61 results about "Flat band" patented technology

The nitride semiconductor blue laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and a topological photon electronic composite flat band layer is arranged between the lower limiting layer and the lower waveguide layer. The topological photon electron composite flat band layer has a refractive index coefficient distribution characteristic and a forbidden band width distribution characteristic. According to the invention, an electron energy band and a photon energy band form high-dimensional line degeneracy in a momentum space, the interaction intensity of free electrons and photons is enhanced, the phase mismatch of the free electrons and the photons is overcome, the radiation intensity of the free electrons is excited, the free electron coupling light quantum efficiency is improved, and full energy-momentum matched flat band resonance is realized. Laser far-field radiation is enhanced, and laser mode gain and optical power are improved.

The invention provides a method for reducing the interface state density of a SiC-MOS device and an MOS capacitor. The method comprises the following steps: providing a silicon carbide substrate; forming a silicon dioxide oxide layer on the silicon carbide substrate; pure oxygen annealing is carried out by adopting a rapid annealing process; pure nitrogen annealing is carried out by adopting a rapid annealing process; forming a gate electrode on the silicon dioxide oxide layer; and forming a substrate electrode at the bottom of the silicon carbide substrate to obtain the SiC-MOS capacitor. According to the invention, the two-step annealing process of low-pressure pure oxygen annealing and pure nitrogen annealing is carried out on the silicon dioxide (SiO2) / silicon carbide (SiC) interface, so that the device has relatively low interface state density and relatively high flat-band voltage stability.

This invention relates to a dual-core metal carrier with variable-diameter wavebands and its manufacturing method, comprising a variable-diameter waveband and standard wavebands. The variable-diameter waveband includes a low-wave-height segment and a high-wave-height segment. Several layers of standard wavebands are disposed on at least one side of the low-wave-height segment of the variable-diameter waveband. The low-wave-height segment and the standard wavebands, as well as two layers of standard wavebands, are separated by short flat bands. The wave-height value of the high-wave-height segment is equal to the sum of the wave-height value of the low-wave-height segment and the wave-height values ​​of the several standard wavebands disposed on the low-wave-height segment side. One variable-diameter waveband and several layers of standard wavebands constitute a waveband unit. Adjacent waveband units are separated by long flat bands. Several layers of waveband units are rolled to form a metal carrier. The dual-core metal carrier with variable-diameter wavebands and its manufacturing method improve the problem of high back pressure of the carrier, reduce material costs, realize product diversification, and improve the thermal vibration resistance and thermal shock resistance of the metal carrier.

The invention provides a mobility separation method and device for a core-shell structure junctionless transistor, and the method comprises the steps: obtaining a first relation curve of drain current-gate voltage and a second relation curve of gate channel capacitance-gate voltage, determining first gate voltage when a core layer in the core-shell structure junctionless transistor is in a flat band based on the second relation curve, and separating the mobility of the core-shell structure junctionless transistor from the first gate voltage. In the first relation curve, determining the drain current corresponding to the grid voltage as the first grid voltage as the first current in the core layer, and according to the first relation curve and the first current, determining the second current in the shell layer of the junction-free transistor with the core-shell structure. And according to the second current, the transconductance of the second current to the gate voltage, the gate voltage and the first gate voltage, determining the first mobility of the shell layer in the core-shell structure junctionless transistor. In short, the current in the single channel is separated from the total current, and then the mobility corresponding to the channel is determined based on the current in the single channel, so that accurate characterization of the mobility of each channel is realized.

The invention relates to the field of spectrum processing, and provides a micro spectrometer and a manufacturing method thereof, the micro spectrometer comprises a metasurface, the metasurface comprises a thin film with a plurality of grating structures, the plurality of grating structures are configured to generate qBIC modes for light with different wavelengths and output corresponding light intensities, the energy band of the grating structure presents flat-band dispersion in an incidence angle range of-10 degrees to + 10 degrees; the photoelectric detector is used for detecting the light intensity output by the plurality of grating structures of the metasurface and outputting an electric signal; and the calculation module is used for decoding the electric signal to obtain spectral information. According to the invention, the photon quasi-bound state (qBIC) and photon flat band characteristics in the continuous medium are utilized to realize high-sensitivity, high-performance and angle-insensitive spectrum detection.

The utility model provides a metal honeycomb carrier with a turbulent flow type perforated structure, which comprises a metal outer frame and an inner core positioned in the metal outer frame, the inner core is formed by laminating a flat belt and a wave belt, a plurality of through holes are uniformly arranged on the flat belt, and the wave belt is a broken hole type corrugated metal wave belt. According to the metal honeycomb carrier, the wave band and the flat band are combined into a whole, so that bidirectional pore channels can be formed, the catalytic conversion efficiency is higher, under the same catalytic effect, the size of the inner core is smaller, the space required for packaging is smaller, the used materials are fewer, and the manufacturing cost of the metal honeycomb carrier is reduced; the flat zone and the wave zone can realize interconnection between pore channels, so that the air flow staying time is prolonged, and the catalytic effect is more uniform; the applied flat band and wave band are thinner, and the back pressure is smaller.

To provide a fastening band which is easy to fasten and provides a strong and stable fastening force.SOLUTION: In a fastening band B, a flat band body B1 formed of an elastic material comprises: each projection part 1 projectingly formed in a direction intersecting a longitudinal direction X of the band body B1 from the band body B1 in the vicinity of one end part along the longitudinal direction X; and each hole part 2 formed so as to be engaged with each projection part 1 in the vicinity of the other end part along the longitudinal direction X of the band body B1. The respective projection parts 1 and the respective hole parts 2 are formed along the longitudinal direction X, and a distance between the respective hole parts 2 is shorter than a distance between the respective projection parts 1.SELECTED DRAWING: Figure 1

The utility model provides a tool for processing a spine trauma fixing band triangular end, which comprises two clamp bodies and two clamping plates, each clamp body is provided with a clamp handle part and a clamp head part, the opposite walls of the two clamp head parts are provided with grooves along the longitudinal direction of the clamp head parts, the opposite groove walls of the two grooves are provided with clamping grooves, and the clamping plates are arranged on the clamp handle parts and the clamp head parts. Through holes are formed in the opposite walls of the two plier head portions in the transverse direction of the plier head portions, one end of each through hole is communicated with a groove located in the same plier head portion, the two clamping plates are each provided with a triangular clamping portion and a rectangular clamping portion, plier teeth are arranged on the opposite walls of the two clamping portions, and the size of the clamping portions is equal to that of the grooves. And rectangular grooves are formed in opposite walls of the two clamping parts. The utility model aims to clamp and fix the bandlet by matching the two clamping plates with the two clamp bodies, and then cut the bandlet by using the hot cutter to finish manufacturing, so that the manufacturing efficiency is improved, and triangular bandlet tips with stable sizes can be manufactured in batches.

The application belongs to the technical field of semiconductor testing and relates to a semiconductor epitaxial layer resistivity measuring device and method. The measuring device comprises a sample table for placing a sample to be measured, a pretreatment unit for stabilizing the surface charge of the sample to be measured and a measuring unit for detecting the resistivity of the sample to be measured. The pretreatment unit comprises a second electrode and a first voltage source. The second electrode is connected to the front surface of the sample to be measured. The first voltage source forms a first closed loop with the second electrode and a first electrode on the back surface of the sample to be measured. The first voltage source provides a first voltage to the second electrode. The pretreatment unit provided in the application directly stabilizes the surface charge of the sample to be measured by actively applying an electric field, greatly improves the repeatability of CV measurement, effectively suppresses the flat-band voltage drift phenomenon and thus obtains more real and accurate resistivity values of the sample to be measured.

The invention discloses a topology angular state regulation and control method based on a flat-band two-dimensional micro-ring lattice, and belongs to the technical field of topology angular state regulation and control, and the method comprises the following steps: S1, constructing the flat-band two-dimensional micro-ring lattice; s2, dynamically regulating and controlling a topological angular state based on the constructed flat-band two-dimensional micro-ring crystal lattice; according to the invention, through the design of the hexagonal honeycomb type micro-ring resonant cavity and the combination of the dynamic phase regulation and control technology, flexible regulation of the photon standard potential and a compact local mode in which the angular state of the topological state has robustness are realized, and the core problems of inflexible regulation and control of the photon standard potential, insufficient locality of the topological state, poor manufacturing fault tolerance and the like in the prior art are solved; and a high-performance and high-reliability design normal form is provided for the on-chip integrated photonic device.

The following embodiments relate to a fastening device (11, 11.2) for fastening a position code band (9) in an elevator shaft (2), comprising a first receptacle (13) for completely fixedly receiving the end of the position code band (9) designed as a flat band in a defined orientation, a first fastening (14) for fastening the fastening device (11, 11.2) in the elevator shaft (2) and a decoupling element (20) connecting the first receptacle (13) and the first fastening (14), wherein the decoupling element (20) has an elastic deformability sufficient for decoupling in a direction extending parallel to the plane of extension of the flat side (9.2) of the position code band (9) provided on the first receptacle (13).The following embodiments further relate to an elevator installation (1) comprising an elevator shaft (2), a position code band (9) designed as a flat band and a car (3) movable along the elevator shaft (2), wherein the position code band (9) is fastened to the elevator shaft (2) at least at one end by means of a fastening device (11, 11.2) according to one of the preceding claims.

A halogenated dielectric oxide film in a metal oxide semiconductor device modulates a flat-band voltage of the metal oxide semiconductor device. The halogenated dielectric oxide film is formed by forming a low quality oxide film followed by exposing the low quality oxide film to a halogen-based plasma. The low quality oxide film may include one or more of the following: carbon, nitrogen, and hydrogen. The halogen-based plasma may include a chemically reactive species of a halogen-containing gas. After exposure to a halogen-based plasma, a halogenated dielectric oxide film is formed such that the metal oxide semiconductor device has a flat band voltage outside an operating voltage range of the metal oxide semiconductor device. And even after annealing, the flat-band voltage is basically kept unchanged.

The invention relates to a SiC MOSFET gate oxide degradation comprehensive diagnosis method and system, and the method comprises the steps: constructing a data set, and training to obtain a junction temperature estimation function; acquiring an actual precursor parameter under an actual operation condition through a measuring circuit, substituting the actual precursor parameter into a junction temperature estimation function to obtain a current actual junction temperature estimation value, and substituting the current actual junction temperature estimation value into a linear relation between the precursor parameter and the junction temperature before degradation of the gate oxide layer to obtain a junction temperature estimation value; obtaining a flat-band voltage and a threshold voltage when the gate oxide layer is not degraded at the junction temperature; and calculating a difference value between the actual precursor parameter and the precursor parameter when the gate oxide layer is not degraded at the junction temperature to obtain a precursor parameter drift distance, and carrying out gate oxide layer degradation comprehensive diagnosis according to the precursor parameter drift distance to obtain a comprehensive diagnosis result. According to the invention, the problem of misdiagnosis caused by temperature excursion in the prior art is solved, the accuracy and robustness of degradation diagnosis are improved, and real-time monitoring and thermal state management of the working junction temperature state of the device are realized.

This invention discloses a narrowband polarization metasurface for suppressing long-wave infrared angular dispersion and its fabrication method, relating to the field of optical component technology. Addressing the problems of difficult fabrication and strong angular dispersion inherent in existing polarizers, the metasurface of this invention comprises a barium fluoride substrate and a double-layer composite grating structure disposed on its surface. The composite grating includes a bottom arsenic selenide grating and a top metal layer. By limiting the period of the composite grating to 5.5-6.25 micrometers and the width of a single double-layer grating structure to 4.5-5.5 micrometers, the downward-leaking guided modes and Fabry-Perot cavity modes within the structure undergo strong compression in momentum space, resulting in band folding and anti-crossing flat-band effects. This invention not only relaxes the feature size to the micrometer level, significantly reducing fabrication difficulty, but also fundamentally suppresses the strong angular dispersion of plasmon resonance in narrowband, achieving a high polarization extinction ratio under large angle tolerance and greatly reducing the collimation requirements of practical optical paths.

The utility model provides a metal honeycomb carrier with a square staggered pore channel structure, which comprises a metal frame body, a metal honeycomb carrier is fixedly arranged in the metal frame body, and the metal honeycomb carrier is formed by stacking flat belts and square staggered pore channel metal foil belts. A first hole channel and a second hole channel are formed in the square staggered hole channel metal foil belt in the length direction, the second hole channel is communicated with the first hole channel in a staggered mode, a first wave band is arranged in the length direction based on the first hole channel, and a second wave band is arranged in the length direction based on the second hole channel. The first wave zone and the second wave zone are circularly arranged in the width direction of the square staggered hole channel metal foil belt. According to the utility model, the metal foil belt is pressed upwards to form the staggered square pore channel structure, so that the back pressure is increased, the time of waste gas in the metal honeycomb carrier is prolonged, the catalytic conversion efficiency of the metal honeycomb carrier can be improved, and the square pore channel structure design can increase the welding area of the foil belt and the flat belt; and the welding strength of the metal honeycomb carrier is enhanced.

The invention discloses a two-dimensional material, which is characterized in that the molecule of the material is a double-element three-layer sandwich planar macromolecule with an (AMA) N structure formed by combining any transition element atom M containing an unfilled d track or f track in the periodic table of elements and a main group active metal element atom A, the coordination number of atoms of the M atomic layer is saturated coordination 12, the coordination number of the M atoms is smaller than or equal to 12 at the edge of a molecular plane, and subscript N is a natural number larger than or equal to 4 and represents the number of atoms of the same kind in each layer of macromolecules. According to the invention, the practical problems of small size, high manufacturing cost, difficulty in industrial production technology development and the like of the current two-dimensional material are solved by the rotational symmetry of intramolecular atom saturated coordination bonds, the extension ductility of endogenous electron cloud flat bands and the ductility of the macroscopic two-dimensional material formed by splicing and laminating.

The present disclosure relates to a photonic edge coupler or spot-size converter (SSC) comprising multiple juxtaposed layers of auxiliary waveguides with an underneath silicon-on-insulator (SOI) waveguide. In an embodiment, an SSC comprises two waveguide layers each having four auxiliary waveguides including two inner auxiliary waveguides interposed between two outer auxiliary waveguides. The waveguide layers collectively include at least two sections. In a first section, each auxiliary waveguide widens in a light propagation direction. In a second section, each outer auxiliary waveguide converges towards each other. The SOI waveguide partially overlaps the first section, fully overlaps the second section, and extends therebeyond. The SSC facilitates coupling of light from a flat-cleaved standard single-mode fiber with mode-field diameter of 10.4 µm at 1550 nm to an SOI waveguide with low loss and flat band response in the C-band and L-band telecommunication wavelengths.

The application discloses a Kagome photonic crystal, belongs to the technical field of lasers, and is used for constructing a topological laser, wherein the Kagome photonic crystal comprises a plurality of supercells, each supercell comprises three hexapole cavities, and the plurality of supercells are periodically arranged along a first direction and a second direction, so that all the hexapole cavities form a Kagome lattice structure as a whole. The technical scheme provided by the application constructs a Kagome supercell through the hexapole cavities, the momentum space of the Kagome lattice has a flat-band energy band with close-to-zero dispersion, the photon group velocity in the flat band tends to be zero, the interaction between light and matter is enhanced, and the Kagome photonic crystal has a natural advantage of constructing a two-dimensional topological laser. Through design of lattice parameters, a single light field mode that can be adjusted and controlled appears in a forbidden band, the band edge mode competition problem of a traditional semiconductor laser is effectively inhibited, and a stable single-mode laser with a high quality factor is obtained.

The invention discloses a round flat surgical suture and a continuous manufacturing method thereof, and relates to the technical field of surgical suture. The round flat surgical suture comprises a round head end line and a flat body segment line, and the two ends of the flat body segment line are provided with round head end lines, and the round head end line and the flat body segment line are a braided integrated structure. The round flat surgical suture and the continuous manufacturing method thereof, the round flat surgical suture comprises a round head end line and a flat body segment line, the round head end line is convenient to pass through the surgical suture needle or the supporting instrument, the flat body segment line for effective suturing in the middle is in the shape of a flat belt, and when the suture is subjected to force, due to its flat belt structure, compared with the existing surgical sutures that are all round headed, the pressure of the round flat surgical suture on the soft tissue under the same large suture tension will be reduced by multiples, and the shortcomings such as cutting damage caused by the suture of the round suture are significantly improved, and the round segment and the flat belt segment of the same suture have a natural transition, the fiber is an integral structure, the material is consistent, the biocompatibility is good, and the tensile strength is high.

A Deep Trench Isolation (DTI) structure is disclosed. The DTI structures according to embodiments of the present disclosure include a composite passivation layer. In some embodiments, the composite passivation layer includes a hole accumulation layer and a defect repairing layer. The defect repairing layer is disposed between the hole accumulation layer and a semiconductor substrate in which the DTI structure is formed. The defect repairing layer reduces lattice defects in the interface, thus, reducing the density of interface trap (DIT) at the interface. Reduced density of interface trap facilitates strong hole accumulation, thus increasing the flat band voltage. In some embodiments, the hole accumulation layer according to the present disclosure is enhanced by an oxidization treatment.

The application discloses a kind of based on flat band two-dimensional micro-ring lattice Topological Corner State Regulation Method, belong to topological corner state regulation technical field, including the following steps: S1: construct flat band two-dimensional micro-ring lattice;S2: based on the dynamic regulation topological corner state of constructed flat band two-dimensional micro-ring lattice;The application is designed by hexagonal honeycomb micro-ring resonator, combined with dynamic phase regulation technology, realize the flexible adjustment of photonic gauge potential and the compact local mode of robustness of topological state angular state, solve the core problems such as photonic gauge potential regulation inflexibility, topological state local deficiency and poor fault tolerance in prior art, provide high performance and high reliability design paradigm for on-chip integrated photonic devices.

The invention discloses a design method of a topological photonic flat band, and relates to the technical field of optical information, and the method comprises the following steps: arranging a plurality of dielectric cylinders with C6 rotational symmetry on a topological photonic crystal primitive cell lattice; part of the dielectric cylinders are shrunk inwards along the center of the crystal lattice to form a common area; extending the rest dielectric cylinders outwards along the center of the crystal lattice to form a non-trivialness area; and combining the trivialness region and the non-trivialness region to form a supercell crystal, and obtaining a topological photon flat band under optical excitation. A topological boundary state photon flat band which covers a full Brillouin region and has extremely low group velocity is realized, and the topological boundary state photon flat band is protected by the topology of a wide band gap, so that the development of a novel topological slow light device is facilitated.

Apparatus is described for performing simultaneous corona deposition and surface electric field induced second harmonic (EFISH) measurements. Example designs include systems including corona guns having a focus tube for deposition of corona charge with windows therein for passage of a laser beam incident on and reflected from a sample surface. Various designs may also employ masks proximal the distal end of the focusing tube and / or proximal the sample surface. In some implementations, the apparatus is used to make ungrounded and therefore non-invasive measurements, for example, on dielectric on semiconductor such as, e.g., interface state density (Dit), flatband voltage (Vfb) and / or lifetime measurements.

A yaw-bearing grease tray for a wind turbine. The yaw-bearing grease tray includes an arcuate flat band portion with an inner arcuate sidewall, an outer arcuate sidewall, a first end wall and a second end wall which are perpendicular and disposed on the arcuate flat band portion. The yaw-bearing grease tray includes a ledge formed on the first end wall to be substantially parallel to the arcuate flat band portion and a step formed at the second end wall to be substantially parallel to the arcuate flat band portion. A plurality of magnets are disposed on the arcuate flat band portion to magnetically couple with yaw-bearing bolts and yaw-bearing nuts. In one example, the yaw-bearing grease tray is translucent. In another example, a field replaceable absorbent material is sized to fit within the arcuate flat band portion.

The invention provides a watchband adsorbing and transferring device, and belongs to the field of transferring of 3C parts, the device comprises a sucker plate, a plurality of band body suction nozzle units, a band end suction nozzle unit and a driving module, the band end suction nozzle unit adopts a long groove type suction nozzle or a plurality of side-by-side circular suction nozzles, and is used for adsorbing and picking up wider band ends of watchbands; according to the device, a suction nozzle lifting self-driver or a suction nozzle unit is installed on different suction nozzle plates, and non-flat belts are picked up; the device can well adapt to adsorption and pickup of band ends and non-flat bands, and is convenient to popularize and apply in the fields of watchband detection, devices and processing of smart watches.

The invention provides an AlOx P-type dipole MOS device and a preparation method thereof, the AlOx P-type dipole MOS device comprises a P-type silicon substrate, a SiO2 thin film, a HfO2 thin film, an AlOx thin film, a TiN thin film and a W thin film which are arranged from bottom to top, a Ni thin film is deposited on the back surface of a silicon wafer of the P-type silicon substrate, after an ultrathin AlOx dipole layer is deposited on the HfO2 thin film, the SiO2 thin film, the HfO2 thin film and the AlOx thin film are grown in situ in a whole process by adopting an ALD process through ultra-short-time high-temperature annealing, and the W thin film is deposited on the back surface of a silicon wafer of the W thin film. Flat-band voltage regulation and control of the MOS device are achieved through fire driving, Al is diffused into HfO2 after driving annealing, a dipole is formed on a High k / SiO2 interface layer, the local chemical environment and charge distribution at the interface are changed, and therefore a fixed electric dipole layer is formed.

The utility model provides a kind of flat band downer, including connecting frame, cam installed on connecting frame and control the knob of falling, the cam is equipped with first pass through the channel for flat band and the second pass through the channel located in the side of first pass through the channel, the cam is equipped with the transition mouth of the communication first pass through the channel and second pass through the channel relative to one end of knob, the connecting frame bottom end is connected with pivot joint axle, pivot joint axle is pivoted with connecting block, the connecting block is equipped with with cam cooperation to flat band generates extrusion, realize the stop block of downer stop, the knob is connected in the end opposite stop block in connecting frame by fixed shaft, the knob is swung relative to pivot joint axle by connecting frame control cam, realize downer falls.The utility model is convenient for falling and can be applied to flat band.

The invention relates to a flat belt cable (11) having a carrier film (24) with at least one, preferably at least two, electrical conductor tracks (12), the carrier film (24) having a first connection region (5) at a first end (5) and a second connection region (8) at a second end (7), the first connection region (6) being arrangeable between two sheets (3, 4) of a composite sheet (2). The first connection region (6) can be led out from the composite sheet (2) between the two sheets (3, 4) and the second connection region (8) can be led out from the composite sheet (2) between the two sheets (3, 4), and wherein the at least one electrical conductor track (12) in the first connection region (6) can electrically contact the electrical functional element (10), and wherein the carrier film (24) has a temperature sensor (20) and two additional conductor tracks (13a, 13b) and the additional conductor tracks (13a, 13b) electrically contact the temperature sensor (20), as a result, the ohmic resistance between the additional conductor tracks (13a, 13b) can be measured.