Ferroelectric nonvolatile memory and preparation method and read/write operation method thereof

A ferroelectric memory and ferroelectric storage technology, applied in the field of ferroelectric storage, can solve the problems of inability to achieve mass production, compatibility with semiconductor processes, inability to identify, etc., and achieve good data retention characteristics, which is conducive to small size and simple structure. Effect

Active Publication Date: 2016-06-08
FUDAN UNIV
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Problems solved by technology

This atomic force tip technology is not compatible with the current semiconductor process, that is, it cannot achieve mass production; in addition, the rea

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  • Ferroelectric nonvolatile memory and preparation method and read/write operation method thereof
  • Ferroelectric nonvolatile memory and preparation method and read/write operation method thereof
  • Ferroelectric nonvolatile memory and preparation method and read/write operation method thereof

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Embodiment Construction

[0054] The present invention will be further described in detail below in conjunction with the drawings and embodiments, wherein the same or similar elements are represented by the same reference numerals.

[0055] The following introductions are some of the possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, and are not intended to identify key or decisive elements of the present invention or limit the scope of protection.

[0056] In the drawings, for the sake of clarity, the thicknesses of layers and regions are exaggerated, and the dimensional proportional relationship among the various parts in the illustration does not reflect the actual dimensional proportional relationship.

[0057] In the following embodiments, for clarity of description, the domain direction or polarization direction is exemplarily given, but it should be understood that the domain direction or polarization direction of the ferro...

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Abstract

The invention belongs to the technical field of ferroelectric storage, and particularly relates to a ferroelectric nonvolatile memory and a preparation method and a read/write operation method thereof. The ferroelectric memory comprises a ferroelectric thin film layer, a ferroelectric storage unit etched on the surface of the ferroelectric thin film layer, and in-plane read/write electrode layers prepared at the left and right of the ferroelectric storage unit; and a polarization direction of an electric domain is basically not parallel to a normal direction of the read/write electrode layer. When an in-plane structure of the storage unit is changed, the multi-bit information storage can be realized. A read operation and a write operation can be completed by virtue of a storage unit left/right deposited read/write electrode layer etched on the surface, and an additional read electrode and an additional read/write electrode can be additionally arranged on the top of the etched ferroelectric storage unit so as to realize the read operation. The ferroelectric memory is simple in structure, simple in preparation, low in cost and capable of nondestructively and rapidly reading the stored electric-domain logic information in a large-current way.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, and in particular relates to a new type of nonvolatile ferroelectric storage, in particular to etching storage units on the surface of ferroelectric thin film materials and manufacturing in-plane left and right electrodes connected to storage units in the gap between ferroelectric units. An in-plane high-density ferroelectric memory capable of reading and writing operations, a preparation method and a read / write operation method of the ferroelectric memory. Background technique [0002] Ferroelectric random access memory FRAM (Ferroelectric Random Access Memory) uses ferroelectric domains (or "electric domains") to maintain two different polarization orientations as logic information ("0" or "1") under the action of positive and negative electric fields to store data Non-volatile memory (Non-volatileMemory), which can also be called "ferroelectric memory". [0003] The storage medi...

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Application Information

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IPC IPC(8): H01L27/115H01L21/8247G11C11/22
CPCG11C11/223H10B53/30H10B69/00
Inventor 江安全耿文平
Owner FUDAN UNIV
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