65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube

A field effect transistor and reverse doping technology, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problem of poor anti-radiation characteristics of nMOS field effect transistors, reduced threshold voltage of nMOS field effect transistors, and off-state leakage Current increase and other issues, to achieve the effect of improving the anti-radiation characteristics, improving the anti-radiation performance, and reducing the off-state leakage current

Active Publication Date: 2016-04-20
XIDIAN UNIV
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In CMOS circuits under the 65nm process, pMOS field effect transistors have good radiation resistance characteristics, but nMOS field effect transistors have poor radiation resistance characteristics
The thin gate oxide layer has little effect on the total dose irradiation characteristics of nMOS field effect transistors, such as figure 1 As shown, the trap charges generated in the sidewall of the STI region contacted with the substrate by irradiation will generate a leakage channel in the substrate of the nMOS field effect transistor, which will lead to a decrease in the threshold voltage of the nMOS field effect transistor and an off-state leakage current increase and degradation of subthreshold properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube
  • 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube
  • 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0040] Example 1: Making a substrate with a doping concentration of 2×10 17 cm -3 , the doping concentration of the source and drain regions is 1×10 19 cm -3 , the diffusion length of the source and drain regions is 50nm, and the ultra-steep retrograde doping concentration is 6×10 17 cm -3 , a 65nm nMOS field effect transistor with an ultra-steep inverse doping depth of 58nm and an ultra-steep inversion length of 5nm.

[0041] Step 1, growing an epitaxial layer.

[0042] First use the method of chemical vapor deposition to SiH at a temperature of 650 °C 4 growing an epitaxial layer with a thickness of 600nm in the (100) crystal direction of the P-type Si substrate as a reactant;

[0043] Then doped with 2×10 by diffusion process 17 cm -3 The concentration of boron ions forms a p-type doped region with a depth of 100nm on the surface of the epitaxial layer to adjust the channel concentration.

[0044] Step 2, etching the isolation groove.

[0045] First grow thin SiO ...

example 2

[0076] Example 2: Making a substrate with a doping concentration of 5×10 17 cm -3 , the doping concentration of the source and drain regions is 3×10 19 cm -3 , the diffusion length of the source and drain regions is 55nm, the diffusion length of the source and drain regions is 50nm, and the ultra-steep retrograde doping concentration is 1×10 18 cm -3 , a 65nm nMOS field effect transistor with an ultra-steep inverse doping depth of 54nm and an ultra-steep inversion length of 20nm.

[0077] Step 1, growing an epitaxial layer.

[0078] 1.1) Using the chemical vapor deposition method at a temperature of 600 ° C to SiH 4 An epitaxial layer with a thickness of 800nm ​​is grown on a P-type substrate as a reactant;

[0079] 1.2) Doping 5×10 by diffusion process 17 cm -3 The concentration of boron ions forms a p-type doped region with a depth of 150nm on the surface of the epitaxial layer to adjust the channel concentration.

[0080] Step 2, etching the isolation groove.

[0...

example 3

[0117] Example 3: Making a substrate with a doping concentration of 9×10 17 cm -3, the doping concentration of the source and drain regions is 5×10 19 cm -3 , the diffusion length of the source and drain regions is 60nm, and the ultra-steep retrograde doping concentration is 2×10 18 cm -3 , a 65nm nMOS field effect transistor with an ultra-steep inverse doping depth of 53nm and an ultra-steep inversion length of 27nm.

[0118] Step a, growing an epitaxial layer.

[0119] SiH was deposited at a temperature of 500 °C by chemical vapor deposition 4 An epitaxial layer with a thickness of 1000nm is grown on a P-type substrate as a reactant; doped with 9×10 17 cm -3 The concentration of boron ions forms a p-type doped region with a depth of 150nm on the surface of the epitaxial layer to adjust the channel concentration.

[0120] Step b, etching the isolation groove.

[0121] Thin SiO with a thickness of 5 nm was grown on the epitaxial layer by a dry oxygen oxidation process...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube, mainly solving the problems of increased OFF leakage current, threshold voltage drift and subthreshold oscillation amplitude degradation of a conventional 65nm MOS field-effect tube under a total dose radiation environment. The MOS field-effect tube comprises a P-type substrate (1) and an epitaxial layer (2) located on the substrate, wherein an isolation groove (3) is formed around a place above the epitaxial layer, a grid electrode (4) is arranged at the middle above the epitaxial layer, a source region (5) and a drain region (6) are arranged in the epitaxial layer between two side boundaries of the grid electrode and the inner boundary of the isolation groove, light-doping source-drain regions (7) are arranged in the epitaxial layer below the two side boundaries of the grid electrode, a channel is formed in an area between the two light-doping source-drain regions and right below the grid electrode, and a heavy-doping super-steep reverse-doping region (8) is arranged below the channel between the two light-doping source-drain regions. The 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube improves the total dose irradiation resistance of a device, and can be used for the preparation of large scale integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a MOS field effect transistor, which can be used in the preparation of large-scale integrated circuits. Background technique [0002] MOS field effect transistors are one of the basic components of integrated circuits. They have the advantages of low power consumption, high speed, and high integration, and are widely used in military and aerospace fields. The total radiation dose in the life of a spacecraft can reach hundreds of thousands of rads. Therefore, the research on the radiation effect of the total dose is very important. The total dose radiation effect is due to the electron-hole pairs generated by radiation ionization to generate trap positive charges in the oxide layer and interface trap charges at the oxide layer silicon substrate interface. Under long-term irradiation, the accumulated trap charges reach a certain concentration and lead to an off state....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L23/552H01L21/336
CPCH01L29/7833H01L23/552H01L29/66598
Inventor 刘红侠张丹陈树鹏陈安侯文煜
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap