Mutual compensating metals-oxides-semiconductor structure and its mfg. method

Abstract

PROBLEM TO BE SOLVED: To provide a complementary metal-oxide semiconductor (CMOS) structure including an intermediate layer between a Si-containing gate electrode and a high-k gate dielectric, so that a threshold voltage and a flat-band voltage of the structure are stabilized.

Description

technical field [0001] The present invention relates generally to semiconductor devices, and more particularly to a complementary metal-oxide-semiconductor structure (CMOS) having an interlayer between its Si-containing gate electrode and a high-κ gate dielectric layer capable of The threshold voltage and flatband voltage of this structure are stabilized. Background technique [0002] In standard silicon complementary metal-oxide-semiconductor (CMOS) technology, a p-type field-effect transistor (pFET) uses a p-type polysilicon layer doped with boron (or other acceptor elements) as the gate electrode, which is deposited on a silicon dioxide or silicon oxynitride gate oxide. The gate voltage applied through this polysilicon layer creates an inversion channel in the n-type silicon under the gate oxide layer. [0003] For a pFET to work properly, inversion should begin when a slightly negative voltage is applied to the polysilicon (poly-Si) gate electrode. for figure 1 For t...

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Problems solved by technology

[0008] The present invention adds an insulating interlayer between the high κ gate dielectric layer and the Si-containing gate conductor, which solves the above-mentioned problem of threshold voltage and flat-band voltage change

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