Thin film transistor and producing method thereof

A technology of thin film transistors and manufacturing methods, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of deterioration of working characteristics of thin-film transistors, and achieve the effect of excellent working characteristics and pollution suppression
CN1577773AInactive Publication Date: 2005-02-09MITSUBISHI ELECTRIC CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
MITSUBISHI ELECTRIC CORP
Publication Date
2005-02-09
Estimated Expiration
Not applicable · inactive patent

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Abstract

Provided is a manufacturing method of a thin film transistor extremely low in a defect level which is excellent in an operation property. The method includes steps of: forming an undercoat film comprising a silicon nitride film 2 and a silicon oxide film 3 on an insulating substrate 1; forming an amorphous silicon film 10 on the undercoat film; forming an interface protecting film comprising a silicon oxide film 11 on the silicon film 10; laser-annealing the silicon film 10 by irradiating a YAG laser on the substrate on which the interface protecting film is formed; patterning the silicon film 4 after laser annealing; and forming a gate insulating film comprising a silicon oxide film 5 on the substrate after patterning wherein the undercoat film, the amorphous silicon 10, and the interface protecting film are sequentially formed in a vacuum chamber while a vacuum state is maintained.
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Description

technical field

[0001] The present invention relates to a thin film transistor and a method of manufacturing the same, and more specifically, to a method of manufacturing a thin film transistor using polysilicon obtained by laser annealing amorphous silicon as a semiconductor layer, such as a thin film transistor constituting each pixel of a liquid crystal display device improvement of. Background technique

[0002] A so-called active matrix liquid crystal display device is formed by forming a plurality of thin film transistors in a matrix on a glass substrate. Generally, an amorphous silicon film can be produced at a lower temperature than a silicon oxide film, so thin-film transistors using an amorphous silicon film as a semiconductor layer, so-called amorphous silicon TFTs, are widely used in conventional liquid crystal display devices. (Thin Film Transistor).

[0003] However, thanks to the development of laser annealing technology for locally melting and crystallizing...

Claims

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