A-site Pr doping BTO film material and preparation thereof

A kind of thin film material and thin film technology, which is applied in the field of preparation of A-site Pr-doped BTO thin film by radio frequency magnetron sputtering process, can solve the problems that the preparation method has not been published by the prior art, and achieve the purpose of suppressing component segregation and compensating for volatilization Loss, the effect of preventing warping deformation

Inactive Publication Date: 2009-05-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the specific preparation method of +3/+4 valent Pr-dop...

Method used

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  • A-site Pr doping BTO film material and preparation thereof
  • A-site Pr doping BTO film material and preparation thereof
  • A-site Pr doping BTO film material and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1 Preparation of pure Bi under the first parameter 2.9 PR 0.9 Ti 3 o 12 (x=0.9) target and film

[0034] (1) adopt following raw material (its purity is analytically pure, more than 99.9% of purity), use solid phase reaction method to prepare pure Bi for radio frequency magnetron sputtering 2.9 PR 0.9 Ti 3 o 12 target;

[0035] Considering that Bi is volatile at high temperature, the Bi 2.9 PR 0.9 Ti 3 o 12 On the basis of the ideal chemical composition ratio, the composition formula with an excess of 5% Bi is used to compensate for the volatilization loss of Bi.

[0036] bismuth trioxide Bi 2 o3 : Oxidation spectrum Pr 6 o 11 : Titanium dioxide TiO 2 =1.552:0.15:3

[0037] The specific method is:

[0038] 1.1) The weighed Bi 2 o 3 、TiO 2 and Pr 6 o 11 Mix the powder evenly, put it into an agate mortar, and grind it until the powder is uniform khaki; considering Bi 2 o 3 、TiO 2 and Pr 6 o 11 Due to the huge (several times) difference i...

Embodiment 2

[0059] Example 2 Preparation of pure Bi under the second parameter 3.6 PR 0.3 Ti 3 o 12 (x=0.3) target and film methods

[0060] (1) adopt following raw material (its purity is analytically pure, more than 99.9% of purity), use solid phase reaction method to prepare pure Bi for radio frequency magnetron sputtering 3.6 PR 0.3 Ti 3 o 12 target;

[0061] Considering that Bi is volatile at high temperature, the Bi 3.6 PR 0.3 Ti 3 o 12 On the basis of the ideal chemical composition ratio, the composition formula with an excess of 6% Bi is used to compensate for the volatilization loss of Bi.

[0062] bismuth trioxide Bi 2 o 3 : Oxidation spectrum Pr 6 o 11 : Titanium dioxide TiO 2 =1.908:0.05:3

[0063] The specific method is:

[0064] 1.1) The weighed Bi 2 o 3 、TiO 2 and Pr 6 o 11 Mix the powder evenly, put it into an agate mortar, and grind it until the powder is uniform khaki;

[0065] 1.2) Add 35ml of acetone, use a planetary ball mill for 12 hours, cont...

Embodiment 3

[0085] Example 3 Preparation of pure Bi under the third parameter 3.4 PR 0.5 Ti3 o 12 (x=0.5) Target and film methods, including:

[0086] (1) adopt following raw material (its purity is analytically pure, more than 99.9% of purity), use solid phase reaction method to prepare pure Bi for radio frequency magnetron sputtering 3.4 PR 0.5 Ti 3 o 12 target;

[0087] Considering that Bi is volatile at high temperature, the Bi 3.4 PR 0.5 Ti 3 o 12 On the basis of the ideal chemical composition ratio, the composition formula with an excess of 7.5% Bi is used to compensate for the volatilization loss of Bi.

[0088] bismuth trioxide Bi 2 o 3 : Titanium dioxide TiO 2 : Oxidation spectrum Pr 6 o 1 1=1.828:0.083:3

[0089] The specific method is:

[0090] 1.1) The weighed Bi 2 o 3 、TiO 2 and Pr 6 o 11 Mix the powder evenly, put it into an agate mortar, and grind it until the powder is uniform khaki;

[0091] 1.2) Add 35ml of acetone, and use a planetary ball mill to...

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Abstract

The invention relates to the field of information storage thin-film material, disclosing an A-bit Pr doped BTO thin-film material which consists of praseodymium, bismuth, titanium and oxygen ions. The composition molecular formula of the material is Bi(4-11x/9)Pr<x>Ti3O12, and x is 0.3-0.9. The thin-film material is prepared by an RF magnetron sputtering method, which specifically comprises the following steps: depositing Bi(4-11x/9)Pr<x>Ti3O12 target on a Pt/TiO2/SiO2/p-Si substrate, pumping the target to microvacuum, carrying out pre-sputtering, inletting oxygen and argon to regulate working air pressure, re-sputtering, and finally annealing rapidly to obtain the thin film. The thin film prepared by the invention is the polycrystal thin film with random orientation, which has smooth surface, even grain size, low drain current and better ferroelectric hysteresis, thus being compatible with the existing CMOS process.

Description

technical field [0001] The invention relates to the field of information storage thin film materials, in particular to a preparation method for obtaining an A-site Pr-doped BTO thin film by using a radio frequency magnetron sputtering process. Background technique [0002] Compared with traditional semiconductor memory, ferroelectric random access memory (FeRAM) has many outstanding advantages, and has broad application prospects and huge economic benefits. BTO is a ferroelectric thin film material widely used in ferroelectric memory. However, low remanent polarization and poor anti-fatigue properties limit their use in industrial applications. [0003] The doping of A-site rare earth elements can greatly improve the ferroelectric properties and leakage current properties of BTO. The B.H. Park research group reported the preparation of A-site La-doped BTO Bi with excellent ferroelectric properties on Pt electrodes by pulsed laser deposition 4-x La x Ti 3 o 12 Thin film...

Claims

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Application Information

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IPC IPC(8): C01G23/00C23C14/35C23C14/08C23C14/54G11B9/02
Inventor 于军吴云翼王耘波周文利高俊雄李建军郑朝丹刘心明
Owner HUAZHONG UNIV OF SCI & TECH
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