The application provides a
mask plate and a calibration method of a photoetching
machine. The measurement mark on the
mask plate comprises a first pattern and a second pattern, the first pattern and the second pattern have a
common point, and the first pattern and the second pattern are provided with scale patterns. In the calibration process, the standard photoetching
machine is taken as a reference, the measurement mark is exposed on the standard photoetching
machine and the photoetching machine to be calibrated respectively, the deviation of the
common point is directly read and the parameter is corrected, the calibration of the field center is realized, the error of the
exposure field size and the
wafer placement error can be obtained through
direct reading and calculation. The measurement mark can not only obtain the two-degree-of-freedom position deviation, but also obtain the rotation deviation, and the
measurement precision of the
wafer placement error is improved. In addition, the photoetching machine to be calibrated can be taken as a reference datum, and the
relative displacement of the
wafer placement under different wafer placement angles can be calibrated. Therefore, the application not only improves the calibration efficiency and guarantees the precision of photoetching, but also has diversified application scenes, good universality and wide application range.