117results about How to "Accurate emissions" patented technology

In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ / n.t≥ρ⁢⁢J0⁢e4⁢γκB⁢T·W⁡(L-W)Formula⁢⁢1whereL is width of the n-type layer in a direction different from the one direction,T is absolute temperature,W is width of the n-side electrode in a direction different from the one direction,J0 is current density at the contact portion between the n-side electrode and the n-type layer,e is elementary charge,γ is diode ideality factor,κB is Boltzmann constant,ρ is specific resistance of the n-type semiconductor layer.

An oriented circular light-reflecting plate with triangular micro prisms having identical cross sections and a circular plate lamp made therefrom, wherein a plurality of annular micro prism bodies (111) are arranged on the prism surface (11) of the light-reflecting plate (1), the cross sections through the central axis are triangles, which have the same shapes, the same cross sectional areas and the same distances along the diameter direction, the apex of the triangle closest to the central axial line has the shortest distance away from the smooth surface (12) of the light-reflecting plate, and the apices of the triangles towards the periphery of the light-reflecting plate have the successively increasing distances away from the smooth surface 912) of the light-reflecting plate. The circular plate lamp comprises the light-reflecting plate (1), a heat-dissipating frame (3), a reflecting back plate (5), a heat-dissipating plate (4) and lamp bodies (2), wherein the heat-dissipating frame (3) is sleeved around the light-reflecting plate 91) so as to form a gap with the cylindrical surface of the light-reflecting plate 91) and consequently constitute a lamp groove (14) to receive the lamp bodies (2).

A vehicle lighting device includes a reflection type lamp unit including a first LED that emits light downward; and a reflective face that reflects part of the light emitted by the first LED outward to the front of the vehicle lighting device. Part of the light emitted by the first LED is output, as directly emitted light, directly to the front of the vehicle lighting device. The reflective face includes a first reflective portion that reflects light as vertically almost parallel light and as horizontally diffused light, and a second reflective portion that reflects light below the light reflected by the first reflective portion and above the directly emitted light.

Provided is a receiver device with an earpiece for securing the receiver device in an auditory canal. The receiver device further comprises a receiver with a sound outlet direction and an adapter for affixing the receiver in the earpiece, with a sound from the receiver being conducted through the adapter. The adapter diverts the sound from the sound outlet direction in a divergent direction.

A semiconductor light emitting device (A1) includes a case (1) and a plurality of semiconductor light emitting elements (3) arranged in the case. The case (1) is formed with a plurality of reflectors (11) each in the form of a truncated cone surrounding a respective one of the semiconductor light emitting elements (3). Current is applied to each of the semiconductor light emitting elements (3) via two wires (6). Each of the wires (6) includes a first end, and a second end opposite to the first end. The first end is connected to the semiconductor light emitting element (3), whereas the second end is located outside the space surrounded by the reflector (11).