81 results about "Diffusion field" patented technology

A dielectric material layer is formed on a bottom surface and sidewalls of a trench in a semiconductor substrate. The silicon oxide layer forms a drift region dielectric on which a field plate is formed. Shallow trench isolation may be formed prior to formation of the drift region dielectric, or may be formed utilizing the same processing steps as the formation of the drift region dielectric. A gate dielectric layer is formed on exposed semiconductor surfaces and a gate conductor layer is formed on the gate dielectric layer and the drift region dielectric. The field plate may be electrically tied to the gate electrode, may be an independent electrode having an external bias, or may be a floating electrode. The field plate biases the drift region to enhance performance and extend allowable operating voltage of a lateral diffusion field effect transistor during operation.

A disposable structure displaced from an edge of a gate electrode and a drain region aligned to the disposable structure is formed. Thus, the drain region is self-aligned to the edge of the gate electrode. The disposable structure may be a disposable spacer, or alternately, the disposable structure may be formed simultaneously with, and comprise the same material as, a gate electrode. After formation of the drain regions, the disposable structure is removed. The self-alignment of the drain region to the edge of the gate electrode provides a substantially constant drift distance that is independent of any overlay variation of lithographic processes.

The invention discloses a method for manufacturing a laterally dual-diffused FET (field effect transistor), belonging to FET manufacturing field, the method is achieved by using the method for manufacturing LDMOS according to standard CMOS manufacturing processes, to realize LDMOS via chart design as following: defining a active layout to form a body extracting area, a source area, a drain area, a channel area, a drift area and a grid area of a LDMOS element; the source area, grid area and drain area are formed according to a re-doping injection layout; the drift area is disposed between the drain area and the channel area; both of the body extracting area and the source area are in grounding connection; using a N well layout to form a low-doping drift area of a N type LDMOS, or using P well layout to form a P type low-doping drift are of a P type LDMOS; using anti-silicification board to prevent the drift area from being silicified; the design of the source area, the drain area and the grid area complies with the normal MOS. The invention can be applied on any standard process, effectively reducing costs, and improving the capability of standard process for manufacturing special elements.

A method for detecting and identifying structures of interest such as colonic polyps or similar structures like lung nodules in volumetric (medical) images data is provided. The method includes obtaining a heat diffusion field (HDF) by applying a heat diffusion scheme to a volume of interest that includes structures. The obtained heat diffusion field is then used for identifying a structure of interest from the structures in the volume of interest using a geometrical analysis of the heat diffusion field. The heat diffusion scheme is, at least partly, governed by non-linear diffusion parameters. The identification includes two parts: (i) the computation of a spherical symmetry parameter, and (ii) the performance of a local analysis of the volume of interest and computation of a triangulization parameter.

The utility model relates to a monolithic fabrication technology for the enhanced and depletion VDMOS, belonging to a technology applying for fabricating a enhanced and a depletion VDMOS with a high voltage (650V) common drain in one IC, which is characterized in that the material of the VDMOS adopting a N(100) substrate doped arsenic, which has a resistivity below 0.005 Omega-CM, the thickness of the epitaxy is 55Mum, the resistivity of the epitaxy is 24 Omega-CM. The withstand voltage can be stable on 650V, and up to 700V. To add a depletion VDMOS on the surface of the enhanced VDMOS, the depletion area needs a individual switching voltage adjustment, which is adding once more VT impurity, while adjusting the pre-and post process. The utility model has the advantages of fewer photoetching, low cost and simple fabricating control.

The invention relates to the technical field of semiconductor device and integrated circuit fabrication technologies and discloses a method for preparing a DMOS power transistor with a fully self aligned strip-type gate. The method comprises: A. epitaxial growth is carried out on a substrate, and a field area is oxidized thereafter, thereby forming a field oxide layer; B. the field oxide layer in active area is etched, a gate region is oxidized, then, amorphous silicon is deposited, and the deposited amorphous silicon is doped thereafter; C. lithography, etching and boron injection are carried out on the amorphous silicon after being doped, and the injected boron is pushed forward under high temperature, thereby forming a P-type well region; D. the amorphous silicon is injected with arsenic to form a shallow source region, and then a side wall is formed by deposition and anti-etching; E. boron is injected into the amorphous silicon, a cobalt film is deposited, and then cobalt silicide is formed, and P-type well contact is formed by making use of the cobalt silicide; F. boron-phosphorosilicate glass is deposited, and pulling holes are formed by lithography and etching; G. metal is deposited by sputtering, and lithography and etching are carried out thereafter. The invention simplifies the fabrication process, reduces the fabrication cost and improves the operating frequency of the DMOS power transistor.

The invention belongs to the field of marine pollution risk assessment and monitoring, and particularly relates to a marine oil spill risk assessment method. The marine oil spill risk assessment method comprises the following steps of (1) risk source assessment; (2) risk diffusion calculation; (3) sensitivity analysis; and (4) oil spill risk division. The concrete operation of the step (2) is that a climate state marine oil spill risk diffusion model is established based on the marine environment, the hydrodynamic characteristics and the wind field variations of different seasons of the research marine area by using an oil particle drift diffusion simulation method, each oil spill risk source risk diffusion field is monthly calculated and the level of the oil spill risk is determined through superposition calculation. The climate state marine oil spill risk diffusion model is established so that the requirement of high-resolution calculation of the oil spill risk diffusion precision can be met, the calculation burden can also be saved and integrated oil spill risk calculation of the marine area level is enabled to be feasible.

The invention provides a transverse power component with high K insulating regions. An insulating column region with a high dielectric constant is led to the inside of a drift region of the power component. The high K insulating regions and N-type column regions are distributed in an alternate mode. The insulating column region extends into a semi-conductor region. The insulating column region with the high dielectric constant has a field-reduction function. Surface electric field distribution of the drift region and optimal drift region concentration can be optimized through increase of the dielectric constant of the insulating column region, and accordingly voltage endurance and conductive performance of the component are improved. A transverse diffusion field effect transistor LDMOS or a transverse PN diode or a transverse insulated gate bipolar transistor LIGBT made according to the structure has the advantages of being high in breakdown voltage, low in on resistance, simple in process, low in cost and the like.

The invention discloses a transverse diffusion field effect transistor. The transverse diffusion field effect transistor comprises a second-conductive-type-doped buried layer formed in a first-conductive-type-doped drifting region; the buried layer is provided with multiple buried layer sections with different concentrations and different depths; each adjacent two buried layer sections are arranged in a staggered manner longitudinally, so that a JFET effect between a channel region and the drifting region is lowered, and the current conduction region in the drifting region is enlarged when the device is conducted; the doping concentration of the buried layer section nearest to the channel region is greater than that of other buried layer sections; and due to the doping concentration of the buried layer section nearest to the channel region, the auxiliary drifting region on the side face of the channel region can be fully depleted at the initial stage of a drain terminal voltage. The invention also discloses a manufacturing method for the transverse diffusion field effect transistor. By adoption of the transverse diffusion field effect transistor, the low voltage breakdown can be prevented, the breakdown voltage can be increased, the conduction region of the leakage current can be enlarged, and the conduction resistance of the device can be lowered.

The invention discloses a field effect transistor of a radio frequency lateral double-diffusion which comprises a P-type substrate. A P-type epitaxial layer is arranged on the P-type substrate, a light dope drift region is formed in the P-type epitaxial layer, and a first layer of faraday shield and a second layer of faraday shield is arranged on the upper portion of the P-type epitaxial. The light dope drift region further comprises two second time filling region of N-type light dope drift (NLDD), which respectively placed on the lower portion of the first layer of faraday shield and the second layer of faraday shield. The field effect transistor of the radio frequency lateral double-diffusion has the advantages of surpassing the performance of prior structural device, achieving higher breakdown voltage (above 120 volts), and meanwhile reducing the on-resistance of prior structural device. Meanwhile the invention further discloses a preparation method of the transistor.

The application provides a multi-channel transient electromagnetic (MTEM) virtual wave field extraction device and method and relates to the field of coalfield hydrogeology and physical geography. The method comprises steps of extracting virtual wave field data of a full time domain diffusion field; extracting virtual wave field data of each split window diffusion field; and performing related superposition of a full time domain extraction result and split window extraction results, and taking the superposition results as a virtual wave field extraction result. A stable and smooth virtual wave field waveform curve can be obtained, and the anti-interference capability is strong.

The invention discloses a radio frequency transverse double-diffusion field effect transistor. The radio frequency transverse double-diffusion field effect transistor comprises a P-type substrate, a P-type epitaxial layer and a P well, wherein the P-type epitaxial layer is formed on the P-type substrate in an epitaxial growth mode; the P well is located in the P-type epitaxial layer, formed in an ion injection mode and used for forming a channel; a P buried layer is arranged in the P-type epitaxial layer, formed in an ion injection mode and located below the P well, and makes contact with the P well. The radio frequency transverse double-diffusion field effect transistor can effectively lower base resistance of a parasitic bipolar transistor, thereby restraining the parasitic bipolar transistor from being conductive. The drift region with light dope runs out through the P buried layer and the P well together, electric fields on the surface of the drift region are evenly distributed, electric field intensity of the lower portion, close to the drain terminal edge, of a polysilicon gate is reduced, and therefore a hot carrier is restrained from being injected into an oxidation layer, close to the drain terminal edge, of the polysilicon gate.

The invention discloses a manufacturing method of a double diffusion field effect transistor, comprising the following steps: greatly increasing the saturation currents of the transistor by increasing the overlapped area of a transistor gate and drift region; changing the electric field distribution on the drift region using an extended grid potential so as to increase breakdown voltages; and synchronously, inhibiting the GIDL effect resulted from the overlapped area using the thick silicon dioxide under the gate at the overlapped area so as to reduce drain currents of transistor. In addition, the method can change the high-voltage breakdown position of the transistor from a transverse junction area to a longitudinal junction area, namely, the high-voltage breakdown position of the transistor is at the strongest junction area, thereby improving the voltage endurance of the double diffusion field effect transistor.

The invention belongs to the field of production of optical diffusion films and particularly relates to an optical diffusion film and a production process thereof. The production process includes the steps of producing diffusion liquid, stirring, moving the diffusion liquid to a trough of a coating machine, allowing the trough to feed from the ends and discharge from the middle, and coating one face of a base film with an optical diffusion layer; producing anti-sticking liquid and mixing, moving the anti-sticking liquid to the trough of the coating machine, allowing the trough to feed from the ends and discharge from the middle, and coating the other face of the base film with an antistatic layer. The optical diffusion film produced by the production process has high light transmittance and haze value; the optical coatings can well attach to base material; light permeating the diffusion film is soft and even; the optical diffusion film also has excellent anti-sticking property. A stirrer is disposed in each of containers of diffusion liquid and anti-sticking liquid, the diffusion liquid and the anti-sticking liquid are rotated, and diffusing particles and anti-sticking particles are avoided settling; a reflow device is provided, the trough feeds from the ends and discharges from the middle, liquid cycling is ensured, particle settlement is avoided, and yield of the optical diffusion field is increased.

The invention relates to an N-type silicon-on-insulator transverse double-diffusion field effect transistor, which comprises an N underlay, wherein buried oxygen is arranged on the N-type underlay, an N-type extension layer is arranged on the buried oxygen, an N-type buffering well and a P-type body area are arranged inside the N-type extension layer, an N-type anode area is arranged inside the N-type buffering well, an N-type cathode area and a P-type body contact area are arranged inside the P-type body area, a grid oxidized layer and a field oxidized layer are arranged within a given range on the surface of the N-type extension layer, the upper surface of the grid oxidized layer is provided with a polysilicon grid, and a passivation layer and a metal layer are also arranged within a given range on the surface of the transistor. The N-type silicon-on-insulator transverse double-diffusion field effect transistor is characterized in that: the N-type extension layer is also provided with a P-type well area, the P-type well area and the P-type body area form staircase-shaped P-type doping, the doping concentration of the P-type well area is lower than the doping concentration of the P-type body area, one side of the P-type well area is tangential to the field oxidized layer, and the other side of the P-type well area is pushed against the P-type body area. By adopting the structure, the field density and the collision ionization rate at a beak position can be remarkably reduced, so the output characteristics can be effectively improved.

The invention provides a high-resolution ground nuclear magnetic resonance imaging method, solving the problem that the traditional ground nuclear magnetic resonance imaging method meets the bottleneck in the aspect of further improving the interpretation precision of underground water. A damping method least square method is applied, a nuclear magnetic resonance electromagnetic field and a seismic wave field equation are solved, and wave field conversion is achieved, and the seismic wave field discrete data of each receiving coil on the measuring line can be obtained; the deconvolution is obtained by fitting seismic wave field discrete data to each receiving coil on the measuring line, the waveform broadening effect of the wave field conversion is eliminated; the mutual relation of all points in the synthetic aperture range is obtained on the basis of the related superposition principle, so that correlation point superposition is realized, the detection signal-to-noise ratio is improved, and the synthetic aperture virtual seismic wave field composite value on the measuring line is obtained; by means of the Kirchhoff's migration imaging theory, the seismic wave fluctuation equationis solved to realize the underground water-containing structure migration imaging. The high-precision imaging of the water-containing layer is achieved based on mathematical integration transformation between the nuclear magnetic resonance response diffusion field and the pseudo-seismic fluctuation field, and the defects that a traditional nuclear magnetic resonance data interpretation method ispoor in water-containing layer edge resolution are avoided, and the method has certain significance for further application and popularization of the ground nuclear magnetic resonance technology.

The invention discloses a field effect transistor of a radio frequency lateral double-diffusion which comprises a P-type substrate. A P-type epitaxial layer is formed on the P-type substrate in an epitaxial growth mode, and a veneer of monox layer is deposited on the upper portion of the P-type epitaxial layer. A veneer of metal layer is deposited on the monox layer and formed a faraday layer in an etching form. A veneer of silicon nitride layer is arranged between the monox layer and the faraday layer. The field effect transistor of the radio frequency lateral double-diffusion has the advantages of reducing one metal deposition process, meanwhile achieving higher breakdown voltage (BV), reducing the electric field intensity of the lower portion of gate-oxide edge, and helping to restrain domino effect of (HCI) hot carrier injection.

The invention discloses a transient electromagnetic tunnel advanced prediction method under a tunnel boring machine construction condition. The method comprises the following steps of firstly, subtracting TBM machine theory response from an acquisition signal, removing a part of TBM response, and through a mathematical transformation relation and corresponding signal processing, converting a transient electromagnetic diffusion field signal into a virtual wave field signal satisfying an independent component analysis requirement; secondly, using an information independent component analysis algorithm to carry out TBM interference separation and extracting an tunnel transient electromagnetic geological characteristic signal; and finally, using Born approximate inversion to realize underground medium virtual wave field inversion imaging, combining a global apparent resistivity definition to realize the interpretation of a geologic anomaly in front of a tunnel face, and completing the transient electromagnetic advanced geological prediction of a TBM excavation tunnel. In the invention, low-resistance geological anomaly information in front of the face can be effectively extracted, TBMmachine interference is suppressed, and the key problem of the advanced prediction of a transient electromagnetic method in a TBM construction tunnel is effectively solved.

The invention discloses a radio frequency transverse double-diffusion field effect transistor. A drifting region is of a non-uniform doping structure. The invention further discloses a manufacturing method for the radio frequency transverse double-diffusion field effect transistor. Three times of N-type ion injection is adopted in the drifting region to form a non-uniform N-type structure, self-alignment perpendicular injection of low-dosage medium energy is conducted in the first time of N-type ion injection, self-alignment oblique angle injection of low-dosage low energy is conducted in the second time of N-type ion injection, and then the third time of N-type ion injection is conducted at the position, away from polysilicon gates by a certain distance, in the drifting region through template definition. According to the radio frequency transverse double-diffusion field effect transistor and the manufacturing method thereof, on the condition of a thick Faraday shield oxidation layer, the output capacitance is reduced, the hot carrier injection capability and the robustness are enhanced, and the manufacturing technology is simple.

The invention provides a water-bearing geologic body water-rich property prediction method based on a transient electromagnetic method, and relates to the technical field of mine safety prevention andcontrol. The water-bearing geologic body water-rich property prediction method based on the transient electromagnetic method comprises the following steps of step 1, conducting mine transient electromagnetic detection; step 2, acquiring double-field information data of the water-containing geologic body and drilling water-rich property information data; step 3, constructing a water-rich propertyintelligent discrimination model of the water-containing geologic body; and step 4, predicting the water-rich property of the water-containing geologic body. The method is applied to detection construction and data processing explanation of a mine transient electromagnetic method, and water-rich property feature extraction and sample set construction are performed by adopting double-field information of a transient electromagnetic diffusion field and a pseudo-seismic fluctuation field, so that the defect of single information feature of transient electromagnetic original data is overcome; a deep neural network algorithm is adopted to carry out optimization approximation on the complex nonlinear relationship between the sample data and the water-containing geologic body water-rich propertyinformation, and deep mining and grading prediction of the water-containing geologic body water-rich property information are achieved.

The invention relates to a static sounding composite type geochemical microelectrode probe system. The static sounding composite type geochemical microelectrode probe system comprises a base, a static penetration probe and at least one microelectrode, wherein the static penetration probe and the microelectrodes are arranged on the base; the static penetration probe is arranged at the center of the base; the microelectrodes are distributed around the static penetration probe; the length of a conical tip of each static penetration probe is 4 to 8cm more than the length of a conical tip of the microelectrode. The static sounding composite type geochemical microelectrode probe system has the advantages that the static penetration probe is combined with the microelectrodes, and the static penetration threshold value is set according to the extreme breaking strength of the microelectrode, so as to ensure that the microelectrode stops penetrating into a precipitate before reaching the extreme breaking strength, and avoid the damage to the microelectrode; the penetrating depth of the microelectrode is larger; the microelectrode probe system can be applied into a seabed base multi-point in-situ long-term observing system; the multi-point accurate positioning function is effectively realized, the data of multiple detection points in the detection area can be obtained according to requirements, and the space distribution information of an active diffusion field is obtained after analysis.

The invention discloses a radio frequency horizontal double-diffusion-field effect transistor. An epitaxial layer is developed on a P type substrate. The structure of the epitaxial layer is a stepped structure of a P type light dope epitaxial layer, an N type light dope epitaxial layer, a P type heavy dope epitaxial layer, and an N type heavy dope epitaxial layer from bottom to top. Radio frequency lateral diffusion of metal-oxide-semiconductor (RFLDMOS) of the radio frequency horizontal double-diffusion-field effect transistor is provided with RDSON which is lower than RDSON of a normal RFLDMOS and larger BV and meanwhile provided with smaller output capacitance. Meantime, the radio frequency horizontal double-diffusion-field effect transistor adopts an epitaxial growth technology, the thickness, the conduction type, the dosage concentration and the like of the epitaxial layer are easy to control, and an ion implantation and a photoetching process in a drift region is reduced once.