47 results about "Boltzmann constant" patented technology

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5 k_BT, wherein k_B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

A photo-detector with a reduced G-R noise comprises two n-type narrow bandgap layers surrounding a middle barrier layer having an energy bandgap at least equal to the sum of the bandgaps of the two narrow bandgap layers. Under the flat band conditions the conduction band edge of each narrow bandgap layer lies below the conduction band edge of the barrier layer by at least the bandgap energy of the other narrow bandgap layer. When biased with an externally applied voltage, the more negatively biased narrow bandgap layer is the contact layer and the more positively biased narrow bandgap layer is the photon absorbing layer. Under external bias conditions the bands in the photon absorbing layer next to the barrier layer are flat or accumulated, and the flat part of the valence band edge in the photon absorbing layer lies below the flat part of the valence band edge of the contact layer and has an energy of not more than 10kTop above the valence band edge in any part of the barrier layer (k=Boltzman constant and Top=operating temperature).

In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average W_A of widths at bottoms of the projections is set to satisfy W_A≧λ/n.

A thermally assisted magnetic recording medium includes a substrate and at least two, i.e., first and second magnetic recording layers. These layers are hard magnetic layers and contain magnetic grains and a non-magnetic substance magnetically segregating the magnetic grains at grain boundaries. The first magnetic recording layer has a magnetic anisotropy energy K_u1, a grain volume v₁, and energy for maintaining its recording magnetization K_u1v₁; the second magnetic recording layer has a magnetic anisotropy energy K_u2, a grain volume v₂, and energy for maintaining its recording magnetization K_u2v₂; and the ratio K_u1v₁/k_BT of K_u1v₁ to a thermal fluctuation energy k_BT, where k_B represents a Boltzmann constant and T represents an absolute temperature, and the ratio K_u2v₂/k_BT of K_u2v₂ to k_BT satisfy the following conditions: K_u1v₁/k_BT is larger than K_u2v₂/k_BT at room temperature, but is smaller than K_u2v₂/k_BT at temperatures around the Curie temperature of the first magnetic recording layer.

Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression M_s²(t/w)>|J_ex|>(2k_BTΔ)/S, in which k_B is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and M_s are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and J_ex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.

A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

A non-contact temperature measuring method comprises the steps of shooting a target point to obtain the image data of a first wavelength and the image data of a second wavelength; when the target point is shot, adjusting the shutter time for obtaining the image data of the first wavelength and the shutter time for obtaining the image data of the second wavelength to obtain a first brightness corresponding to the first wavelength and a second brightness corresponding to the second wavelength; and computing the temperature of the target point according to the following formula (1), wherein lambda 1 is the first wavelength, lambda 2 is the second wavelength, L lambda 1 (T) is the first brightness, L lambda 2 (T) is the second brightness, A is a correction coefficient, S1 is the shutter time for obtaining the image data of the first wavelength, and S2 is the shutter time for obtaining the image data of the second wavelength. In the formula: constant C=hc /k, k is a Planck constant, c is light velocity, and h is a Boltzmann constant.

A method of designing a thermally-assisted magnetic recording apparatus having a magnetic recording medium, a heater and a magnetic head includes, determining a stable retention time t_st for recorded magnetization and a thermal-fluctuation stability coefficient β_st calculated from β(T)=K_uV/k_BT, where K_u is a magnetic anisotropy energy density, V is an activation volume, and k_B is Boltzmann's constant, obtaining an equivalent degradation time t_EQ calculated from t_EQ=Σ(Δt_EQ), that sums values of Δt_EQ within a period of time Δt for a time span during which the medium is substantially degraded, where Δt_EQ=exp(ln(Δt)−β−β_st) and β is a thermal-fluctuation stability coefficient for a medium temperature T in Δt, and determining specifications of the medium, the heater and the magnetic head in a manner to meet the relationship of t_EQ<t_st.

The invention relates to a method for calibrating surface temperature of a metal flat plate, which comprises the following steps: heating one surface of a measured metal flat plate by taking a constant temperature bath medium as a heating source, and installing a plurality of direct contact type thermal sensors on the surface to measure the temperature of the measured metal flat plate; measuring the surface temperature of the measured metal flat plate on the other surface of the to-be-measured metal flat plate with a non-contact type temperature-measuring apparatus; and calculating the surface emissivity of the measured metal flat plate according to the temperature measurement principle Stefan-Boltzmann law of an infrared temperature-measuring apparatus, wherein the Stefan-Boltzmann law is that the relationship between the radiant energy of a black body and the temperature T of the black body is as follows: W is equal to epsilon*alpha*T4, where Boltzmann constant alpha is equal to 5.67*10<-8>W/m<2>.K<4>, T is the absolute temperature of a tested object and has a unit of K, and epsilon is the surface emissivity of the tested object. The method provided by the invention is simple and easy to implement, and can accurately measure the surface emissivity of the measured metal flat plate so as to ensure accurate surface temperature measurement of the measured metal flat plate.

An X-ray detector including photo detecting pixels capable of reducing kTC switching noise (k: Boltzmann's constant; T: temperature; C: capacitance) by accurately performing correlated double sampling (CDS). Each of the pixels includes a first transistor comprising a first electrode connected to a first power line, a second electrode connected to a first node, and a gate electrode receiving the reset signal; a second transistor comprising a first electrode connected to the first power line, a second electrode connected to a second node, and a gate electrode connected to the first node; a third transistor comprising a first electrode connected to the second node, a second electrode connected to a data line, and a gate electrode connected to a gate line; a fourth transistor comprising a first electrode connected to the first node, a second electrode connected to a photo detecting diode, and a gate electrode receiving the control signal; and the photo detecting diode comprising a first electrode connected to the fourth transistor, and a second electrode connected to ground.

In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active layer (230) is lambada, and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA >= lambada/n. In formula 1, L is width of the n-type layer in a direction different from the one direction, T is absolute temperature, W is width of the n-side electrode in a direction different from the one direction, J 0 is current density at the contact portion between the n-side electrode and the n-type layer, e is elementary charge, gamma is diode ideality factor, kappa is Boltzmann constant, rho is specific resistance of the n-type semiconductor layer.

Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V(%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e^−Ea/kT wherein Ko represents a constant (%·Torr), P represents a pressure (Torr), Ea represents an activation energy (eV), k represents a Boltzmann constant, and T represents an absolute temperature.

A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and

heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) $\left[Oi\right]<{\left[Oi\right]}^{\mathrm{eq}}\left(T\right)\exp \frac{2{\sigma }_{\mathrm{SiO}2}\Omega }{rkT}$

is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi]^eq(T) is a limit solubility of oxygen in silicon at a temperature T, σ_SiO2 is the surface energy of silicon dioxide, Ω is a volume of a precipitated oxygen atom, r is a mean COP radius and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-containing atmosphere.

A semiconductor structure having: a first semiconductor layer; and an electric carrier generating layer disposed on the first semiconductor layer to generate electric carriers within the first semiconductor layer by polarization effects, the electric carrier generating layer having a predetermined conduction band and a predetermined valance band, the electric carrier generating layer having a concentration of non-carrier generating contaminants having an energy level, the difference in the energy level of the non-carrier type contaminants and the energy level of either the conduction band or the valence band being greater than 10 kT, where k is Boltzmann's constant and T is the temperature of the electric carrier generating semiconductor layer, the electric carrier generating semiconductor layer being doped with a dopant having an energy level, the difference in the energy level of the dopant and the energy level of either the conduction band or the valence band being greater than 10 kT, the dopant having a concentration equal to or greater than the concentration of the non-carrier generating contaminants.

A continuous inkjet method in which liquid passes through a nozzle, the liquid being jetted comprising one or more dispersed or particulate components and where the particle Peclet number, Pe, defined by

is less than 500 and where the effective particle diameter, d_eff, is calculated as

where Φ(d) is the volume fraction of the particles or components of diameter d (m) and where Φ_T is the total volume fraction of dispersed or particulate components, μ_S is the viscosity of the liquid without particles (Pa.s), ρ is the liquid density (kg/m³), U is the jet velocity (m/s), x is the length of the nozzle in the direction of flow (m), k is Boltzmann's constant (J/K) and T is temperature (K). The present invention limits the magnitude of flow induced noise generated by particulate components in the ink to maximise the efficiency of drop formation and to minimise adverse interactions with the nozzle.

The invention discloses a non-calibration method for quantitative analysis of laser-induced breakdown spectroscopy elements, which is applied to the field of spectral element analysis and aims to solve the technical problems that in the prior art, a to-be-detected sample needs to have certain priori knowledge, and the sample to be detected with unknown elements cannot be quickly and accurately quantitatively analyzed. The method is based on a Maxwell rate distribution law and a Doppler effect; a quantitative relation between the intensity of a spectrum peak and the like and physical quantities such as characteristic light wavelength, element content, instrument parameters, atomic mass, light velocity, upper and lower energy levels, a Boltzmann constant and a Planck constant is given; meanwhile, quantitative analysis of elements of the to-be-detected sample is realized according to a normalization method and the like; and the method provided by the invention can overcome the matrix effect to a great extent, and is suitable for solid, liquid and gas samples and various types of LIBS (Laser-induced Breakdown Spectroscopy) equipment.

The invention belongs to the technical field of temperature measurement instruments, discloses a contact measurement method for the temperature of high-temperature gas based on a steady-state energy flow balance relation and aims to solve the problems existing in measurement of the temperature of a high-temperature heat source in an open state. The method comprises the following steps of: establishing a steady-state equation of a probe tungsten filament and the surrounding environment, measuring a voltage value V at the two ends of the probe tungsten filament and a current value I flowing through the probe tungsten filament through an ampere meter and a voltmeter of a measuring device, thereby calculating the probe tungsten filament resistance R and the probe tungsten filament temperature TW; and substituting the voltage value V, the current value I, the probe tungsten filament temperature TW, the probe tungsten filament superficial area S1 obtained through direct measurement, the total radiation area S2 of the probe tungsten filament, the known heat transfer coefficient beta of the environment and the probe tungsten filament, and Stefan-Boltzmann constant sigma into the established steady-state equation to obtain the temperature TS of the environment gas. The method is easy to operate and low in cost, contact measurement can be carried out on the temperature of 2000-6000 K, and the temperature measurement range of contact measurement is greatly widened.

The embodiment of the invention relates to a semiconductor material analysis and detection technology, discloses a method for measuring activation energy of impurities in a semiconductor, and expandsapplication occasions of a time-resolved fluorescence spectrum. The method comprises the following steps of impurities in the semiconductor participating in fluorescence radiation composite luminescence; obtaining the wavelength and the half-peak width of an impurity luminescence peak; determining a band-pass filter, determining laser excitation intensity, determining fluorescence intensity attenuation curves of corresponding light-emitting peaks at different temperatures, and recording the maximum fluorescence intensity obtained by the detector at the moment t=0; drawing an Arrhenius curve according to the fluorescence maximum intensity and the reciprocal of the temperature measured by the detector at different temperatures, carrying out linear fitting to obtain a slope, and multiplying the slope by a Boltzmann constant to obtain the activation energy of the impurities. The method is advantaged in that the temperature-dependent carrier lifetime information can be obtained by using thevariable-temperature time-resolved fluorescence spectrum, the activation energy of an impurity introduction energy level can be obtained, the method is simple, convenient and easy to operate, experiment cost is greatly reduced, and operation efficiency is greatly improved.