BiFeO3 target and film production method

A target and thin film technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problem of unpublished BiFeO3 material preparation process, and achieve favorable target phase formation and dense target material. , The effect of dense and uniform surface

Inactive Publication Date: 2009-05-13
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But using this method for BiFeO 3 The detailed prepa

Method used

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  • BiFeO3 target and film production method

Examples

Experimental program
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Example Embodiment

[0040] Example 1 Preparation of pure BiFeO 3 Target and film

[0041] (1) Using the following raw materials (all of which are analytically pure, with a purity of over 99.9%), using an improved solid-phase reaction method to prepare pure BiFeO for RF magnetron sputtering 3 Target

[0042] Considering that Bi is volatile under high temperature conditions, in BiFeO 3 Based on the ideal chemical composition ratio, a composition formula with an excess of 6% of Bi is used to make up for the loss of Bi volatilization.

[0043] Bismuth trioxide Bi 2 O 3 89.803g

[0044] Iron trioxide Fe 2 O 3 29.035g

[0045] The specific method is:

[0046] 1.1) Put the weighed Fe 2 O 3 And Bi 2 O 3 Mix the powder evenly, put it into an agate mortar, and grind it until the powder is uniformly dark red. Preliminary mixing and grinding can effectively prevent the delamination of the mixture during ball milling, thereby inhibiting the segregation of components in the preparation of the target.

[0047] 1.2)...

Example Embodiment

[0070] Example 2 Preparation of A-site Dy-doped Bi 0.95 Dy 0.05 FeO 3 Target and film

[0071] 1) Using the following raw materials (all of which are analytically pure, with a purity of 99.9% or more), a solid-phase reaction method is used to prepare a target material for RF magnetron sputtering with a Dy doping content of 10%;

[0072] Considering that Bi is volatile under high temperature conditions, in Bi 0.95 Dy 0.05 FeO 3 Based on the ideal chemical composition ratio, a composition formula with an excess of 1% Bi is used to make up for the loss of Bi volatilization.

[0073] Bismuth trioxide Bi 2 O 3 90.368g

[0074] Iron trioxide Fe 2 O 3 32.261g

[0075] Dysprosium trioxide Dy 2 O 3 3.768g

[0076] The specific method is:

[0077] 1.1) Put the weighed Fe 2 O 3 , Dy 2 O 3 And Bi 2 O 3 After the powder is mixed evenly, put it in an agate mortar and grind it initially until the powder is uniformly dark red;

[0078] 1.2) Add 40ml of absolute ethanol, use a planetary ball mill ...

Example Embodiment

[0095] Example 3 Preparation of B-site Ti-doped BiFe 0.9 Ti 0.1 O 3 Target and film methods, including

[0096] 1) Using the following raw materials (all of which are analytically pure, with a purity of 99.9% or more), a solid phase reaction method is used to prepare a target material for RF magnetron sputtering with a Ti doping content of 10%;

[0097] Considering that Bi is volatile under high temperature conditions, BiFe 0.9 Ti 0.1 O 3 On the basis of the ideal chemical composition ratio, a formula with an excess of 5% of Bi is used to make up for the loss of Bi volatilization.

[0098] Bismuth trioxide Bi 2 O 3 88.956g

[0099] Iron trioxide Fe 2 O 3 26.131g

[0100] Titanium dioxide TiO2 2.905g

[0101] The specific method is:

[0102] 1.1) The weighed Fe 2 O 3 , TiO 2 And Bi 2 O 3 After the powder is evenly mixed, put it into an agate mortar and grind it initially until the powder is uniformly dark red;

[0103] 1.2) Add 42ml of acetone, use a planetary ball mill for 10 ...

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Abstract

The invention provides a preparation method for a BiFeO3 target material. The preparation method for the BiFeO3 target material comprises the following steps: carrying out grinding, ball milling, preburning, re-ball milling, granulation and screening for the mixture of bismuth oxide Bi2O3 and ferric oxide Fe2O3 to obtain the target material; and then carrying out batch dropping, baking, heating with pressure, heat insulation and cooling for the target material. The invention also provides a method for preparing a film through the BiFeO3 target material. The method comprises the following steps: selecting a Pt/TiO2/SiO2/p-Si substrate; preparing the BiFeO3 film through a radio frequency magnetron sputtering method; and finally carrying out the annealing treatment of the prepared BiFeO3 film. The target material has the advantages of no impurity phase, levelness and compactness. The film prepared through the target material has a compact and even surface, better crystallinity, no impurity phase, low drain current, saturated electric hysteresis loop, good fatigue characteristic, and good repeatability.

Description

Technical field [0001] The present invention relates to BiFeO 3 And the preparation method of the A and B-site doped series targets, and involves the use of this series of targets in Pt / TiO 2 / SiO 2 / p-Si substrate using RF-magnetron sputtering (RF-magnetron Sputtering) method to prepare ferroelectric thin film. Background technique [0002] BiFeO 3 (BFO) is a multiferroic material in which ferroelectric order and magnetic order coexist within a certain temperature range. The material is considered to have broad application prospects in both ferroelectric and magnetic devices. In addition, the magnetoelectric coupling effect caused by the coexistence of magnetism and ferroelectricity makes this material attractive for new types of memory elements for magnetic reading and writing. [0003] BiFeO 3 There are usually three different preparation methods for its A and B-site doped series targets: (1) traditional solid-phase sintering process; (2) sintering process filtered by dilute n...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35C23C14/54
Inventor 于军郑朝丹王耘波刘心明周文利高俊雄吴云翼
Owner HUAZHONG UNIV OF SCI & TECH
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