29 results about "Flat band" patented technology

This invention relates to a dual-core metal carrier with variable-diameter wavebands and its manufacturing method, comprising a variable-diameter waveband and standard wavebands. The variable-diameter waveband includes a low-wave-height segment and a high-wave-height segment. Several layers of standard wavebands are disposed on at least one side of the low-wave-height segment of the variable-diameter waveband. The low-wave-height segment and the standard wavebands, as well as two layers of standard wavebands, are separated by short flat bands. The wave-height value of the high-wave-height segment is equal to the sum of the wave-height value of the low-wave-height segment and the wave-height values ​​of the several standard wavebands disposed on the low-wave-height segment side. One variable-diameter waveband and several layers of standard wavebands constitute a waveband unit. Adjacent waveband units are separated by long flat bands. Several layers of waveband units are rolled to form a metal carrier. The dual-core metal carrier with variable-diameter wavebands and its manufacturing method improve the problem of high back pressure of the carrier, reduce material costs, realize product diversification, and improve the thermal vibration resistance and thermal shock resistance of the metal carrier.

The invention provides a mobility separation method and device for a core-shell structure junctionless transistor, and the method comprises the steps: obtaining a first relation curve of drain current-gate voltage and a second relation curve of gate channel capacitance-gate voltage, determining first gate voltage when a core layer in the core-shell structure junctionless transistor is in a flat band based on the second relation curve, and separating the mobility of the core-shell structure junctionless transistor from the first gate voltage. In the first relation curve, determining the drain current corresponding to the grid voltage as the first grid voltage as the first current in the core layer, and according to the first relation curve and the first current, determining the second current in the shell layer of the junction-free transistor with the core-shell structure. And according to the second current, the transconductance of the second current to the gate voltage, the gate voltage and the first gate voltage, determining the first mobility of the shell layer in the core-shell structure junctionless transistor. In short, the current in the single channel is separated from the total current, and then the mobility corresponding to the channel is determined based on the current in the single channel, so that accurate characterization of the mobility of each channel is realized.

The application belongs to the technical field of semiconductor testing and relates to a semiconductor epitaxial layer resistivity measuring device and method. The measuring device comprises a sample table for placing a sample to be measured, a pretreatment unit for stabilizing the surface charge of the sample to be measured and a measuring unit for detecting the resistivity of the sample to be measured. The pretreatment unit comprises a second electrode and a first voltage source. The second electrode is connected to the front surface of the sample to be measured. The first voltage source forms a first closed loop with the second electrode and a first electrode on the back surface of the sample to be measured. The first voltage source provides a first voltage to the second electrode. The pretreatment unit provided in the application directly stabilizes the surface charge of the sample to be measured by actively applying an electric field, greatly improves the repeatability of CV measurement, effectively suppresses the flat-band voltage drift phenomenon and thus obtains more real and accurate resistivity values of the sample to be measured.

The invention relates to a SiC MOSFET gate oxide degradation comprehensive diagnosis method and system, and the method comprises the steps: constructing a data set, and training to obtain a junction temperature estimation function; acquiring an actual precursor parameter under an actual operation condition through a measuring circuit, substituting the actual precursor parameter into a junction temperature estimation function to obtain a current actual junction temperature estimation value, and substituting the current actual junction temperature estimation value into a linear relation between the precursor parameter and the junction temperature before degradation of the gate oxide layer to obtain a junction temperature estimation value; obtaining a flat-band voltage and a threshold voltage when the gate oxide layer is not degraded at the junction temperature; and calculating a difference value between the actual precursor parameter and the precursor parameter when the gate oxide layer is not degraded at the junction temperature to obtain a precursor parameter drift distance, and carrying out gate oxide layer degradation comprehensive diagnosis according to the precursor parameter drift distance to obtain a comprehensive diagnosis result. According to the invention, the problem of misdiagnosis caused by temperature excursion in the prior art is solved, the accuracy and robustness of degradation diagnosis are improved, and real-time monitoring and thermal state management of the working junction temperature state of the device are realized.

This invention discloses a narrowband polarization metasurface for suppressing long-wave infrared angular dispersion and its fabrication method, relating to the field of optical component technology. Addressing the problems of difficult fabrication and strong angular dispersion inherent in existing polarizers, the metasurface of this invention comprises a barium fluoride substrate and a double-layer composite grating structure disposed on its surface. The composite grating includes a bottom arsenic selenide grating and a top metal layer. By limiting the period of the composite grating to 5.5-6.25 micrometers and the width of a single double-layer grating structure to 4.5-5.5 micrometers, the downward-leaking guided modes and Fabry-Perot cavity modes within the structure undergo strong compression in momentum space, resulting in band folding and anti-crossing flat-band effects. This invention not only relaxes the feature size to the micrometer level, significantly reducing fabrication difficulty, but also fundamentally suppresses the strong angular dispersion of plasmon resonance in narrowband, achieving a high polarization extinction ratio under large angle tolerance and greatly reducing the collimation requirements of practical optical paths.

The application discloses a Kagome photonic crystal, belongs to the technical field of lasers, and is used for constructing a topological laser, wherein the Kagome photonic crystal comprises a plurality of supercells, each supercell comprises three hexapole cavities, and the plurality of supercells are periodically arranged along a first direction and a second direction, so that all the hexapole cavities form a Kagome lattice structure as a whole. The technical scheme provided by the application constructs a Kagome supercell through the hexapole cavities, the momentum space of the Kagome lattice has a flat-band energy band with close-to-zero dispersion, the photon group velocity in the flat band tends to be zero, the interaction between light and matter is enhanced, and the Kagome photonic crystal has a natural advantage of constructing a two-dimensional topological laser. Through design of lattice parameters, a single light field mode that can be adjusted and controlled appears in a forbidden band, the band edge mode competition problem of a traditional semiconductor laser is effectively inhibited, and a stable single-mode laser with a high quality factor is obtained.

Apparatus is described for performing simultaneous corona deposition and surface electric field induced second harmonic (EFISH) measurements. Example designs include systems including corona guns having a focus tube for deposition of corona charge with windows therein for passage of a laser beam incident on and reflected from a sample surface. Various designs may also employ masks proximal the distal end of the focusing tube and / or proximal the sample surface. In some implementations, the apparatus is used to make ungrounded and therefore non-invasive measurements, for example, on dielectric on semiconductor such as, e.g., interface state density (Dit), flatband voltage (Vfb) and / or lifetime measurements.

The invention provides a watchband adsorbing and transferring device, and belongs to the field of transferring of 3C parts, the device comprises a sucker plate, a plurality of band body suction nozzle units, a band end suction nozzle unit and a driving module, the band end suction nozzle unit adopts a long groove type suction nozzle or a plurality of side-by-side circular suction nozzles, and is used for adsorbing and picking up wider band ends of watchbands; according to the device, a suction nozzle lifting self-driver or a suction nozzle unit is installed on different suction nozzle plates, and non-flat belts are picked up; the device can well adapt to adsorption and pickup of band ends and non-flat bands, and is convenient to popularize and apply in the fields of watchband detection, devices and processing of smart watches.

The invention provides an AlOx P-type dipole MOS device and a preparation method thereof, the AlOx P-type dipole MOS device comprises a P-type silicon substrate, a SiO2 thin film, a HfO2 thin film, an AlOx thin film, a TiN thin film and a W thin film which are arranged from bottom to top, a Ni thin film is deposited on the back surface of a silicon wafer of the P-type silicon substrate, after an ultrathin AlOx dipole layer is deposited on the HfO2 thin film, the SiO2 thin film, the HfO2 thin film and the AlOx thin film are grown in situ in a whole process by adopting an ALD process through ultra-short-time high-temperature annealing, and the W thin film is deposited on the back surface of a silicon wafer of the W thin film. Flat-band voltage regulation and control of the MOS device are achieved through fire driving, Al is diffused into HfO2 after driving annealing, a dipole is formed on a High k / SiO2 interface layer, the local chemical environment and charge distribution at the interface are changed, and therefore a fixed electric dipole layer is formed.

The utility model provides a kind of flat band downer, including connecting frame, cam installed on connecting frame and control the knob of falling, the cam is equipped with first pass through the channel for flat band and the second pass through the channel located in the side of first pass through the channel, the cam is equipped with the transition mouth of the communication first pass through the channel and second pass through the channel relative to one end of knob, the connecting frame bottom end is connected with pivot joint axle, pivot joint axle is pivoted with connecting block, the connecting block is equipped with with cam cooperation to flat band generates extrusion, realize the stop block of downer stop, the knob is connected in the end opposite stop block in connecting frame by fixed shaft, the knob is swung relative to pivot joint axle by connecting frame control cam, realize downer falls.The utility model is convenient for falling and can be applied to flat band.

This invention provides an AlO x P-type dipole MOS device and its fabrication method, including a bottom-up arrangement of a P-type silicon substrate, a SiO2 thin film, an HfO2 thin film, and an AlO2 thin film. x Thin films, TiN thin films, and W thin films, with Ni thin films deposited on the back side of the P-type silicon substrate, and ultrathin AlO films deposited on HfO2 thin films. x After the dipole layer, SiO2 thin films, HfO2 thin films, and AlO2 thin films are grown in situ using the ALD process through an ultra-short time high temperature annealing process. x Thin film, and fire-driven annealing realizes flat-band voltage regulation of MOS device. After driving annealing, Al diffuses into HfO2 and forms a dipole in the High k / SiO2 interface layer, which changes the local chemical environment and charge distribution at the interface, thereby forming a fixed electric dipole layer.

The invention relates to a coil spring box, comprising a stationary stator housing part and a rotatable rotor housing part, between which a winding gap is formed, in which a flexible flat cable having an electrical conductor and a flexible flat tape are arranged in such a way, the flat cable and the flat belt are wound in opposite directions in such a way that respective first sections of the flat cable and the flat belt abut against the inner side surface of the stator housing part and respective second sections of the flat cable and the flat belt abut against the outer side surface of the rotor housing part. According to the invention, the flat cable and the flat belt are arranged in the rotor housing part such that a U-shaped deflection section which reverses the winding direction is formed between the respective two sections of the flat cable and the flat belt, characterized in that the flat belt is designed as a thin steel belt, and the permanent magnets are mounted in the region of the outer side surface of the rotor housing part such that the flat cable and the flat belt can be wound around the rotor housing part. A suction effect is generated on the section of the flat belt which is attached to the section of the flat belt.

The invention relates to the technical field of integrated photonic devices and laser radiation regulation and control, in particular to a far-field directional tunable laser based on a magneto-optical medium and an optical flat band and a method of the far-field directional tunable laser based on the magneto-optical medium and the optical flat band. The dielectric layer is used for providing negative dielectric response and providing non-reciprocal optical response under the action of an external magnetic field; the silicon waveguide layer is deposited on the magneto-optical medium substrate layer, gain medium areas are discontinuously embedded in the silicon waveguide layer in the axial direction, and the silicon waveguide layer is used for providing the energy flow direction opposite to the magneto-optical substrate; and the transparent conductive oxide covering layer covers the silicon waveguide layer and the gain medium region and is used for adjusting the optical environment of the upper cladding. A remarkable nonreciprocal characteristic is shown under the action of an external magnetic field, a dispersion curve can be overturned by changing the direction of the magnetic field, then the far-field radiation direction of laser is driven to deflect, and dynamic regulation and control of the laser direction can be achieved without mechanical parts.

Various embodiments may relate to a laser cavity. The laser cavity may include a substrate, a contact layer in contact with the substrate, and an active layer in contact with the contact layer. The active layer may include a lattice including a plurality of hexagonal cells, and a plurality of daisy-like holes, each of the plurality of daisy-like holes including six air bulges aligned substantially with corners of a respective hexagonal cell of the plurality of hexagonal cells such that the laser cavity achieves flat-band bound states in continuum (BIC). The laser cavity may additionally include a cladding layer on a portion of the active layer, a first electrode, and a second electrode such that the substrate, the contact layer, the cladding layer and the active layer are between the first electrode and the second electrode.

The application provides a semiconductor laser element with a built-in topological flat band layer, and relates to the technical field of semiconductor optoelectronic devices, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper confinement layer, and a topological flat band layer arranged between the upper waveguide layer and the electron blocking layer; the topological flat band layer is any one or any combination of KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4 and Ca2NCl; the topological flat band layer has unique magnetic and superconducting properties, has flat band orbital characteristics and quasi-planar energy band hybridization, forms a stable closed ring Dirac nodal line which is not easy to be destroyed, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances mode gain, and at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, and reduces internal optical loss, so as to strengthen the stimulated emission of the laser element, and improve the lasing power and slope efficiency of the laser element.

The application discloses a grating design method and system of an optical coupler, and belongs to the technical field of AR optical display. The method comprises the following steps: obtaining a noise vector to be modulated based on a working wavelength of an optical coupler to be designed; and obtaining a target grating based on the noise vector to be modulated, a pre-trained grating mapping model and a pre-trained grating optimization model. The training process of the pre-trained grating mapping model comprises the following steps: obtaining a plurality of historical noise vectors based on the optical coupler at a plurality of preset working wavelengths; updating a preset initial mapping model based on the plurality of historical noise vectors; obtaining a mapping training index and a training mapping model; if a preset condition is not met, updating the training mapping model and re-executing the training process until a preset training end condition is met, and taking the training mapping model as the pre-trained grating mapping. The grating design method of the optical coupler can perform multi-angle flat-band joint optimization on the grating of the optical coupler.

A yaw-bearing grease tray for a wind turbine. The yaw-bearing grease tray includes an arcuate flat band portion with an inner arcuate sidewall, an outer arcuate sidewall, a first end wall and a second end wall which are perpendicular and disposed on the arcuate flat band portion. The yaw-bearing grease tray includes a ledge formed on the first end wall to be substantially parallel to the arcuate flat band portion and a step formed at the second end wall to be substantially parallel to the arcuate flat band portion. A plurality of magnets are disposed on the arcuate flat band portion to magnetically couple with yaw-bearing bolts and yaw-bearing nuts. In one example, the yaw-bearing grease tray is translucent. In another example, a field replaceable absorbent material is sized to fit within the arcuate flat band portion.

The present application relates to copper wire technical field, disclose a kind of round flat alternate interconnection copper strip, including copper wire, and a plurality of linearly distributed copper flat band section are formed on copper wire, and the both ends of copper flat band section are formed with gradual change section.A kind of production device of round flat alternate interconnection copper strip, including first roller and second roller arranged in upper and lower, first roller includes first axle and deformation roller body;Second roller includes coaxial fixed connection of second axle and circular roller body;The outer wall of deformation roller body includes first arc section with radius R1, second arc section with radius R2, straight line section, round corner section, R2>R1, first arc section, second arc section are coaxial with first axle;Circular roller body is the cylinder with radius R1.By round flat alternate arrangement can increase the welding strength of interconnection copper strip and battery piece, improve the connection stability of interconnection strip and battery piece;By providing a kind of production device of round flat alternate interconnection copper strip, the production and processing of round flat alternate interconnection copper strip can be facilitated.

The utility model discloses a wearable sports Bluetooth earphone, which comprises a fixing band, the whole fixing band is of a flat band-shaped structure, the head and the tail of the fixing band are in closed connection, the outer side of the fixing band is detachably connected with a first earphone and a second earphone, and the two ends of the first earphone and the two ends of the second earphone are integrally provided with convex plates. The wearable sports Bluetooth headset fixing band comprises a fixing band body, a protruding plate is arranged on the fixing band body, a connecting port is formed in the surface of the protruding plate and used for insertion connection of the fixing band body, a first connector and a second connector are integrally arranged at the two ends of the fixing band body respectively, and a binding face is arranged on one side of the first connector. The bottom of the fixing band penetrates through the earphone and is fixed at the jaw position, so that the pressure on the ear is reduced, the earphone is kept stable, the earphone is suitable for being used during sports, and the earphone is prevented from shaking or falling off.

The application discloses an electromagnetic flat band for Fano resonance detection and with significant robustness, a plurality of first patterns and a plurality of second patterns are plated on the surface of an electrolyte substrate, and all the first patterns and all the second patterns are periodically arranged on the electrolyte substrate, the first pattern is a vertical pattern formed by rotating the second pattern by 90 DEG, and the material of the first pattern and the second pattern is metal. The electrolyte substrate is used as a support substrate, two groups of mutually perpendicular metal structures are prepared on the electrolyte substrate, a specific electromagnetic coupling effect is formed through the orthogonal arrangement of the metal structures, and then an optical flat band is stably generated. Different from the design of the existing single metal mode or non-orthogonal metal structure, the application can strictly control the vertical arrangement angle, size parameter and distribution density of the two groups of metal, so that the synergistic coupling effect is generated between the metal structures, the controllable generation of the optical flat band is realized, and the spectral characteristics of the flat band can be stably maintained.

The invention discloses a broadband topology slow sound protection method based on Brillouin region multi-winding modulation, and the method employs a topological photonic crystal and resonant cavity coupling structure to achieve broadband topology slow sound protection based on Brillouin region multi-winding modulation, and the coupling structure comprises a topological photonic crystal and a resonant cavity. The topological photonic crystal comprises a honeycomb lattice and an acoustic topological insulator, and the resonant cavities are periodically placed along the lower edge of the acoustic topological insulator to construct a resonant cavity array. According to the invention, coupling of a near-flat band and a topological edge state dispersion band in a Brillouin region is realized by utilizing resonance induction, so that novel hybrid edge state dispersion is formed. The synergistic interaction of the plurality of flat bands enables the topology edge state dispersion band to form a plurality of windings in the Brillouin region, thereby achieving the broadband topology slow sound phenomenon. The mechanism not only has multi-dimensional adjustability and robustness, but also can actively tune the sound wave group velocity by independently adjusting resonator parameters, and can cooperate with multi-parameter tuning.

The present disclosure provides a charge position determination method and device, electronic equipment and computer readable storage medium, and relates to the technical field of semiconductor production and manufacturing. The method comprises: configuring at least one measurement condition acting on a target device; determining a corresponding target flat band voltage of the target device under each measurement condition; obtaining a pre-configured voltage distance association rule; the voltage distance association rule comprises an association relationship between a charge position and a flat band voltage; and determining a charge position of a mobile charge in the target device in the target device based on the voltage distance association rule and the at least one target flat band voltage. The present disclosure can quickly determine the charge position of the mobile example charge in the gate oxide layer and analyze the device threshold voltage of the semiconductor device.

A SiC MOSFET gate oxide layer degradation comprehensive diagnosis method and system, the method comprises the following steps: constructing a data set, and training to obtain a junction temperature estimation function; obtaining actual precursor parameters under actual operating conditions through a measurement circuit, substituting the actual precursor parameters into the junction temperature estimation function to obtain a current actual junction temperature estimation value, substituting the current actual junction temperature estimation value into a linear relationship between the precursor parameters and the junction temperature before the gate oxide layer degrades to obtain the flat band voltage and the threshold voltage of the gate oxide layer without degradation at the junction temperature; calculating the difference between the actual precursor parameters and the precursor parameters at the junction temperature without degradation of the gate oxide layer to obtain a precursor parameter drift amount, and performing comprehensive diagnosis of the gate oxide layer degradation according to the precursor parameter drift amount to obtain a comprehensive diagnosis result. The present application solves the misdiagnosis problem caused by temperature drift in the prior art, improves the accuracy and robustness of the degradation diagnosis, and realizes real-time monitoring and thermal state management of the device working junction temperature state.

The utility model discloses a bandlet traction clamp which comprises a clamp body and a sliding pin, the clamp body is in a straight strip shape, one end of the clamp body is a clamp opening, the sliding pin is arranged on the clamp body in a sliding mode, and the sliding pin can slide on the clamp body in the length direction of the clamp body till the clamp opening of the clamp body is in a closed state so as to clamp the end of a bandlet. Or the clamping body slides until the clamping opening of the clamping body is in an open state so as to loosen the end part of the bandlet; when a bandlet needs to penetrate through the bandlet penetrating hole, one end of the bandlet can be directly clamped through the clamping opening of the bandlet traction clamp, and the bandlet traction clamp can play a role of a traction needle to drive the bandlet to penetrate through the bandlet penetrating hole.

The application relates to the technical field of semiconductors and discloses a flexible thin film transistor mechanical fatigue life prediction method based on low-frequency noise, which comprises the following steps: obtaining a flexible thin film transistor to be predicted; calculating the transfer characteristic curve and the low-frequency noise power spectrum of the flexible thin film transistor to be predicted; obtaining first data of the flexible thin film transistor to be predicted based on the transfer characteristic curve, calculating second data of the flexible thin film transistor to be predicted based on the first data and the low-frequency noise power spectrum, inputting the mechanical stress intensity, the cycle number and the second data into a trained life prediction model, and outputting a curve graph of the degradation amount of the flat-band voltage power spectrum density and the degradation amount of the contact noise power spectrum density changing with the cycle number; and obtaining the fatigue life of the flexible thin film transistor to be predicted under a specific mechanical stress intensity condition according to the curve graph. The application can improve the prediction accuracy and reliability, reduce the time and cost required for complete fatigue life testing of the device.

A wiring board includes a flat band-shaped portion constituted by a flexible printed circuit board and a reinforcing plate having a flat-plate shape and made of metal, a part of which is fixed to the band-shaped portion, and the band-shaped portion and the reinforcing plate are bent at a predetermined position during manufacture of an optical unit with a shake correction function. The reinforcing plate is disposed across a bend line, which is a reference for a bent position of the band-shaped portion, and is fixed to the band-shaped portion only on one side of the bend line.

According to an example aspect, there is provided an arrangement for producing at least one flat band effect for at least one wavelength range of electromagnetic radiation, the arrangement comprising: a first set of first linear sequences of nanostructures, said first linear sequences being separated from one another such that an inter-sequence distance of adjacent first linear sequences is greater than a distance of adjacent nanostructures within the first linear sequences.