Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber

一种处理腔室、基板的技术，应用在电气元件、电路、半导体/固态器件制造等方向，能够解决提高复杂度和成本等问题

Inactive Publication Date: 2010-12-08
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will increase complexity and cost due to the use of reliable, non-particle-generating high-temperature rotating parts (such as bearings), precision and expensive motors, complex control systems, reliable rotary electrical connectors and reliable rotary vacuum seals

Method used

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  • Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
  • Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
  • Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber

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Embodiment Construction

[0049] Embodiments of the invention encompass methods, apparatus, and systems for supporting, positioning, and rotating substrates during processing. Embodiments of the invention also include methods of controlling heat transfer between a substrate and a substrate support within a processing chamber. During one or more processing steps, such as rapid thermal processing (RTP) processes, chemical vapor deposition (CVD) processes, physical vapor deposition (PVD) processes, atomic layer deposition (ALD) processes, wet cleaning processes (such as taken from Tempest by Applied Materials TM processing chamber), dry etching process, and / or laser annealing, the apparatus and method do not require complex, expensive and often unreliable components to properly position and rotate the substrate. Substrates that can be processed using the methods, apparatus, and systems include 200 millimeter (mm), 300 mm or larger single crystal silicon (Si), multi-crystalline (multi-crystalline) silicon...

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PUM

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Abstract

Embodiments of the invention contemplate a method, apparatus and system that are used to support, position, and rotate a substrate during processing. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein remove the need for complex, costly and often unreliable components that would be required to accurately position and rotate a substrate during one or more processing steps, such as an rapid thermal processing (RTP) process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, atomic layer deposition (ALD) process, dry etching process, wet clean, and / or laser annealing process.

Description

technical field [0001] The present invention relates generally to the field of semiconductor processing, and more particularly to apparatus and methods for supporting, positioning or rotating substrates in processing chambers during the production of semiconductor devices. Background technique [0002] In integrated circuit and display production, semiconductor, dielectric and conductive materials are formed on substrates such as silicon or glass. Materials can be formed using chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), ion implantation, plasma or thermal oxidation and nitridation processes. The deposited material is then etched to form features such as gates, vias, contacts, and interconnects. In a typical deposition or etch process, a substrate is exposed to a plasma in a substrate processing chamber to deposit or etch material on the surface of the substrate. Other typical processes performed on the substrate include ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/687H01L21/205H01L21/324
CPCH01L21/6838H01L21/68792H01L21/68785H01L21/67115H01L21/68742
Inventor 布莱克·凯尔梅尔亚历山大·N·勒纳约瑟夫·M·拉内什凯达尔纳什·桑格姆库赫斯特·索瑞伯基
Owner APPLIED MATERIALS INC
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