FET based nucleic acid detecting sensor

A sensor and nucleic acid probe technology, applied in the field of nucleic acid detection circuits, can solve the problems of no effective signal detection method, no FET quantitative analysis, etc.

Inactive Publication Date: 2007-07-25
KK TOSHIBA
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Problems solved by technology

[0003] However, conventionally, there is no method for efficiently detecting the signal of a nucleic acid molecule, or a technique for performing quantitative analysis over a wide range of densities using FETs

Method used

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  • FET based nucleic acid detecting sensor
  • FET based nucleic acid detecting sensor
  • FET based nucleic acid detecting sensor

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Embodiment Construction

[0022] A nucleic acid detection sensor, a nucleic acid detection chip, and a nucleic acid detection circuit according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0023] A nucleic acid detection circuit according to an embodiment of the present invention includes a nucleic acid detection sensor 100 . Sensor 100 includes a metal oxide semiconductor field effect transistor (MOSFET) and a substrate. Typically, a plurality of nucleic acid probe molecules (probe DNA) 102 are immobilized to the MOSFET. The MOSFET has a gate 101 , a source 103 , and a drain 104 . Nucleic acid probe molecules 102 are immobilized on the grid 101 . As shown in FIG. 1 , source 103 and drain 104 are connected to each other through body 106 , and gate 101 is stacked on body 106 with gate oxide film 105 interposed therebetween. Source 103 , drain 104 , and body 106 are provided on buried oxide (BOX) 107 . The sensor 100 can be fabrica...

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Abstract

Nucleic acid detecting sensor includes field-effect transistor, detector which detects target nucleic acid molecules having sequences from sample based on degree of a variation in threshold voltage of field-effect transistor, and at least one nucleic acid probe molecule which is hybridized with corresponding one of target nucleic acid molecules, and is immobilized on gate of field-effect transistor, wherein gate width of field-effect transistor is of order of length obtained by expression given below (([epsilon]0[epsilon]rkBT / e<2>n)<1 / 2>, where [epsilon]0is the dielectric constant of vacuum, [epsilon]rthe relative permittivity of channel domain, kBthe Boltzmann constant, T the absolute temperature of the channel domain of FET, e the elementary charge, and n an equilibrium carrier density in the channel region in the field-effect transistor where a channel is formed.

Description

technical field [0001] The present invention relates to a nucleic acid detection sensor, a nucleic acid detection chip, and a nucleic acid detection circuit for detecting a target nucleic acid molecule contained in a sample using a field effect transistor (FET). Background technique [0002] Conventionally, there have been nucleic acid detection sensors that use FETs to detect whether a target nucleic acid molecule is contained in a sample (for example, see Toshiya Sakata et al., "DNA Hybridization Detection Using Gene Field-Effect Transistors", Extended Abstract (64th Fall 2003 Conference), p.1179; Japanese Patent Application Publication No. 2003-322633; PCT National Publication No. 2001-511246, etc.). [0003] However, conventionally, there is no method for efficiently detecting a signal of a nucleic acid molecule, or a technique for performing quantitative analysis in a wide range of densities using FET. Contents of the invention [0004] The present invention has been...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
CPCG01N27/4145G01N27/414
Inventor 大内真一
Owner KK TOSHIBA
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