz tube at the bottom, vacuumize and seal the tube, then put it into a resistance-heated swing furnace, place the quartz tube vertically, and react at 800 °C for 12 hours. Swing the furnace body, ① the swing frequency is controlled at 0.04Hz, and the swing time is determined by the fluctuation of the furnace field temperature from the beginning of swing until the temperature indication value is constant; ② the interval between two adjacent swings is 50 ...

Embodiment 2

[0024] Cut and polished samples (Bi 1-x Sb x ) 2 Te 3 Conduct thermoelectric performance tests. Prepared by the above method (Bi 1-x Sb x ) 2 Te 3 Block samples were cut with a wire cutter and sanded. The sample is first cut into basic discs and cuboid samples with a cutting machine, and then polished with sandpaper; the thickness of the disc sample is 2.0mm, and the diameter is 12.0mm. The cross-sectional area of ​​the cuboid is 2.5 × 2.5 mm 2 , The thermal diffusivity of the wafer was tested on a NETZSCH LFA467 laser thermal conductivity meter, using pyrocream9606 as a standard sample, and tested under an argon atmosphere. The conductivity and Seebeck coefficient of the samples were tested on ULVAC ZEM-3.

Embodiment 3

[0026] Sample (Bi 1-x Sb x ) 2 Te 3 The thermoelectric performance test results of

[0027] The above test results show that the resistivity increases with the increase of temperature, from 10.1*10 at room temperature -6 Ω m increased to 2.7*10 at 480K -5Ωm. The absolute value of the Seebeck coefficient first increases with the increase of temperature, reaches a maximum of 247μV / K at 320K, and then decreases. A positive Seebeck coefficient indicates that (Bi 1-x Sb x ) 2 Te 3 Most of the carriers are holes. The thermal conductivity becomes smaller as the temperature increases, and the thermal conductivity near room temperature is 1.3W / m.K. According to the figure of merit calculation formula of thermoelectric materials: Z=S 2 σ / K, where S is the Seebeck coefficient of the material, σ is the electrical conductivity, and K is the thermal conductivity, it can be obtained that (Bi 1-x Sb x ) 2 Te 3 The ZT value of the sample was 1.33 at 340K.

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Abstract

The invention discloses a preparation method of a bismuth telluride based N type thermoelectric material Bi2(Te<1-x>Se<x>)3. A melt mixing step and a zone melting step are used for synthesis. The synthesis method comprises that single-substance raw materials can be selected and weighed according to a chemical formula Bi2(Te<1-x>Se<x>)3 in which x is greater than or equivalent to 0.02 and lower than or equivalent to 0.1, metal antimony (Sb) in the weight percentage of 0.01% to 0.03% and nonmetal iodine (I) in the weight percentage of 0.03% to 0.06% are added on the basis of the weight obtained by weighing, and the purities of all the single-substance raw materials are greater than 4N; the materials are filled into a quartz tube whose bottom is relatively flat by sintering to implement vacuum-pumped tube sealing, and then filled into a rocking furnace of resistance heating, and the quartz tube is placed in a vertical position and then sintered by melt mixing synthesis. The quartz tube is cooled naturally to the room temperature after sintering, and then removed and placed in a melting furnace in a vertical zone for pulse zone melting. The bismuth telluride based N type thermoelectric material and the preparation method thereof have the advantages that the preparation method is simple, a high-density body material of a monocrystalline similar structure and including a few of inlaid nanometer crystal grains can be obtained, via measurement, the ZT value of the thermoelectric material Bi2(Te<1-x>Se<x>)3 can reach 1.33 during 340K, and the material can be applied to fields including waste heat recovery and space exploration.

Description

technical field [0001] The invention relates to a bismuth telluride-based thermoelectric material Bi 2 (Te 1-x Se x ) 3 The invention and a preparation method thereof belong to the field of inorganic materials. Background technique [0002] Bi2Te3-based compounds are the earliest thermoelectric materials discovered and studied, and they are also the most widely used commercial medium-temperature thermoelectric materials. The limit ZT of its thermoelectric performance has been around ~1 for a long time. With the development of nanotechnology, the research focus of Bi2Te3-based thermoelectric materials has also shifted to the preparation of nanoscale Bi2Te3-based thermoelectric materials. Bi2Te3 nanotubes are prepared by hydrothermal method, and Bi2Te3 thin films are prepared by electrochemical deposition of Bi2Te3-based nanowire arrays, laser pulse deposition and metal-organic chemical vapor deposition. Among them, it is worth mentioning that Bed Poudel et al. used a ba...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 刘宏施毅刘晓晗
Owner SUZHOU UNIV OF SCI & TECH
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