33results about How to "Seebeck coefficient is high" patented technology

The invention relates to a hole compensation type skutterrudite thermoelectric material and a preparation method of the hole compensation type skutterudite thermoelectric material. The hole compensation type skutterudite thermoelectric material is shown in the following description: RyA(4-x)BxSb12/z NC, wherein x is equal to or greater than 0.01 and equal to or less than 0.5, y is equal to or greater than 0.01 and equal to or less than 1 and z is equal to or greater than 0% and equal to or less than 10%; R is selected from at least one of the following group of elements: Ca, Ba, La, Ce, Pr, Nd and Yb; A is selected from at least one of the following group of elements: Fe, Co and Ni; B is selected from at least one of the following group of transition metal elements: Ti, V, Cr, Mn, Fe, Nb, Mo, Tc and Ru, and electron number of the element B is less than that of the element A; and NC is in phase II, wherein z is mole% in the phase II of the thermoelectric material. The invention also provides the preparation method of the hole compensation type skutterrudite thermoelectric material.

The invention discloses a preparation method of a composite material based on a metal organic framework and carbon nanotubes, and a preparation method of a device. The preparation method comprises thefollowing steps: firstly, preparing a P-type Ni<3>(HITP)<2>/CNT composite material and an N-type Ni<3>(HITP)<2>/CNT composite material; then respectively tabletting the P-type Ni<3>(HITP)<2>/CNT composite material and the Ni<3>(HITP)<2>/CNT composite material by using a square tabletting mold at a pressure of 10-30 MPa for 5-30 minutes so as to obtain a P-type composite block material and an N-type composite block material, then assembling the P-type composite block material and the N-type composite block material; and connecting connecting parts by using a conductive silver adhesive or a copper wire so as to obtain the device. The N-type stable MOF/CNT composite material with the highest performance is successfully prepared and applied to device circuits, and the porous composite material with high conductivity and low thermal conductivity has potential application value in the fields of catalytic materials, gas adsorption materials, thermal insulation materials and high-performancethermoelectric materials.

The present invention relates to a preparation method for SnTe thermoelectric materials with high output power density and energy conversion efficiency, and relates to the preparation method for SnTethermoelectric material. The problem is solved that the output power density and energy conversion efficiency of the current thermoelectric materials cannot be improved at the same time. The preparation method comprises the steps that: 1, according to the stoichiometric ratio of (SnTe)2.94(In2Te3)0.02-(Cu2Te)3x, the Sn powder, the Te powder, the In powder and the Cu powder are weighed; the mixtureis put in a high-temperature muffle furnace to perform heat preservation at a high temperature, then cooling and heat preservation and finally furnace cooling to obtain ingot casting; and 3, the ingot casting is grinded and put in a graphite mold to perform sintering at a certain temperature and pressure to obtain In-Cu co-doped SnTe thermoelectric materials. The preparation method for SnTe thermoelectric materials with high output power density and energy conversion efficiency is suitable for preparation of the SnTe thermoelectric materials with high output power density and energy conversion efficiency.

The invention relates to a vertical square column type nanometer thermoelectric power generator for a microcontroller. A substrate includes an N type silicon chip, and is provided with a lower electrode of a thermopile, a polyimide thermal insulation layer, a P type arm of the thermopile, an N type arm of the thermopile, an upper electrode of the thermopile, a first silicon nitride isolation layerand a heat sink. The P type arm and the N type arm of the thermopile are connected in series via the upper and lower electrodes of the thermopile, and concretely, the thermopile is composed of a series of P type polycrystalline silicon nano wire clusters and N type nano wire clusters. The thermal conductivity of a silicon nanometer material used by the generator is much lower than that of a traditional body material, the thermoelectric power generation efficiency is improved, heat loss power generated by the microcontroller is recovered via thermoelectric conversion, higher power output is realized via lower internal resistance of the square column, the output power can reach microwatt and milliwatt level, and power supply requirements of many microsystems, especially low power equipmentnear the microcontroller, can be met.

The invention discloses a preparation method of an organic composite material film and a method for improving thermoelectric performance of the organic composite material film. The preparation methodcomprises the following steps: mixing aniline with a nano-carbon material by stirring, and preparing a composite film of the nano-carbon material and polyaniline through in-situ chemical oxidation polymerization and a camphorsulfonic acid secondary doping method, wherein the composite film of the nano-carbon material and polyaniline is the organic composite material film. The method for improvingthermoelectric performance comprises the following steps: putting the organic composite material film in an alkali solution for soaking treatment for undoping, then taking out the organic composite material film, carrying out washing with clear water until neutrality, and carrying out drying. The preparation process is simple in condition, low in cost, high in controllability and excellent in stability, and is suitable for large-scale industrial production of organic composite thermoelectric materials.

The invention provides a flexible sensing layer, a preparation method of a flexible sensor and the flexible sensor, and relates to the technical field of sensors, and the preparation method of the flexible sensing layer comprises the following steps: preparing a flexible sensing layer matrix with a multi-stage pore structure by using a 3D printing technology; a thermoelectric material coating is additionally arranged on the surface of the flexible sensing layer substrate; and performing plasma treatment on the surface of the thermoelectric material coating to obtain the flexible sensing layer. According to the invention, the internal contact area in a pressure state is changed through the flexible sensing layer substrate with the multi-stage secondary pore structure, the variation amplitude of resistance is influenced, and the pressure sensitivity of the flexible sensing layer is improved; the thermoelectric material coating is additionally arranged, so that the temperature resistance effect is reduced, and signal crosstalk between resistance and thermoelectric voltage signals is reduced; the surface of the thermoelectric material coating is subjected to plasma treatment, so that the carrier concentration is improved, the Seebeck coefficient is further improved, and the effect of improving the temperature sensitivity of the sensor is achieved.

A thermopile infrared sensor with improved output voltage-Johnson noise S/N ratio, infrared absorption characteristics, and production yield, and a manufacturing method thereof. A thermoelectric element is formed on a substrate with a cavity, and by means of the contact between the polysilicon layer and the metal thin film layer, a hot junction part is formed on the chip center side of the polysilicon layer, and a cold junction part is formed on the peripheral side of the chip, and used The metal thin film layer connects the hot junction part and the adjacent cold junction part to form a column of thermoelectric elements connected in series.

The invention discloses a laser irradiation PbS quantum dot embedded SnSe thermoelectric material and a preparation method and application thereof, which belong to the technical field of thermoelectric materials and devices. The preparation method comprises the following steps of uniformly dispersing PbS in a solvent to obtain a solution A, and performing irradiation treatment on the solution A through a non-focused laser in ultrasound to obtain a solution B, uniformly dispersing SnCl2.2H2O in a solvent to obtain a solution C, and uniformly dispersing NaSeO3 in the solution C to obtain a solution D, uniformly mixing the solution B and the solution D to obtain a solution E, uniformly dispersing NaOH into the solution E, then carrying out solvothermal reaction, and cleaning and drying an obtained product system to obtain a solid product, and carrying out spark plasma sintering pressing treatment on the solid product to prepare the laser irradiation PbS quantum dot embedded SnSe thermoelectric material. The prepared laser irradiation PbS quantum dot embedded SnSe thermoelectric material improves the conductivity and Seebeck coefficient, and can be applied to preparation of a deep space spacecraft ultra-long life power supply or preparation of a self-powered infinite sensor and other application occasions.

The invention provides a nano-film rectangular thermocouple array thermoelectric micro-nano generator in a radio frequency transceiver. A substrate is an N-type silicon wafer, and P-type arms of a thermopile, N-type arms of the thermopile, a first silicon nitride spacer, an electrode Ti/Au layer of the thermopile, a second silicon nitride spacer and a heat sink metal Al layer are prepared. The main unit of the thermoelectric micro-nano generator is a thermopile. The thermopile is composed of several P-type arms and N-type arms. The thermoelectric arms use a periodic nano-silicon multilayer film, a layer of metal Ti/Au is sputtered to connect P-type and N-type thermoelectric arms in series, and a thermopile structure is obtained by serial connection. The nano-silicon film used in the generator has much lower thermal conductivity than the conventional body material, thereby greatly improving the thermoelectric power generation efficiency. The waste heat generated by the generator when using the RF transceiver component is subjected to thermoelectric energy conversion and then is stored in the battery via a DC-DC boost voltage-stabilizing circuit, thereby powering the low-power modules such as the surrounding wireless sensor nodes.

The invention discloses a calcium-manganese-oxygen thermoelectric material and a preparation method thereof, and the thermoelectric material is characterized in that cubic-phase CaMnO3 is used as a matrix phase, lamellar CaO is used as an embedded phase, the embedded phase is dispersed in the matrix phase and is directionally arranged, and a tetragonal perovskite symbiotic structure CaO (CaMnO3) m is formed; the preparation method comprises the following steps: uniformly mixing CaO and MnO2, and then carrying out high-temperature sintering; the mixture subjected to high-temperature sintering is subjected to ball milling, powder is formed, the ball milling mass ratio is (10-30): 1, the ball milling time is 0.5-4 h, and the diameter of the powder reaches 30-1000 nm; collecting powder, and carrying out hot pressing treatment on the powder under inert gas; calcium oxide and manganese oxide are used as raw materials, ball milling and hot pressing are performed to form the tetragonal perovskite symbiotic structure CaO (CaMnO3) m, so that the Seebeck coefficient of the thermoelectric material is improved, the ball milling mass ratio and the ball milling time are controlled, the heat conductivity is reduced, the thermoelectric conversion efficiency of the thermoelectric material is optimized, the cost is reduced, and industrial production is facilitated.

The invention discloses a preparation method of a SnTe Ge-doped thermoelectric material. The preparation method comprises the steps: 1, smelting of the SnTe Ge-doped thermoelectric material and 2, sintering of the SnTe Ge-doped thermoelectric material. According to the application of the SnTe Ge-doped thermoelectric material, under the temperature of 823 K, the Seebeck coefficient is up to 126-129 [mu]VK<-1>, the power factor is 20-24 [mu]Wm<-1>K<-2>, the heat conductivity is as low as 2.69-3.15 Wm<-1>m<-1>, and the thermoelectric figure of merit ZT is 0.58-0.62. Compared with the prior art, the SnTe Ge-doped thermoelectric material has the following advantages: 1, the obtained SnTe Ge-doped thermoelectric material has the characteristics of high crystallinity, few impurities, high density, large Seebeck coefficient, low thermal conductivity and large thermoelectric performance improvement amplitude; and 2, the preparation method has the characteristics of commercially available raw materials, low cost, short reaction period, low energy consumption in the reaction process, low pollution, simple process operation, high repeatability and strong controllability.

The invention discloses a planar strip-type nano thermoelectric generator for a microcontroller. The substrate is an N-type silicon wafer, and a P-type arm 2 of a thermopile, an N-type arm 3 of the thermopile, polymethyl methacrylate 4, a first silicon nitride isolation layer 5, a metal aluminum connecting wire 6, a second silicon nitride isolation layer 7 and a cooling plate 8 are prepared. A positive electrode and a negative electrode are connected as shown in Figure 2, the P-type thermoelectric arm 2 and the N-type thermoelectric arm 3 are connected through the metal aluminum 6, and in particular, the thermopile is formed by a series of P-type polysilicon nanowire clusters and N-type polysilicon nanowire clusters, and details are seen in local enlargement in Figure 2. Through thermoelectric conversion, thermal dissipation power generated by working of the microcontroller can be recovered; the thermal conductivity of the adopted silicon nano-particles is much lower than that of the traditional material, heat transfer is suppressed while electronic transportation is maintained, the thermoelectric generation efficiency is improved; and finally, the electric energy generated duringthe above process can be provided for low-power consumption equipment near the microcontroller.

The invention relates to a high-performance PEDOT-tellurium nanoparticle composite film and a preparation method thereof, wherein the composite film comprises a PEDOT film and tellurium nanoparticlesuniformly distributed in the PEDOT film, the particle size of the tellurium nanoparticle is 2-300 nm, and the content of the tellurium nanoparticle is 1.1-33.9 wt%. According to the present invention,with the high-performance PEDOT-tellurium nanoparticle composite film, the Seebeck coefficient of the material can be effectively improved under the extremely low adding amount of tellurium.