Ferroelectric field effect transistor and preparation method thereof

An electric field effect and transistor technology, which is applied in the field of ferroelectric field effect transistor and its preparation, can solve the problems that ferroelectric field effect transistor is difficult to work normally

Active Publication Date: 2018-05-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0005] The main purpose of the present invention is to provide a ferroelectric field effect transistor and its preparation

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  • Ferroelectric field effect transistor and preparation method thereof
  • Ferroelectric field effect transistor and preparation method thereof
  • Ferroelectric field effect transistor and preparation method thereof

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[0033] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0034] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0035] It should be noted that the terms "first...

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Abstract

The invention provides a ferroelectric field effect transistor and a preparation method thereof. The ferroelectric field effect transistor includes a substrate, a source/drain, a gate stack, and sidewalls. The gate stack is composed of a gate dielectric layer, a lower electrode layer, a ferroelectric layer, an insulating dielectric layer, and a gate electrode stacked sequentially in a direction away from the substrate. Since the lower electrode and the ferroelectric layer of the ferroelectric field effect transistor are separated from the gate electrode through the insulating dielectric layer,the purpose of improving the ferroelectric characteristics of the ferroelectric layer and reducing the leakage between the lower electrode and the gate electrode can be achieved. The device operatingcharacteristics are improved and the proper operation of the ferroelectric field effect transistor can be ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a ferroelectric field effect transistor and a preparation method thereof. Background technique [0002] With the improvement of the integration density of CMOS devices, the increasing power consumption will become an important bottleneck restricting the further development of integrated circuits. Reducing the operating voltage by reducing the subthreshold swing of the device is an effective solution to reduce power consumption, and the negative capacitance field effect transistor is an effective technical route to realize this solution. [0003] During the erasing and writing process of the memory based on the floating gate or charge trapping principle, the carriers need to tunnel through the gate dielectric under a high electric field (the gate voltage is greater than 5V), which poses challenges to the circuit design and limits the operation of the device. life. Ferroel...

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Application Information

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IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/6684H01L29/78391
Inventor 朱正勇朱慧珑尹晓艮
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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