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Prepn process of boron strontium titanate film material

A barium strontium titanate thin film and thin film technology, which is applied in the field of ferroelectric thin film material preparation, can solve the problems of large process compatibility of BST thin films, and achieve the effects of good ferroelectric performance and uniform grain size

Inactive Publication Date: 2007-03-21
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
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AI Technical Summary

Problems solved by technology

However, the quality and process compatibility of the BST films studied above still have a long way to go from the practical requirements, and the RF magnetron sputtering process, microstructure, and dielectric properties of BST films still need to be further studied.

Method used

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  • Prepn process of boron strontium titanate film material
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  • Prepn process of boron strontium titanate film material

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Embodiment Construction

[0033] The preparation method of barium strontium titanate thin film material of the present invention comprises the following steps of preparation:

[0034] (1) oxidation substrate

[0035] Using P-type (100) single crystal silicon (thickness 0.5mm), wet oxidation layer 500nm thick SiO 2 ;

[0036] (2) Cleaning the substrate

[0037] After soaking the substrate in potassium dichromate solution for ten minutes, rinse it with deionized water, boil it in deionized water for five minutes, and dry it; clean it ultrasonically in acetone for three minutes, dry it; clean it ultrasonically in alcohol for three minutes. minutes, dry

[0038] (3) Prepare the bottom electrode

[0039] Install the platinum target and the titanium target in the magnetron sputtering vacuum chamber, install the mask I and the substrate on the substrate frame, sputter titanium for 30 seconds, and then sputter platinum for 100 seconds;

[0040] (4) Sputtering BST film

[0041] Using self-made radio frequ...

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Abstract

The present invention discloses preparation process of boron strontium titanate (BST) film material. The preparation process includes the first magnetically controlled DC sputtering to prepare Pt / Ti bottom electrode, pre-sputtering BaxSr1-xTiO3 ceramic target material with magnetically controlled RF sputtering apparatus to form BST film, slow heat treatment in O2 atmosphere and repeating the foregoing steps for three times; and final magnetically controlled DC sputtering to prepare upper electrode on the BST film so as to obtain sandwiched material. The said process can obtain ferroelectric BST film with high ferroelectric performance in perovskite structure and homogeneous crystal particle size. The ferroelectric BST film may be used in DRAM, dielectric phase shifter, voltage controlled filter, pyroelectric IR detector and other fields.

Description

technical field [0001] The invention belongs to the preparation technology of ferroelectric thin film materials, in particular to the preparation technology of strontium barium titanate ferroelectric thin film. Background technique [0002] Ferroelectric thin film materials have broad application prospects in the fields of microelectronics, optoelectronics, integrated optics and microelectromechanical systems, and are currently one of the frontiers and hotspots of international research. Barium strontium titanate (Ba x Sr 1-x TiO 3 , referred to as BST) thin film is a kind of ferroelectric thin film, which has the characteristics of strong nonlinearity, small leakage current, not easy to fatigue, adjustable Curie temperature, etc., and can be used to make dynamic random access memory (DRAM), pyroelectric infrared detector and Microwave devices such as dielectric phase shifters and voltage-controlled filters have attracted the attention of researchers from various countrie...

Claims

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Application Information

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IPC IPC(8): C23C28/04C23C14/35C23C14/54
Inventor 杨传仁陈宏伟符春林
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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