Bismuth telluride-based n-type thermoelectric material and preparation method thereof

A thermoelectric material, bismuth telluride technology, applied in the direction of thermoelectric device junction lead wire material, thermoelectric device manufacturing/processing, etc. To achieve the effect of reducing thermal conductivity, outstanding thermoelectric performance, and improving Seebeck coefficient

Inactive Publication Date: 2022-03-22
SUZHOU UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, nano-Bi 2 Te 3 The development of base thermoelectric materials is greatly restricted, and it is difficult to form large-scale industrial applications. Therefore, the development of bulk thermoelectric materials with high thermoelectric performance has become a new trend in the industrial application of thermoelectric materials.

Method used

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  • Bismuth telluride-based n-type thermoelectric material and preparation method thereof
  • Bismuth telluride-based n-type thermoelectric material and preparation method thereof
  • Bismuth telluride-based n-type thermoelectric material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The optional elemental raw materials can be selected according to Bi 2 (Te 0.92 Se 0.08 ) 3 , chemical formula content weighing, where Te is 500 grams, Bi content can be increased by 0.4% by weight on the basis of the normal stoichiometric ratio; metal antimony (Sb) and 0.02% by weight are added on the basis of the stated weight 0.03% non-metallic iodine (I), the purity of all elemental raw materials is above 4N;

[0022] Put the above-mentioned weighed materials into the sintered flat quartz tube at the bottom, vacuumize and seal the tube, then put it into a resistance-heated swing furnace, place the quartz tube vertically, and react at 800 °C for 12 hours. Swing the furnace body, ① the swing frequency is controlled at 0.04Hz, and the swing time is determined by the fluctuation of the furnace field temperature from the beginning of swing until the temperature indication value is constant; ② the interval between two adjacent swings is 50 minutes, After the reaction,...

Embodiment 2

[0024] Cut and polished samples (Bi 1-x Sb x ) 2 Te 3 Perform thermoelectric performance tests. (Bi prepared by the above method 1- x Sb x ) 2 Te 3 Block samples were cut with a wire cutter and sanded. The sample is first cut into basic discs and cuboid samples with a cutting machine, and then polished with sandpaper; the thickness of the disc sample is 2.0mm, and the diameter is 12.0mm. The cross-sectional area of ​​the cuboid is 2.5×2.5mm2. The thermal diffusivity of the wafer was tested on a NETZSCH LFA467 laser thermal conductivity meter, using pyrocream 9606 as a standard sample, and tested under an argon atmosphere. The conductivity and Seebeck coefficient of the samples were tested on ULVAC ZEM-3.

Embodiment 3

[0026] Sample (Bi 1-x Sb x ) 2 Te 3The thermoelectric performance test results of

[0027] The above test results show that the resistivity increases with temperature, from 10.1*10-6Ωm at room temperature to 2.7*10-5Ωm at 480K. The absolute value of the Seebeck coefficient first increases with the increase of temperature, reaches a maximum of 247μV / K at 320K, and then decreases. A positive Seebeck coefficient indicates that (Bi 1-x Sb x ) 2 Te 3 Most of the carriers are holes. The thermal conductivity becomes smaller as the temperature increases, and the thermal conductivity near room temperature is 1.3W / m.K. According to the figure of merit calculation formula of thermoelectric materials: Z=S2σ / K, where S is the Seebeck coefficient of the material, σ is the electrical conductivity, and K is the thermal conductivity, it can be drawn that (Bi 1-x Sb x ) 2 Te 3 The ZT value of the sample was 1.33 at 340K.

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Abstract

The invention discloses a bismuth telluride-based N-type thermoelectric material and a preparation method thereof. It was synthesized by two-step method of melt-mixing and zone melting. Synthetic method: select the elemental raw materials according to Bi 2 (Te 1‑x Sex) 3 , 0.02≤x≤0.1, the chemical formula content is weighed, adding the metal antimony (Sb) of 0.01%-0.03% by weight and the non-metallic iodine (I) of 0.03%-0.06% by weight on the basis of the weighed weight; Put it into a quartz tube with a relatively flat sintered bottom for vacuum sealing, then put it into a resistance-heated swing furnace, place the quartz tube in a vertical position, and then sinter it by melting and mixing. After sintering is completed and naturally cooled to room temperature, the quartz tube is taken out and placed on a vertical zone furnace for pulse zone melting. The invention has the advantages that: the preparation method is simple, and a bulk material with high density, near single crystal structure and a small amount of nano crystal grains can be obtained.

Description

technical field [0001] The invention relates to a bismuth telluride-based thermoelectric material Bi 2 (Te 1-x Se x ) 3 The invention and a preparation method thereof belong to the field of inorganic materials. Background technique [0002] Bi 2 Te 3 The base compound is the earliest thermoelectric material discovered and studied, and it is also the most widely used commercial medium-temperature thermoelectric material. The limit ZT of its thermoelectric performance has been around ~1 for a long time. With the development of nanotechnology, Bi 2 Te 3 The research focus of the base thermoelectric materials has also shifted to the nanoscale Bi 2 Te 3 Preparation of base thermoelectric materials. Preparation of Bi by hydrothermal method 2 Te 3 nanotubes, and electrochemically deposited Bi 2 Te 3 Based on nanowire arrays, laser pulse deposition and metal-organic chemical vapor deposition and other methods to prepare Bi 2 Te 3 film. Among them, it is worth menti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 刘宏施毅刘晓晗
Owner SUZHOU UNIV OF SCI & TECH
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