83 results about "Laser bonding" patented technology

The invention discloses a plasma surface activation pre-bonding-femtosecond laser connection integrated process, belongs to the technical field of advanced dissimilar material precision connection, and particularly relates to a multi-material interface efficient connection method based on plasma surface activation pre-bonding and femtosecond laser processing. The method is suitable for high-strength and low-thermal-damage heterogeneous bonding of transparent materials (such as glass, quartz and sapphire) and transparent materials or metal materials (such as titanium alloy, stainless steel and invar alloy). According to the method, interface atomic-scale cleaning and chemical activity regulation and control are achieved through plasma activation, interface connection of the two materials is induced by combining the femtosecond laser ultrafast nonlinear effect, and the bottlenecks that in a traditional connection technology, optical contact depends on a mechanical clamp, and heat input is uncontrollable are broken through; and an innovative solution is provided for cross-material interface functional manufacturing in the fields of photoelectric device packaging, optical-electronic integrated systems and the like.

The invention relates to a laser cutting-off technology, in particular to a laser bonding wire cutting-off device for chip detection, which comprises a workbench and the like, a fixed block is arranged above the workbench, and the fixed block moves through a first linear module mounted on the top surface of the workbench; a laser cutting device used for cutting off a welding wire is installed on the fixing block, and a datum plate is fixedly connected to the top face of the fixing block. The laser cutting device is provided with wiping blocks and other parts, the vertical positions of the wiping blocks are adjusted through the adjusting part, so that one wiping block can make contact with the bottom face of the lens of the laser cutting device, and when tiny impurities or dust on the lens of the laser cutting device needs to be wiped, the second linear module is started; the second linear module drives the moving block to move, so that one wiping block can wipe the lens of the laser cutting device, wiping can be completed in a laser cutting gap, manual wiping is not needed after each time of use, and time and manpower resources are saved.

The invention relates to the technical field of laser bonding, in particular to a precise-displacement laser bonding method, system, device, equipment and medium, and the method comprises the steps: fixing to-be-bonded samples based on an adsorption jig, the to-be-bonded samples including a first to-be-bonded sample and a second to-be-bonded sample; based on visual alignment, controlling the first to-be-bonded sample and the second to-be-bonded sample to carry out alignment lamination; controlling a height measurement laser emitter to emit height measurement laser to the alignment surface of the to-be-bonded sample; identifying reflected laser for height measurement, and calculating the fitting height of the to-be-bonded sample at the current reflection point position based on the reflected laser; and controlling a piezoelectric ceramic displacement sensor to move an optical element based on the lamination height, adjusting the position of a laser focus of bonding laser, and carrying out laser bonding on the to-be-bonded sample. According to the invention, the welding error caused by the uneven surface of the to-be-bonded sample or the material thickness change in the laser bonding process can be reduced.

The invention aims to provide a capacitance thin film vacuum gauge and a preparation method thereof, and belongs to the technical field of semiconductor manufacturing, the capacitance thin film vacuum gauge is resistant to high temperature and corrosion, in the process manufacturing stage, a room temperature laser bonding technology and a direct bonding technology for materials such as single crystal silicon carbide under vacuum high temperature and high pressure conditions are combined, and the capacitance thin film vacuum gauge is obtained. The connection problem of three layers of structures of high-temperature-resistant and corrosion-resistant transparent single crystal materials such as silicon carbide is completed, the problem of failure of metal under the high-temperature bonding condition of the single crystal materials is avoided, and meanwhile the vacuum degree and the bonding strength of a vacuum cavity and the stability of a vacuum gauge are guaranteed.

A method of laser bonding glass to metal foil includes contacting a first glass substrate with a first metal foil to create a first contact location; directing a laser beam on the first contact location to bond the first glass substrate to the first metal foil; contacting a second glass substrate with a second metal foil to create a second contact location; and directing the laser beam on the second contact location to bond the second glass substrate to the second metal foil, wherein the first metal foil and the second metal foil each have a thickness from 5 μm to 100 μm, and wherein the laser beam comprises a pulsed laser comprising: a pulse energy from 2.8 μJ to 1000 μJ; and a wavelength such that the first and second glass substrates are substantially transparent to the wavelength.

The invention relates to a laser bonding interconnection process, which comprises the following steps of: 1, selecting a substrate and a chip with a certain specification, cleaning the substrate and the chip, and then pre-treating the substrate and the chip; step 2, using a chip absorption and laser emission integrated device with a light-transmitting and high-temperature-resistant material to absorb a chip from the right above, placing an interconnection material between the chip and the substrate as an interconnection layer, and aligning the chip and the substrate to form an interconnection structure of the chip, the interconnection material and the substrate; thirdly, protective gas is introduced, proper laser parameters are selected through the device, pressure and ultrasound are applied, and the welding time is controlled to weld the interconnection structure; and step 4, cooling at room temperature to obtain the interconnection structure. Comprising fine pitch interconnection and chip die bonding, realizes interconnection with better performance, higher efficiency and lower cost, meets advanced packaging requirements, and is used for solving the technical problems.

A method of bonding glass to a material includes contacting a first surface of a glass substrate with a first surface of a layer to form a contact location between the glass substrate and the layer; disposing an optical element optically upstream of the glass substrate; and performing a welding step by directing a laser beam onto the optical element such that the laser beam contacts the optical element, passes through the glass substrate at an oblique angle with respect to the glass substrate, and contacts the contact location to bond the glass substrate with the layer. Directing the laser beam onto the optical element imparts a wavefront aberration effect to the optical element. The laser beam is passed through the glass substrate to impart a wavefront aberration effect to the substrate. The wavefront aberration effect of the optical element counteracts the wavefront aberration effect of the substrate.

Various embodiments of a hermetic assembly and a method of forming such assembly are disclosed. The hermetic assembly includes a dielectric substrate having a first major surface and a second major surface, a patterned layer connected to the first major surface of the dielectric substrate by a laser bond, and a ferrule having a body and a flange extending from the body. The flange is welded to a welding portion of the patterned layer that is disposed between the flange and the first major surface of the dielectric substrate such that the ferrule is hermetically sealed to the dielectric substrate.

The invention discloses a laser bonding and de-bonding method and a laser bonding and de-bonding system for diamond and glass. According to the method, ultrafast laser penetrates through glass and is focused on a diamond-glass contact surface, so that the glass is locally melted and sprayed out to fill a gap, and high-strength bonding (the shearing strength reaches 14.1 MPa) is realized; during de-bonding, long-pulse laser is adopted to induce microcracks in a bonding area to form a modified surface, and lossless separation is realized through mechanical force. The method has the following advantages: (1) non-contact bonding can be realized when the gap is greater than or equal to 3 microns; (2) glass is selectively melted, and diamond damage is avoided; (3) no middle layer exists, and the intrinsic performance of the material is kept; and (4) the bonding / debonding is reversible, and the process is controllable. The matching system comprises an ultrafast laser, a long pulse laser, a precision motion platform and a computer control system, and can realize efficient connection and separation of diamond and various types of glass. The method is suitable for the high-end manufacturing fields of large-size diamond wafer preparation, optical device packaging and the like.

An implantable device (1) is provided comprising a housing (2), an electronic or electrical component (4) and at least one antenna (8), wherein the housing (2) is formed by at least two non-metallic substrates (10, 20, 22) which are bonded by means of a laser bonding process, wherein at least one of the non-metallic substrates (10, 20, 22) is a glass substrate (10) and has at least one electrical feed-through configured as a through glass via (30) comprising a conductive rod (32) electrically connecting the inside of the housing (2) to the outside through said glass substrate (10). The conductive rod (32) of the at least one through glass via (30), the at least one electronic or electrical component (4) and the at least one antenna (8) are configured and arranged such that the implantable device (1) has an interference volume I within which a relative change (I) of an MRI signal frequency (II) relative to the frequency of an undisturbed signal (III) caused by the presence of the implantable device (1) is more than 1 x 10-6, a ratio m of the interference volume I to a volume V of the implantable device I / V being less than 40.

The invention relates to silicon optical chip laser bonding equipment which comprises a marble table board, and a feeding belt conveying belt, a discharging belt conveying belt, a welding mechanism and a feeding and discharging mechanism are arranged on the marble table board. A feeding belt conveying belt and a discharging belt conveying belt are sequentially installed at the front end of the marble table top from left to right, a welding mechanism is arranged in the middle of the rear end of the marble table top, a jig platform is arranged on the portion, in front of the welding mechanism, of the marble table top, and a feeding and discharging mechanism is arranged above the jig platform. According to the invention, laser is adopted as a heat source, a traditional reflow soldering process is replaced, and the problem of metallurgical bonding form variation caused by non-uniform heat due to temperature difference during silicon chip bonding can be solved.

Methods for laser bonding optical elements to substrates and optical assemblies are disclosed. According to one embodiment, a method of bonding an optical element to a substrate includes disposing at least one optical element onto a surface of the substrate, electrostatically affixing the at least one optical element to the surface of the substrate, and directing a laser beam into the at least one optical element. The laser beam heats an interface between at least one optical element and the substrate to a temperature that is higher than a lowest temperature of the optical element change temperature and the substrate change temperature, thereby forming a bond between at least one optical element and the substrate at a bond area. The laser beam has a fluence that does not modify the substrate at areas of the substrate that are outside of the at least one optical element.

A method for designing a laser weld between a base substrate (10) and a cover substrate (14) of an enclosure (1) is proposed, wherein the base substrate (10) has a functional area (20), and the cover substrate (14), which is in contact with the base substrate (10), covers the functional area (20), wherein the base substrate (10) and the cover substrate (14) are directly and hermetically bonded to each other via at least one laser bond line (2), so that the functional area (20) is hermetically enclosed inside the formed enclosure (1). It is provided that a minimum shear force F is required for the bond between the cover substrate (14) and the base substrate (10). min The minimum length L that the laser welding is supposed to withstand is specified by an empirically determined force per laser bond line length P. minfor the total length of all bond lines (2) is determined and a contact area width B is chosen such that a ratio A i / A w formed from a contact surface A i , where the base substrate (10) and the cover substrate (14) can touch, and a laser bonding area A swept over by the laser bonding lines (2) with a width w w in the range of 1 to 10. Further aspects of the invention relate to such an enclosure (1) and a sensor unit and / or medical implant comprising such an enclosure (1).

Bonding tool for laser bonding, in particular for TAB bonding, which has a tool body with a tool tip which has a component support surface, wherein the tool body has orientation adaptation means for adapting a spatial orientation of the component support surface to different spatial orientations of a component surface such that the component support surface of the bonding tool is brought substantially completely and uniformly into contact with a bond piece resting on the component surface.

The invention provides a paying-off method and system for a semiconductor laser bonding wire, and belongs to the technical field of semiconductor laser bonding wire, and the method comprises the steps: winding a gold wire on a wire shaft, and fixing the gold wire on a paying-off motor; nitrogen is introduced to form airflow to blow up the gold wire to keep the gold wire in a suspended state; the sensor detects that the gold wire enters the detection area in real time; the PLC module controls the pay-off motor to rotate anticlockwise to pay off the gold wire with the specified length The airflow blows the gold wire away from the detection area of the sensor; when the inductor detects that no gold wire exists, the PLC is triggered to stop paying off, and the gold wire stably enters the welding device. According to the method, through precise cooperative control of the airflow and the inductor, it is ensured that the gold wire keeps a stable suspension track in the paying-off process, breakage, deviation and position deviation of the gold wire are effectively avoided, the wire welding precision, the production efficiency and the product yield are improved, and reliable guarantee is provided for high-quality wire welding operation of the semiconductor laser.

The invention relates to an enclosure for encapsulating a functional region from the surrounding area, wherein the enclosure comprises a base substrate and a cover substrate, and the base substrate together with the cover substrate forms at least one part of the enclosure or the enclosure. The invention additionally relates to the at least one functional region arranged in the enclosure and to a locking device for reducing permeation between the enclosure and the functional region. The enclosure can have at least one laser bonding line, and the substrates of the enclosure can be joined together in a hermetically sealed manner by means of the at least one laser bonding line. The laser bonding line has a height (HL) perpendicular to the connection plane thereof.

The present invention relates to an apparatus and a method for bonding different materials without damage to a lower base material by using laser irradiation heat and a filler (solder or brazing) for bonding different materials during the manufacture of battery packs. The apparatus for bonding different materials, according to an embodiment of the present invention, comprises: an upper base material arrangement unit for arranging an upper base material at a bonding position; a lower base material arrangement unit for arranging, in an overlapped manner, such that the bonding position of the lower base material faces the bonding position of the upper base material; a bonding material injection unit for injecting, between the upper base material and the lower base material, a bonding material to be melted by conduction heat generated when the upper base material is heated; and a laser irradiation unit for heating the upper base material by irradiating the upper surface of the upper base material with a laser.

The invention discloses an MEMS ionization vacuum sensor based on magnetic field assistance and a manufacturing method thereof, and belongs to the technical field of microelectronics. The sensor comprises a glass substrate, an emitter electrode, a lead electrode, an electron emitter, a first insulating spacer layer, a grid electrode, a second insulating spacer layer, top glass, an ion deflection electrode, an ion collector, an annular electrode and a magnetic field generation part, the manufacturing method comprises the steps of preparation of the substrate and the top glass, bonding of the electron emitter, processing of the insulating spacer layer and the grid electrode, anodic bonding, laser bonding, installation of the magnetic field component and scribing. An electric field-magnetic field composite field is used for remarkably expanding the electron motion trail, the problems that an existing sensor is weak in ion flow and poor in anti-interference capacity are solved by combining the physical isolation design of an ionization and collection area, and the sensor has the advantages of being small in size, high in precision, good in consistency and low in cost and is suitable for the fields of semiconductor manufacturing and aerospace.

The utility model relates to a silicon optical chip laser bonding device which comprises a marble table top, and a feeding belt conveying belt, a discharging belt conveying belt, a welding mechanism and a feeding and discharging mechanism are arranged on the marble table top. A feeding belt conveying belt and a discharging belt conveying belt are sequentially installed at the front end of the marble table top from left to right, a welding mechanism is arranged in the middle of the rear end of the marble table top, a jig platform is arranged on the portion, in front of the welding mechanism, of the marble table top, and a feeding and discharging mechanism is arranged above the jig platform. According to the utility model, laser is adopted as a heat source, a traditional reflow soldering process is replaced, and the problem that the metallurgical bonding form varies due to non-uniform heat caused by temperature difference during silicon chip bonding can be solved.

A hermetic connection assembly is shown, which comprises a first substrate, which is at least in some areas and / or at least partially made transparent for at least one wavelength range, a metal foil, which is arranged so as to have a contact area 5 adjacent to the contact area of ​​the first substrate, and at least one laser bond line or a number of bond points for directly and without mediation bonding the metal foil to the first substrate on or in the contact area. The laser bond line or the number of bond points penetrates into the first substrate on the one hand and into the metal foil on the other hand and directly bonds the two bonding partners to each other by melting. Here, the metal foil is prepared to be flexible so that irregularities in the contact area of ​​the first substrate can be flattened.

The invention discloses a Cf / SiC composite material and metal laser connection method based on surface energy beam treatment, and belongs to the technical field of heterogeneous material connection. The method comprises the following steps: firstly, treating the surface of the Cf / SiC composite material by adopting laser or an electric arc, controlling laser power / electric arc current and scanning speed, ablating a SiC matrix and reserving C fibers to form a convex surface structure of the C fibers, and then preparing the composite material by taking Ti and Ta pure metal or a high-melting-point alloy consisting of the two metal elements as a filling material, and carrying out laser welding on the Cf / SiC composite material subjected to surface treatment and metal under an inert gas shielded welding condition. The surface energy beam treatment method is simple in process and good in flexibility, a'fiber pinning 'interface structure can be obtained, and the bonding strength of a connecting interface can be improved. Local heating of laser welding has little influence on the overall structure / performance of the metal base material, and high-temperature-resistant connection between the Cf / SiC composite material and the metal can be achieved conveniently; and laser welding is good in flexibility and high in efficiency, connection can be achieved in an open environment, and the size of a weldment is not limited.

The invention provides a manufacturing method for mass transfer of an MIP. The manufacturing method comprises the steps of reverse mold blue film, glass support plate double-glue coating and wafer fixing, glass support plate and BT plate alignment and reflow soldering, cutting and post-processing. According to the blue film expansion technology, efficient adjustment of wafer spacing is realized through an asymmetric film expansion ring and a dynamic calibration system, and the cost is reduced; the adhesive layer A provides optical transparency and temporary fixation, and the adhesive layer B shields light and locks the posture of the wafer to replace injection molding; solder paste reflow soldering: pre-plating an eutectic solder pad for direct bonding, and combining surface tension self-correction of an A adhesive layer and wafer deviation rate; and process integration: laser bonding and injection molding procedures are omitted, and the process is shortened.

In an embodiment, a laser bonding assembly includes a glass structure, a metal foil, and a first cover glass. The glass structure includes a first glass substrate defining a first major surface and a second glass substrate defining a second major surface opposite the first major surface. The glass structure further includes a peripheral edge extending about a periphery thereof between the first major surface and the second major surface. The laser bonding assembly further includes a metal foil configured to surround the peripheral edge. The metal foil is connected to the glass structure via a foil-glass laser bond. The laser bonding assembly further includes a first cover glass connected to the glass structure and / or the metal foil. The laser bonding assembly further includes a frame disposed adjacent to the first cover glass. The glass structure and the metal foil are at least partially surrounded by the frame and the first cover glass.

This thin film for semiconductor laser bonding has a solder layer that contains 7.2-14.0 wt% Au, 0.1-4.4 wt% Ag, and 0.1-10.1 wt% Cu, with the remainder excluding unavoidable impurities being Sn.

A base substrate of an enclosure has a functional region and a cover substrate covers the functional region. The base substrate and cover substrate are directly connected together in a hermetically tight manner via at least one laser bonding line so the functional region is hermetically enclosed in the enclosure. For the connection between the substrates a minimum shear force is specified that the laser weld connection is to withstand, a minimum length is determined, by an empirically determined force per laser bonding line length P, for the total length of all bonding lines, and a contact surface width B is selected such that a ratio Ai / Aw, formed from a contact surface Ai, at which the base substrate and the cover substrate can touch one another, and a laser bonding surface Aw covered by the laser bonding lines with a width w, is in the range from 1 to 10.

A laser control structure and a laser bonding method using the same are provided. The laser bonding method includes forming a bonding portion on a substrate; disposing a bonding object on the bonding portion; disposing a laser control structure on the bonding object or the substrate; irradiating the bonding object and the bonding portion with laser light; controlling an amount of the laser light absorbed by the laser control structure; heating the bonding portion and the bonding object to a bonding temperature using the controlled amount of the laser light; and bonding the bonding portion with the bonding object. The laser control structure includes a first substrate including a first region and a second region; a first thin film laminate on the first region; and a second thin film laminate on the second region. The first thin film laminate includes at least one first thin film layer and at least one second thin film layer; the second thin film laminate includes at least one third thin film layer and at least one fourth thin film layer; and the first thin film laminate and the second thin film laminate have different reflectivity or absorptivity.

The invention provides a laser bonding structure based on a nonmetal inorganic material and a de-bonding method, and relates to the technical field of semiconductors. The laser bonding structure comprises a first stacking piece, a second stacking piece and a de-bonding layer, wherein the de-bonding layer is arranged between the first stacking piece and the second stacking piece; the material characteristics of the first stacked sheet include allowing laser of a target wavelength to pass through; the material characteristic of the de-bonding layer comprises a non-metal inorganic material, and the de-bonding layer has an absorption peak on the laser at the target wavelength. According to the laser bonding structure, the stacking sheet is used as a temporary carrier, and the inorganic non-metal material is used as a de-bonding layer material, so that the fragment risk can be reduced, and the environmental protection problem of chemical corrosion can be solved.

To provide a bonding device capable of removing deposits attached to a biasing member located at the rear in the direction of movement of the workpiece heating section. [Solution] The laser bonding apparatus 1 comprises a workpiece heating unit 100, a forward biasing member 200F, a rear biasing member 200R, and a rear cleaning unit 300R for cleaning the rear biasing member. The rear biasing member 200R includes a biasing unit 210 capable of applying biasing force to workpieces W1 and W2, a support 220 connected to the biasing unit, and a rotating pressing body 230 supported by the support so as to be rotatable relative to the support, which presses the workpiece. The rear cleaning unit 300R removes any deposits adhering to the surface of the rotating pressing body 230.

The utility model discloses a crystal grain support plate installation tool and a laser bonding device, a support is provided with a through hole, an adsorption plate covers the through hole, the adsorption plate can be exposed from the through hole, the adsorption plate is provided with a plurality of adsorption holes, and each adsorption hole can adsorb a crystal grain support plate on the adsorption plate. As the output end of the light path adjusting part faces the adsorption plate, and the adsorption plate is a light-transmitting plate, the light path adjusting part is aligned with the crystal grains, and the laser reaches the crystal grains through the adsorption plate, so that the crystal grains are bonded on the carrier plate. Laser can penetrate through the whole adsorption plate, large-area bonding is facilitated, the adsorption plate directly adsorbs the carrier plate, the carrier plate with a larger area can be machined, the area of a machinable area is greatly increased, and the machining efficiency is improved. And in the subsequent pressing process, the adsorption plate can uniformly abut against each crystal grain on the carrier plate, so that the flatness of the pressed carrier plate is ensured.

A method of laser bonding glass to metal foil includes contacting a first glass substrate with a first metal foil to create a first contact location; directing a laser beam on the first contact location to bond the first glass substrate to the first metal foil; contacting a second glass substrate with a second metal foil to create a second contact location; and directing the laser beam on the second contact location to bond the second glass substrate to the second metal foil, wherein the first metal foil and the second metal foil each have a thickness from 5 μm to 100 μm, and wherein the laser beam comprises a pulsed laser comprising: a pulse energy from 2.8 μJ to 1000 μJ; and a wavelength such that the first and second glass substrates are substantially transparent to the wavelength.