Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof
A field effect transistor, lateral double diffusion technology, applied in semiconductor/solid state device manufacturing, semiconductor devices, electrical components, etc., to achieve high breakdown voltage and reduce on-resistance.
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[0056] In order to enable your examiner to have a further understanding and understanding of the purpose, features and effects of the present invention, the following detailed description with the accompanying drawings is as follows.
[0057] Such as figure 2 As shown, the RFLDMOS device structure of the present invention includes on the P-type substrate 21, a P-type epitaxial layer 22 is grown, and a gate oxide layer 23 is grown by thermal oxygen; polysilicon is deposited, and the photolithography plate defines and etches the polysilicon Gate 24; then on the P-type epitaxial layer 22 defined by a photolithography and ion implantation to form a lightly doped drift region (NLDD) 25; in the lightly doped drift region 25 for the second doping to form two The second NLDD implantation region 26. The two second NLDD implantation regions 26 are respectively the implantation region 261 under the first layer of Faraday Shield and the implantation region 262 under the second layer of Farad...
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