The invention provides a lateral double-
diffusion field effect transistor, a manufacturing method, a
chip and a circuit, and relates to the field of semiconductors. The
transistor comprises a substrate, a
body region, a drift region, a source
electrode, a drain
electrode and a substrate groove, wherein the substrate groove is of a bowl-shaped structure with a smooth bottom; the field plate
oxide layer is formed in the substrate groove, and the thickness of the field plate
oxide layer is smaller than the depth of the substrate groove; the
gate oxide layer is formed on the upper surface of the substrate without forming the substrate groove between the source
electrode and the field plate
oxide layer and the groove wall surface, close to the source electrode and not covered by the field plate oxide layer, of the substrate groove; the
polycrystalline silicon layer is formed on the upper surface of the
gate oxide layer and covers part of the field plate oxide layer, the
gate oxide layer and the
polycrystalline silicon layer formed on the upper surface of the gate oxide layer jointly serve as a gate, and the field plate oxide layer and the
polycrystalline silicon layer covering part of the field plate oxide layer jointly serve as a field plate. According to the invention, the control capability of the gate to the channel can be improved, the on-resistance is reduced, the
breakdown voltage is improved, and the device size is reduced.