Non-destructive readout ferroelectric memory and manufacturing method and read/write operation method thereof

A non-destructive readout and ferroelectric memory technology, which is applied in the field of ferroelectric storage, can solve the problems of reduced ferroelectric capacitor C ratio, affecting data reading speed, and reducing device reliability, and achieves simple write operation and data retention Good properties, good for small size effects

Active Publication Date: 2015-05-20
FUDAN UNIV
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  • Abstract
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Problems solved by technology

[0007] Therefore, the destructive readout (DRO) ferroelectric memory currently commercially used is mainly read out by charge integration to the ferroelectric capacitor. As summarized above, it has the disadvantage of destructive readout. Rewriting data, which is accompanied by a large number of eras

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  • Non-destructive readout ferroelectric memory and manufacturing method and read/write operation method thereof
  • Non-destructive readout ferroelectric memory and manufacturing method and read/write operation method thereof
  • Non-destructive readout ferroelectric memory and manufacturing method and read/write operation method thereof

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Embodiment Construction

[0053] The following introduces some of the possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, but are not intended to identify key or decisive elements of the present invention or limit the scope of protection.

[0054] In the drawings, for the sake of clarity, the thicknesses of layers and regions are exaggerated, and the dimensional proportional relationship among the various parts in the illustration does not reflect the actual dimensional proportional relationship.

[0055] In the following embodiments, for clarity of description, the domain direction or polarization direction is exemplarily given, but it should be understood that the domain direction or polarization direction of the ferroelectric memory is not limited to the embodiment shown in the figure. out direction.

[0056] figure 1 Shown is a schematic cross-sectional structure diagram of a non-destructive readout ferroelectric memory accor...

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Abstract

The invention belongs to the technical field of ferroelectric memory, in particular to a non-destructive readout ferroelectric memory and a manufacturing method and a read/write operation method thereof. The ferroelectric memory comprises a ferroelectric film layer and a read/write electrode layer which is arranged on the ferroelectric film layer, wherein a gap for partitioning the read/write electrode layer into at least two parts is formed in the read/write electrode layer; the polarization direction of the electric domain of the ferroelectric film layer is not basically parallel to the normal direction of the read/write electrode layer; read operation and write operation can be finished through the read/write electrode layer. The ferroelectric memory is simple in structure, is easiness to manufacture, is low in cost, and is suitable for high-density application; a non-destructive current readout way can be realized.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, and in particular relates to a non-destructive readout ferroelectric memory, in particular to a ferroelectric memory for non-destructive readout based on electrodes with gaps and a preparation method and reading method for the ferroelectric memory. / write method. Background technique [0002] FRAM (Ferroelectric Random Access Memory) uses two different polarization orientations of ferroelectric domains (or "electric domains") in the electric field as logic information ("0" or "1") to store data Non-volatile memory (Non-volatile Memory), which may also be called "ferroelectric memory". [0003] The storage medium layer of ferroelectric memory is a ferroelectric thin film layer with reversible (or "flip") ferroelectric domains. At present, the fastest speed of domain inversion that can be measured in the laboratory can reach 0.2 ns, it can actually be faster. Generally, the domain ...

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Application Information

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IPC IPC(8): H01L27/115G11C11/22
Inventor 江安全江钧白子龙
Owner FUDAN UNIV
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