The invention belongs to the technical field of LED epitaxial structures, and particularly relates to a blue-green dual-
wavelength epitaxial growth method and structure, and the growth method comprises the steps: patterning a substrate, carrying out the first filling, then growing
green light MQW and NGaN, carrying out the second patterning, forming a multi-layer gradient structure, carrying out the ALN
coating, carrying out the second epitaxial filling, then growing
blue light MQW, and carrying out the P Side. According to the invention, the smooth transition of the
refractive index is realized by carrying out secondary patterning and a multi-layer gradual change structure after
green light MQW; through the design of the stress buffer layer, the difference of
thermal expansion coefficients of two times of
epitaxy is matched, and the
blue light MQW is grown, so that the problem of poor
material quality after the first time of
green light MQW growth can be effectively improved; due to the double-layer
graphical design, the light extraction efficiency of the
blue light is improved, and the luminance of the green light MQW is excited; the second layer of
graphical design is carried out on the NGaN, and due to the fact that the pattern is etched on the GaN material, the designed pattern is ultra-large in height and width and does not affect the growth quality of the subsequent material, and the propagation direction of light can be more effectively changed through a large
pyramid structure.