Semiconductor device and method for manufacturing the same

a semiconductor and capacitor technology, applied in semiconductor devices, capacitors, electrical devices, etc., can solve the problems of reducing reliability and yield of whole memory, affecting the performance of the whole memory, and the technique is not realistic, so as to reduce the degradation of remnant polarization, inhibit the characteristics of the ferroelectric capacitor, and effectively inhibit the damage to the layer
US20060017086A1Inactive Publication Date: 2006-01-26KK TOSHIBA
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
KK TOSHIBA
Publication Date
2006-01-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
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Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application is a divisional of U.S. patent application Ser. No. 10 / 443,107, filed May 22, 2003, which is a divisional of U.S. patent application Ser. No. 09 / 359,324 filed Jul. 23, 1999, which is based upon and claims the benefit of priority from the prior Japanese Patent Application Nos. 208999 / 1998, filed Jul. 24, 1998; 324254 / 1998, filed Nov. 13, 1998; and 345368 / 1998, filed Dec. 4, 1998, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates generally to a semiconductor device including a ferroelectric capacitor having a thin-film structure and a method of manufacturing the same.

[0004] 2. Related Background Art

[0005] There is known a non-volatile semiconductor memory device using a ferroelectric capacitor (which will be hereinafter referred to as a “ferroelectric memory”). The ferroelectric capacitor is formed by stackin...

Claims

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