168results about How to "Improve working characteristics" patented technology

This invention relates to a stepless meshing control clutch with large power. The clutch, super clutch, control derailleur, line clutch, control strains drive device, which are designed by the principles of meshing stepless displacement and the continuous meshing stepless locking and control, which are suitable to automobile, derailleur, impulse derailleur, automatic derailleur, machine bed and other locations needing large power.

The disclosed resonance-form micro-mechanical gyro comprises: a comb-like crossed driver, a plate mass block, a lever-form amplifier, and a dual-end fork resonator. Wherein, forcing voltage on the driver, the mass block oscillates along x-axis and generates Coriolis force forced by external z-axis rotation; after amplifying by the lever, the Coriolis force acts on the resonator to regulate the motion periodically; it obtains the input angular frequency by measuring the difference output of the resonator. This invention improves sensitivity, resolution, and dynamic range, and convenient to digital process.

The invention relates to a method for inhibiting second harmonic current of a preceding-stage inverter of a two-stage inverter and a control circuit of the preceding-stage inverter of the two-stage inverter. By the method, the low-frequency pulse current of the preceding-stage direct current inverter can be inhibited obviously, the dynamic performance can be improved and the dynamic response speed is increased. The control circuit of the preceding-stage inverter consists of a band-pass filter, a voltage regulator, a summator, a power-width modulation (PWM) modulator and a driving circuit. The work principle is as follows: a voltage sampling circuit detects intermediate bus voltage, compares the intermediate bus voltage with a voltage reference signal to generate an error signal and transmits the error signal to the voltage regulator; a current sampling circuit detects the inductive current of the preceding-stage direct current inverter; the inductive current of the preceding-stage direct current inverter, an output signal of band-pass filter and an output signal of the voltage regulator are added by the summator to generate a modulation signal; the modulation signal is transmitted to a PWM modulation circuit; and a driving signal of a switch tube is acquired by the driving circuit, so that operation of the preceding-stage direct current inverter is controlled.

The invention discloses a driver topological structure of an open-winding motor and a modulation method of the driver topological structure. According to the driver topological structure, each bridgearm comprises an upper bridge arm power switching device and a lower bridge arm power switching device; the upper node of the upper bridge arm power switching device of each bridge arm is connected with a direct-current bus-bar voltage; the lower node of the lower bridge arm power switching device is connected with power source ground; the lower node of the upper bridge arm power switching deviceand the upper node of the lower bridge arm power switching device are connected with each other so as to be adopted as the output node of the bridge arm; the output node of the first bridge arm is connected with the left node of the A-phase stator winding of the open-winding motor, and the output node of the second bridge arm is connected with the right node of the A-phase stator winding of the open-winding motor and the left node of the B-phase stator winding of the open-winding motor; the output node of the third bridge arm is connected with the right node of the B-phase stator winding of the open-winding motor and the left node of the C-phase stator winding of the open-winding motor; and the output node of the fourth bridge arm is connected with the right node of the C-phase stator winding of the open-winding motor. With the driver topological structure for the open-winding motor of the invention adopted, the power density of a driver can be improved, and the working performance ofthe motor can be ensured.

The invention relates to a fractal array bionic ultra-wideband antenna which comprises a substrate and a fractal array bionic radiation patch adhering to the front side of the substrate. The fractal array bionic radiation patch is an antenna array formed by arranging 25 photonic crystal batwing bionic small antennas according to a crisscrossed array structure. The invention ensures that the antenna array has a large working bandwidth while enhancing the antenna radiation intensity through the array.

In a rear wheel suspension system (30) in a four-wheeled vehicle (10) wherein a joint member (31) is mounted in a rear portion of a vehicle body (11) with a pair of left and right front wheels (13,14) secured thereto, the joint member (31) comprising a roll shaft (41) extending substantially in the longitudinal direction of the vehicle body and a vertical swing shaft (36) extending in the transverse direction of the vehicle body, and a power unit (32) which supports rear wheels (26) and (27) is connected to a rear part of the joint member (31), thereby allowing the power unit (32) to be secured to the vehicle body (11) rollably and swingably, the roll shaft (41) is mounted so that a front end part (41a) thereof is positioned lower than a rear end part (41b) thereof. It is possible to easily attain the reduction in weight of the vehicle, set a weight distribution of the vehicle freely, and improve the vehicular design freedom.

The invention discloses an SRAM dual-position unit wiring method which wires bit lines BL and BLb, and power lines Vss and Vdd along vertical direction by Metal 2, and wires a word line WL along horizontal direction by Metal 3, which not only reduces resistance on connection lines of bit lines BL and BLb, but also reduces coupling capacitance of bit lines BL and BLb and circumferential wired lines, so that performance characteristic of SRAM is improved. In addition, the bit lines BL and BLb are wired by Metal 2 so that metal wiring above SRAM has one more selection.

The invention relates to a control method of a methyl alcohol splitting decomposition and hydrogen production hybrid power system based on engine waste heat recovery. The method comprises the step of by dividing the work operation of vehicles into nine states comprising a start state, an idle speed stop state, a starting state, a small load state, an intermediate load state, a large load state, a rapid acceleration state, a rapid deceleration state and a flameout parking state. By means of the method, the hybrid power system can work in the best economic region, engine waste heat is sufficiently recovered, the energy utilization rate is improved, fuel oil consumption and engine emission are reduced, and the purposes of energy conservation and emission reduction are truly achieved.

The invention provides a ferroelectric field effect transistor and a preparation method thereof. The ferroelectric field effect transistor includes a substrate, a source/drain, a gate stack, and sidewalls. The gate stack is composed of a gate dielectric layer, a lower electrode layer, a ferroelectric layer, an insulating dielectric layer, and a gate electrode stacked sequentially in a direction away from the substrate. Since the lower electrode and the ferroelectric layer of the ferroelectric field effect transistor are separated from the gate electrode through the insulating dielectric layer,the purpose of improving the ferroelectric characteristics of the ferroelectric layer and reducing the leakage between the lower electrode and the gate electrode can be achieved. The device operatingcharacteristics are improved and the proper operation of the ferroelectric field effect transistor can be ensured.

An arrestor in which surface pressure at the interface between the inner peripheral surface of a reception opening of a fixed bushing and the outer peripheral surface of the forward end of an insulation tube is maintained at an appropriate level. The arrestor has the insulation tube (1) having a conductor (2) at its forward end, a stacked body (4) of arrestor elements, inserted into the insulation tube (1) with a high-voltage electrode (3) in between, a ground electrode (5) placed at the rear end side of the arrestor element stacked body (4), a coiled spring (8) placed at the rear end side of the ground electrode (5) so as to be concentric with the insulation tube (1), a metal case (6) surrounding the insulation tube (1), the ground electrode (5), and the spring (8), and a sealing member (7) installed at the opening on the rear end side of the metal case (6). The outer diameter of the rear end side of the insulation tube (1) is set smaller than the outer diameter of the center portion of the insulation tube (1). Also, a tapered outer surface (13) is provided at the outer periphery of the forward end (11) of the insulation tube (1).

The invention relates to a TFT-LCD array substrate and a making method thereof. The array substrate comprises a gate line, a data line, a thin film transistor, a pixel electrode and a common electrode line, wherein the gate line, the data line and the thin film transistor are formed on the substrate, and the pixel electrode and the common electrode line form a storage capacitor, a pulse electrodeis arranged between the common electrode line and the pixel electrode and is used for enabling the storage capacitor to have a first capacitance value when the pixel electrode is started to be charged and enabling the storage capacitor to have a second capacitance value when pixel electrode charging is finished, and the first capacitance value is smaller than the second capacitance value. In the invention, because the pulse electrode is arranged between the common electrode line and the pixel electrode, on the one hand, the storage capacitor has the smaller capacitance value when pixel electrode charging is started so as to lower load of the thin film transistor and enhance the charging capability of the thin film transistor, and on the other hand, the storage capacitor has the larger capacitance value when pixel electrode charging is finished to strengthen the holding property of voltage of the pixel electrode and lower the leaping voltage of the pixel electrode at the moment that the thin film transistor is closed.

A modified asphalt Contactor reactor for blending and reacting asphalt cement and modifiers is described; for example, a vertically oriented vessel having an outer shell having an internal surface and an external surface, a lower end and a flat flanged top; an internal circulation tube having a base, a top and an outside surface, wherein the outside surface of the internal circulation tube and the internal surface of the outer shell forms an annulus; a heating jacket having heating oil inlet and a heating oil outlet coupled to the external surface of the outer shell for circulation of heating oil; and a hydraulic head assembly having an impeller coupled to the lower end the vertically oriented vessel wherein the impeller is located near the base of the internal circulation tube, wherein the impeller and the annulus are of sufficient size to facilitate the flow of high viscosity fluids.

The invention discloses a 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube, mainly solving the problems of increased OFF leakage current, threshold voltage drift and subthreshold oscillation amplitude degradation of a conventional 65nm MOS field-effect tube under a total dose radiation environment. The MOS field-effect tube comprises a P-type substrate (1) and an epitaxial layer (2) located on the substrate, wherein an isolation groove (3) is formed around a place above the epitaxial layer, a grid electrode (4) is arranged at the middle above the epitaxial layer, a source region (5) and a drain region (6) are arranged in the epitaxial layer between two side boundaries of the grid electrode and the inner boundary of the isolation groove, light-doping source-drain regions (7) are arranged in the epitaxial layer below the two side boundaries of the grid electrode, a channel is formed in an area between the two light-doping source-drain regions and right below the grid electrode, and a heavy-doping super-steep reverse-doping region (8) is arranged below the channel between the two light-doping source-drain regions. The 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube improves the total dose irradiation resistance of a device, and can be used for the preparation of large scale integrated circuits.

The invention relates to a charge storage type insulated gate bipolar transistor and a preparation method thereof, belonging to the technical field of power semiconductors. By improving the charge storage layer of the traditional charge storage type IGBT device, a semiconductor material used for the charge storage layer remote from the drift region has a larger band gap than a semiconductor material used for the charge storage layer close to the drift region, so that the semiconductor materials with different forbidden band widths form the same-type heterojunction at their contact interfaces,thereby forming a potential barrier that prevents minority carriers in the drift region from entering the base region. As a result, the carrier distribution concentration in the drift region is improved, the conductivity modulation effect of the IGBT is enhanced, the forward conduction voltage drop Vceon of the device is reduced, the breakdown voltage of the IGBT is optimized, and the tradeoff between the forward conduction voltage drop Vceon and the shutdown loss Eoff is achieved. Moreover, by adjusting the doping concentration of materials with different bandgap widths in the charge storagelayer and the combination of materials with different bandgap widths, the invention can further optimize the working characteristics of the device.

The invention discloses an anchor cable outer anchor head steel strand protective device. The anchor cable outer anchor head steel strand protective device comprises steel strands, a steel base plate and an anchor. The steel strands include the inner steel strand located in a rock body and the outer anchor head steel strand extending out of the outer side of the anchor. The periphery of the outer anchor head steel strand is sleeved with a cylindrical protective cover, and a flange is arranged at the end of the cylindrical protective cover and connected to the steel base plate through bolts. The top wall of the protective cover is provided with a first exhaust pipe and a first oil inlet. The upper portion of the protective cover is provided with an oil supply tank, an oil outlet is formed in the bottom wall of the oil supply tank, the oil supply tank is fixed to the steel base plate through an oil supply oil tank supporting frame, and the top wall of the oil supply tank is provided with a second exhaust pipe and a second oil inlet. The first oil inlet and the oil outlet are connected through an indicator pipe. The invention further discloses an installation method of the anchor cable outer anchor head steel strand protective device. The anchor cable outer anchor head steel strand protective device is simple, practical, efficient, economical and capable of guaranteeing that the outer anchor head steel strand is immersed in an oil body all the time, and an inspector can visually judge the oil level in the protective cover.