The invention discloses an MEMS
ionization vacuum sensor based on
magnetic field assistance and a manufacturing method thereof, and belongs to the technical field of
microelectronics. The sensor comprises a glass substrate, an emitter
electrode, a
lead electrode, an
electron emitter, a first insulating spacer layer, a grid
electrode, a second insulating spacer layer, top glass, an
ion deflection
electrode, an
ion collector, an annular electrode and a
magnetic field generation part, the manufacturing method comprises the steps of preparation of the substrate and the top glass, bonding of the
electron emitter,
processing of the insulating spacer layer and the grid electrode,
anodic bonding,
laser bonding, installation of the
magnetic field component and scribing. An
electric field-magnetic field
composite field is used for remarkably expanding the
electron motion trail, the problems that an existing sensor is weak in
ion flow and poor in anti-interference capacity are solved by combining the physical isolation design of an
ionization and collection area, and the sensor has the advantages of being small in size, high in precision, good in consistency and low in cost and is suitable for the fields of
semiconductor manufacturing and
aerospace.