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Laser irradiation PbS quantum dot embedded SnSe thermoelectric material and preparation method and application thereof

A laser irradiation, thermoelectric material technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc. The effect of improving Seebeck coefficient, improving electrical conductivity, and strong crystallinity

Active Publication Date: 2021-10-22
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the polycrystalline SnSe thermoelectric material maintains low thermal conductivity and high Seebeck coefficient, its electrical conductivity is still very low, which limits its use as a thermoelectric material.

Method used

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  • Laser irradiation PbS quantum dot embedded SnSe thermoelectric material and preparation method and application thereof
  • Laser irradiation PbS quantum dot embedded SnSe thermoelectric material and preparation method and application thereof
  • Laser irradiation PbS quantum dot embedded SnSe thermoelectric material and preparation method and application thereof

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preparation example Construction

[0030] The invention provides a preparation method for laser irradiation of PbS quantum dots embedded in SnSe thermoelectric materials, comprising the following steps:

[0031] Step 1, mixing 0.1-0.3g of PbS and 10mL of ethylene glycol to obtain solution A;

[0032] Step 2, irradiating solution A with a non-focused laser for 5 to 15 minutes in ultrasound, with a laser frequency of 10 Hz, a wavelength of 1064 nm, and a power of 300 to 800 mJ, to obtain solution B;

[0033] Step 3, the SnCl of 0.5~2.5g 2 2H 2 The ethylene glycol of O and 40mL is mixed, obtains solution C;

[0034] Step 4, the NaSeO of 1.0~2.0g 3 Mix with solution C to obtain solution D;

[0035] Step 5, mixing solution B and solution D to obtain solution E;

[0036] Step 6, mixing 3-5g of NaOH with solution E to obtain solution F;

[0037] Step 7, put the solution F in the reaction kettle, and carry out the solvothermal reaction at 200-230°C for 24-36h; the product system after the reaction is washed three...

Embodiment 1

[0042] (1) Mix 0.1g of PbS and 10mL of ethylene glycol to obtain solution A;

[0043] (2) The solution A was irradiated by a non-focused laser in ultrasound for 5 minutes, the frequency of the laser was 10 Hz, the wavelength was 1064 nm, and the power was 300 mJ to obtain a solution B;

[0044] (3) 1.7g of SnCl 2 2H 2 The ethylene glycol of O and 40mL is mixed, obtains solution C;

[0045] (4) 1.3g of NaSeO 3 Mix with solution C to obtain solution D;

[0046] (5) Mix solution B and solution D to obtain solution E;

[0047] (6) 3g of NaOH is mixed with solution E to obtain solution F;

[0048] (7) Put the solution F in the reaction kettle, and carry out solvothermal reaction at 200°C for 24 hours; the product system after the reaction was washed with deionized water and ethanol three times, and then vacuum-dried at 80°C to obtain a solid product;

[0049] (8) The solid product obtained in step 7 was pressed by spark plasma sintering for 5 minutes at a pressure of 50 MPa t...

Embodiment 2

[0052] (1) Mix 0.1g of PbS and 10mL of ethylene glycol to obtain solution A;

[0053] (2) The solution A was irradiated by a non-focused laser in ultrasound for 5 minutes, the frequency of the laser was 10 Hz, the wavelength was 1064 nm, and the power was 400 mJ to obtain a solution B;

[0054] (3) 1.8g of SnCl 2 2H 2 The ethylene glycol of O and 40mL is mixed, obtains solution C;

[0055] (4) 1.4g of NaSeO 3 Mix with solution C to obtain solution D;

[0056] (5) Mix solution B and solution D to obtain solution E;

[0057] (6) 3.5g of NaOH is mixed with solution E to obtain solution F;

[0058] (7) Put the solution F in the reaction kettle, and carry out solvothermal reaction at 200°C for 24 hours; the product system after the reaction was washed with deionized water and ethanol three times, and then vacuum-dried at 80°C to obtain a solid product;

[0059] (8) The solid product obtained in step 7 was pressed by spark plasma sintering for 7 minutes at a pressure of 50 MPa...

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Abstract

The invention discloses a laser irradiation PbS quantum dot embedded SnSe thermoelectric material and a preparation method and application thereof, which belong to the technical field of thermoelectric materials and devices. The preparation method comprises the following steps of uniformly dispersing PbS in a solvent to obtain a solution A, and performing irradiation treatment on the solution A through a non-focused laser in ultrasound to obtain a solution B, uniformly dispersing SnCl2.2H2O in a solvent to obtain a solution C, and uniformly dispersing NaSeO3 in the solution C to obtain a solution D, uniformly mixing the solution B and the solution D to obtain a solution E, uniformly dispersing NaOH into the solution E, then carrying out solvothermal reaction, and cleaning and drying an obtained product system to obtain a solid product, and carrying out spark plasma sintering pressing treatment on the solid product to prepare the laser irradiation PbS quantum dot embedded SnSe thermoelectric material. The prepared laser irradiation PbS quantum dot embedded SnSe thermoelectric material improves the conductivity and Seebeck coefficient, and can be applied to preparation of a deep space spacecraft ultra-long life power supply or preparation of a self-powered infinite sensor and other application occasions.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials and devices, and relates to a laser-irradiated PbS quantum dot embedded SnSe thermoelectric material and a preparation method and application thereof. Background technique [0002] Thermoelectric materials can realize mutual conversion between thermal energy and electrical energy, which provides a new way to solve energy crisis and environmental problems. Thermoelectric materials can be divided into low temperature thermoelectric materials (300K~500K, such as Bi 2 Te 3 , Bi 2 Te 2.7 Se 0.3 , NiSe 2+x etc.), medium temperature thermoelectric materials (500K~900K, such as SnSe, SnTe, Cu 2 Se and SnSe 1- x S x etc.) and high temperature thermoelectric materials (>900K, such as SnSe, SiGe, etc.). Among them, as a typical representative of medium and high temperature thermoelectric materials, SnSe and its related thermoelectric materials have attracted extensive attention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/16H10N10/01H10N10/852
CPCH10N10/852H10N10/01
Inventor 杨艳玲薛帆侯小江锁国权冯雷叶晓慧张荔和茹梅刘佳隽
Owner SHAANXI UNIV OF SCI & TECH
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