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Process for preparing Si base Bi4 Ti3 O12 ferroelectric film

A preparation process and technology of ferroelectric thin films, which are used in the manufacture/assembly of piezoelectric/electrostrictive devices, circuits, electrical components, etc.

Inactive Publication Date: 2002-10-02
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In addition, in the research of Si-based ferroelectric thin films, some research groups from Motorola, Siemens, Japan and South Korea and domestic Sichuan University, Fudan University, Tsinghua University, Shanghai Institute of Ceramics, Chinese Academy of Sciences, etc. have made some important progress. However, compared with the requirements of practical application, the quality and process consistency of the film still have a long way to go. For Si-based Bi 4 Ti 3 o 12 Research on the I-V characteristics, fatigue characteristics, Sol-Gel preparation process and silicon planar process compatibility of ferroelectric thin films needs to be further studied

Method used

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  • Process for preparing Si base Bi4 Ti3 O12 ferroelectric film
  • Process for preparing Si base Bi4 Ti3 O12 ferroelectric film
  • Process for preparing Si base Bi4 Ti3 O12 ferroelectric film

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Embodiment 2

[0065] In order to test the electrical properties of the sample, it is necessary to prepare an upper electrode (ie, an Ag electrode) on the surface of the prepared ferroelectric thin film sample. Electrodes were prepared by DC magnetron sputtering process. During the preparation, a self-made stainless steel sheet mask is used to cover the ferroelectric thin film. There are many small holes with a diameter of 0.4 mm on the mask, and the required electrodes can be obtained on the surface of the thin film by magnetron sputtering. The sputtering power is about 70W, and the background vacuum is 3×10 -3 Pa and Ar atmosphere were sputtered under 20Pa pressure for one minute, and the thickness of the electrode was about 50nm. Then prepare the bottom full electrode (ie Pt electrode) on the back of the Si substrate by the same process as the upper electrode. The above preparation process is as figure 1 As shown, the cross-sectional view of the prepared test sample is shown in figur...

Embodiment 3

[0079] (2.9) filter to get Bi 4 Ti 3 o 12 Precursor solution; (3) the prepared Bi 4 Ti 3 o 12 Use a dropper to drop 1-2 drops of the precursor solution onto the substrate, start the homogenizer to homogenize the glue, and form a wet film; (5) Dry the well-distributed wet film on a constant temperature hot plate at 200°C, Removing C and H components in the wet film; (5) putting the dried film into a quartz tube furnace for annealing and taking it out. Annealing is carried out under oxygen atmosphere, and annealing temperature is 700 ℃, and oxygen (analytical purity 99.9%) flow rate is 2 liters / minute during annealing, and the annealing time of step 5 is 5 minutes; (6) repeat above-mentioned steps 3-5 eight times, A BIT ferroelectric thin film with a thickness of about 850nm can be obtained. (7) Finally, annealing is carried out in an oxygen atmosphere. The annealing temperature is 700° C., the flow rate of oxygen (analytical purity 99.9%) is 2 liters / minute during anneali...

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Abstract

This invention provides a processing method of Bi1Ti3O12 silicon group ferroelectric water employing butyl titanic acid, glacial acetic acid, bismuth nitrate, and acetylacetone to make up Bi1Ti3O12 sol at the mole rate of 3.00:4.20-4.40 of bytyl titanic acid and bismuth nitrate, the volume percentages of glacial acetic acid, acetylacetone and butyl titanic acid and 10-80%:10-80%:10% separately, by selecting 100 crystal p-type monocrystalline silicon as the substrate, to put drops of sol on it and even it to a moisture wafer to be dried by a fire and annealing to form the desired thickenss of BIT ferroelectric chip by repeating the abore processions of evening gel drying treatment and annealing, which can be used in the process of accumulator with good comprehensive performance in the structure, ferroelectric and dielectric spheres.

Description

[0001] The invention belongs to the field of electronic functional thin film materials, and relates to a preparation process of Si-based ferroelectric thin films, in particular to a Si-based Bi 4 Ti 3 o 12 Sol-Gel ("Sol-Gel") Preparation of Ferroelectric Thin Films. Background technique [0002] Ferroelectric crystals belong to a subfamily of dielectric crystals, piezoelectric crystals and pyroelectric crystals, so ferroelectric crystals must have dielectric, piezoelectric and pyroelectric properties in addition to ferroelectricity, and light-transmitting ferroelectrics also have With electro-optical properties. Due to the special dielectric, electro-optic, acousto-optic, photorefractive, nonlinear optics, pyroelectric and piezoelectric properties of ferroelectrics, it is a material with great commercial application prospects, so the application of ferroelectrics has been very early. It has attracted the attention of the physics and materials science circles. Since the 197...

Claims

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Application Information

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IPC IPC(8): H01L41/39
Inventor 于军王华王耘波周文利谢基凡
Owner HUAZHONG UNIV OF SCI & TECH
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