Provided is an elastic wave device capable of suppressing spurs in a Rayleigh mode without causing the value of a
fractional bandwidth to be too large. An elastic wave device (1) is provided with a support substrate (3), a
silicon oxide layer (4) provided on the support substrate (3), a
lithium niobate layer (5) provided on the
silicon oxide layer (4), and an IDT
electrode (6) provided on the
lithium niobate layer (5). When the
wavelength defined by the
electrode finger
pitch of the IDT
electrode (6) is
lambda, the thickness of the
silicon oxide layer (4) is 0
lambda or more. The thickness of the IDT electrode (6) is represented by TIDT [
lambda], the density of the IDT electrode (6) is represented by [rho] [g / cm3], the duty ratio of the IDT electrode (6) is represented by duty, the
cutting angle of the
lithium niobate layer (5) is represented by LNcut [degree], the thickness of the
lithium niobate layer (5) is represented by TLN [lambda], the thickness of the
silicon oxide layer (4) is represented by TSiO2 [lambda], the
fractional bandwidth in the SH mode is represented by BW [%], and the
electromechanical coupling coefficient in the Rayleigh mode is represented by ksaw2 [%]. TIDT, [rho], duty, LNcut, TLN, and TSiO2 are values within the range in which BW derived from formula 1 is 12% or less and ksaw2 derived from formula 2 is 0.1% or less.