Modeling method for PSP mismatch model of MOS transistor

Abstract

The invention discloses a modeling method for a PSP mismatch model of an MOS (metal oxide semiconductor) transistor. The modeling method comprises the steps that a device performance mismatch submodule is added to a standard PSP model and comprises fitting parameters and parametric equations relevant to device performance mismatch; the fitting parameters are influence coefficients of influence degrees of the device performance mismatch on essential parameters, namely toxo, vfbo and wot of the PSP model; the device performance mismatch submodule affects variation characteristics of linear threshold voltage Vtlin, saturation threshold voltage Vtsat, linear drain current Idlin and saturation drain current Idsat of the transistor through the influence coefficients; the effects of the device performance mismatch on the gate-oxide thickness toxo, the size-irrelevant flat-band voltage vfbo and the effective trench width variation wot caused by trench blocking doped transverse diffusion are determined; and the gate-oxide thickness toxo, the size-irrelevant flat-band voltage vfbo and the effective trench width variation wot due to the trench blocking doped transverse diffusion are redefined.

Description

technical field [0001] The invention belongs to the field of integrated circuits, in particular to a modeling method for a MOS transistor PSP mismatch model. Background technique [0002] There are different degrees of process fluctuations in the manufacturing process of integrated circuits, and the device performance in the sequence of each process step may affect the performance and cost rate of the chip. With the continuous development of microelectronics technology, the feature size and gate oxide thickness of the device in the CMOS integrated circuit process have reached the order of deep nanometers. Although the performance of the device has been improved, the circuit has become more sensitive to process fluctuations. The process of device characteristics The impact of fluctuations on the performance of integrated circuits is even more serious. Therefore, it is very important to consider and estimate process fluctuations in integrated circuit design. [0003] As an i...

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Problems solved by technology

However, there are few researches on systematically establishing integrated circuit MOSFET process fluctuation models.

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