Broadband power amplifier based on transformer coupling

Abstract

The invention discloses a broadband power amplifier based on transformer coupling, and relates to the technical field of radio frequency integrated circuits, and a matching network based on transformer coupling effectively expands the working bandwidth of the power amplifier. The broadband power amplifier adopts a two-stage structure, the two stages adopt pseudo-differential cascode structures, a driving stage adopts a neutralizing capacitance technology to improve the circuit stability, and a power stage adopts a thick-gate transistor to improve the gain; input matching adopts a mode that a common-source gate inductor is respectively coupled with a common-gate and common-source inter-stage inductor and a common-source parallel inductor, and inter-stage and output broadband matching is realized through a magnetic coupling resonant cavity structure, so that the broadband high-gain performance of the power amplifier is realized.

Description

Technical Field

[0001] The present invention belongs to the field of radio frequency integrated circuits, and in particular relates to a broadband power amplifier based on transformer coupling. Background Art

[0002] The power amplifier is an important component of the transmitter, and its related technology has been one of the research focuses in recent years. There are usually many ways to realize broadband power amplifiers, such as current reuse technology combined with resistor feedback, frequency interleaving technology, and bandwidth extension technology based on transformer coupling. The current reuse technology has a simple structure, but the additional inductance will increase the chip area; the frequency interleaving technology has good gain flatness and flexible design, but it usually sacrifices gain and efficiency; the bandwidth extension technology based on transformer coupling has two basic structures: magnetic coupling resonant cavity structure and traditional inductive coupling structure. The former can not only achieve broadband matching, but also single-end and double-end conversion; the latter has multiple implementation forms to effectively expand the bandwidth, such as the coupling of gate and source inductance, the coupling of source and drain inductance, etc.

[0003] Existing broadband power amplifiers are usually designed based on the bandwidth extension technology of transformer coupling. There are relatively few introductions to the input matching network composed of multiple inductors. On this basis, studying various forms of inductor coupling is of great significance to further improve gain and expand working bandwidth. Summary of the invention

[0004] The purpose of the present invention is to provide a design scheme of a broadband power amplifier based on CMOS technology to further improve the power amplifier gain and expand the working bandwidth. The process adopted is TSMC 40nm CMOS, which has the advantages of high integration and low cost compared with compound semiconductors (GaN, GaAs, etc.).

[0005] In order to solve the above technical problems, the specific technical solutions of the present invention are as follows:

[0006] A broadband power amplifier based on transformer coupling realizes input matching by coupling the gate inductance of the common source stage with the inductance between the common gate and common source stages, and realizes inter-stage matching and output matching by using the magnetic coupling resonant cavity structure. The schematic diagram of the circuit is shown in Figure 1 Specifically, it includes an input matching network, a driving stage circuit, an inter-stage matching network, a power stage circuit and an output matching network; the driving stage circuit and the power stage circuit are cascaded; the output of the input matching network is connected to the input of the common source transistor in the driving stage circuit, the output of the driving stage circuit is connected to one end of the inter-stage matching network, the other end of the inter-stage matching network is connected to the input of the common source transistor in the power stage circuit, and the output of the power stage circuit is connected to the output matching network.

[0007] Furthermore, the input matching network adopts a differential symmetrical structure, half of which includes a DC blocking capacitor C P1 , parallel resistance R P , series capacitor C P2 , the inductance L in the weak coupling transformer TR1 P1 and L P2 , the inductance L in the weak coupling transformer TR2 P2 and L P3 ; DC blocking capacitor C P1 One end is connected to the positive end of the input differential signal, and the other end is connected to the series capacitor C P2 One end and parallel resistor R P One end of the series capacitor C P2 And the parallel resistor R P The other end is connected to the inductor L in transformer TR1 P2 One end and the inductor L P1 One end of the inductor L P2 The other end is connected to the common source transistor M 1SP The gate and neutralization capacitor C NN One end and the bias resistor R 1BSP One end of the inductor L P1 The other end of the inductor L N1 One end of the transformer TR2 inductor L P3 One end of the common source transistor M 1SP The other end is connected to the drain of the common gate transistor M 1GP The other half contains the DC blocking capacitor C N1 , parallel resistance R N , series capacitor C N2 , the inductance L in the weak coupling transformer TR1 N1 and L N2 , the inductance L in the weak coupling transformer TR2 N2 and L N3 ; DC blocking capacitor C N1 One end is connected to the negative terminal of the input differential signal, and the other end is connected to the series capacitor C N2 One end and parallel resistor R N One end of the series capacitor C N2 And the parallel resistor R N The other end is connected to the inductor L in transformer TR1 N2 One end and the inductor L N1 One end of the inductor L N2 The other end is connected to the common source transistor M 1SN The gate and neutralization capacitor C NP One end and the bias resistor R 1BSN One end of the inductor L N1 The other end of the inductor LP1 One end of the transformer TR2 inductor L N3 One end of the common source transistor M 1SN The other end is connected to the drain of the common gate transistor M 1GN The source.

[0008] Furthermore, the driver stage circuit adopts a pseudo differential structure, and half of the common source transistor M 1SP , common-gate transistor M 1GP , bias resistor R 1BSP and neutralizing capacitor C NP ; Common source transistor M 1SP The gate connection bias resistor R 1BSP One end of the neutral capacitor C NN One end and the inductor L in transformer TR2 P2 One end, R 1BSP The other end is connected to the gate voltage V BS1 , M 1SP The source of M is grounded. 1SP The drain of the transformer TR2 is connected to the inductor L P3 One end and the neutralizing capacitor C NP One end of the common source transistor M 1GP The gate connection gate capacitance C 1G One end and the bias resistor R 1BG One end, M 1GP The source connection inductor L P3 The other end, M 1GP The drain of the transistor M is connected to the input of the interstage matching network; the other half contains the common source transistor M 1SN , common-gate transistor M 1GN , bias resistor R 1BSN and neutralizing capacitor C NN ; Common source transistor M 1SN The gate connection bias resistor R 1BSN One end of the neutral capacitor C NP One end and the inductor L in transformer TR2 N2 One end, R 1BSN The other end is connected to the gate voltage V BS1 , M 1SN The source of M is grounded. 1SN The drain of the transformer TR2 is connected to the inductor L N3 One end and the neutralizing capacitor C NN One end of the common source transistor M 1GN The gate connection gate capacitance C 1G One end and the bias resistor R 1BG One end, M 1GN The source connection inductor L N3 The other end, M1GN The drain of the circuit is connected to the input of the inter-stage matching network; the gate capacitance C 1G The other end of the bias resistor R 1BG The other end is connected to the gate voltage V BG1 .

[0009] Furthermore, the inter-stage matching network adopts a magnetically coupled resonant cavity structure, including a resistor R PL , R NL , capacitor C O1 , C I2 and transformer TR3; capacitor C O1 One end and the inductor L in transformer TR3 1PP One end is connected to the common gate transistor M 1GP The drain inductor L 1PP The other end is connected to the power supply V DD1 , the inductor L in transformer TR3 1SP One end of the resistor R PL One end, R PL The other end of the capacitor C I2 One end of the bias resistor R 2BSP One end and the common source transistor M 2SP The gate of the capacitor C O1 The other end and the inductor L in transformer TR3 1PN One end is connected to the common gate transistor M 1GN The drain inductor L 1PN The other end is connected to the power supply V DD1 , the inductor L in transformer TR3 1SN One end of the resistor R NL One end, R NL The other end of the capacitor C I2 The other end of the bias resistor R 2BSN One end and the common source transistor M 2SN of the gate.

[0010] Furthermore, the power stage circuit adopts a pseudo differential structure, and half of the circuit includes a common source transistor M 2SP , common-gate transistor M 2GP and bias resistor R 2BSP ; Common source transistor M 2SP The gate connection bias resistor R 2BSP One end and the output of the interstage matching network, R 2BSP The other end is connected to the gate voltage V BS2 , M 2SP The source of M is grounded. 2SP The drain of the common-gate transistor M 2GP The source, M 2GP Using thick gate transistors, M2GP The gate connection gate capacitance C 2G One end and the bias resistor R 2BG One end, M 2GP The drain of the output matching network is connected to the input; the other half contains the common source transistor M 2SN , common-gate transistor M 2GN and bias resistor R 2BSN ; Common source transistor M 2SN The gate connection bias resistor R 2BSN One end and the output of the interstage matching network, R 2BSN The other end is connected to the gate voltage V BS2 , M 2SN The source of M is grounded. 2SN The drain of the common-gate transistor M 2GN The source, M 2GN Using thick gate transistors, M 2GN The gate connection gate capacitance C 2G One end and the bias resistor R 2BG One end, M 2GN The drain of the output is connected to the input of the matching network; the gate capacitor C 2G The other end of the bias resistor R 2BG The other end is connected to the gate voltage V BG2 .

[0011] Furthermore, the output matching network adopts a magnetically coupled resonant cavity structure, including a capacitor C O2 , C O and transformer TR4; capacitor C O2 One end and the inductor L in the transformer TR4 2PP One end is connected to the common gate transistor M 2GP The drain inductor L 2PP The other end is connected to the power supply V DD2 , the inductor L in transformer TR4 2SP One end of the capacitor C O One end of the capacitor C O2 The other end and the inductor L in the transformer TR4 2PN One end is connected to the common gate transistor M 2GN The drain inductor L 2PN The other end is connected to the power supply V DD2 , the inductor L in transformer TR4 2SN One end of the capacitor C O the other end.

[0012] Compared with the prior art, the present invention has the following beneficial effects:

[0013] The broadband power amplifier proposed in the present invention adopts a two-stage structure, both stages adopt a pseudo-differential common source and common gate structure, the driving stage adopts a neutralizing capacitor technology to improve circuit stability, the power stage adopts a thick gate transistor to improve gain, the input matching adopts a common source stage gate inductor coupled with the common gate and common source stage inter-stage inductor and the common source stage parallel inductor respectively, and the inter-stage and output broadband matching is achieved through a magnetically coupled resonant cavity structure, thereby achieving broadband high gain performance of the power amplifier.

[0014] Compared with the existing broadband power amplifier circuit based on transformer coupling, the present invention proposes a new inductive coupling method, that is, coupling the common-source stage gate inductor with the common-gate common-source stage inter-stage inductor and the common-source stage parallel inductor respectively, and utilizing the weak coupling between the inductors to realize a new input matching network to expand the working bandwidth. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a circuit principle diagram of the broadband power amplifier proposed by the present invention.

[0016] Figure 2 1 is a graph showing the stability factor and S11 changing with the coupling coefficient k2 in the transformer TR2, wherein (a) shows the stability factor changing with k2, and (b) shows the S11 changing with k2.

[0017] Figure 3 The broadband power amplifier proposed in the present invention has a maximum gain of 29.2 dB at 6.65 GHz and a 3 dB bandwidth of 1.9-7.5 GHz.

[0018] Figure 4 The saturated output power and power added efficiency vary with frequency. The broadband power amplifier proposed in the present invention has a saturated output power of 28.7 dBm at 3.5 GHz and a power added efficiency of 37.6%. DETAILED DESCRIPTION

[0019] In order to better understand the purpose, structure and function of the present invention, a broadband power amplifier based on transformer coupling proposed by the present invention is further described in detail below with reference to the accompanying drawings.

[0020] like Figure 1 As shown, a broadband power amplifier based on transformer coupling proposed in the present invention comprises two-stage circuits and five parts, namely an input matching network, a driving stage circuit, an inter-stage matching network, a power stage circuit and an output matching network. The output of the input matching network is connected to the gate of the common source transistor in the driving stage circuit, the output of the driving stage circuit is connected to one end of the inter-stage matching network, the other end of the inter-stage matching network is connected to the input of the common source transistor in the power stage circuit, and the output of the power stage circuit is connected to the output matching network.

[0021] The input matching network adopts a differential symmetrical structure, half of which contains a DC blocking capacitor C P1 , parallel resistance R P , series capacitor C P2 , the inductance L in the weak coupling transformer TR1 P1 and L P2 , the inductance L in the weak coupling transformer TR2 P2 and L P3 ; DC blocking capacitor C P1 One end is connected to the positive end of the input differential signal, and the other end is connected to the series capacitor C P2 One end and parallel resistor R P One end of the series capacitor C P2 And the parallel resistor R P The other end is connected to the inductor L in transformer TR1 P2 One end and the inductor L P1 One end of the inductor L P2 The other end is connected to the common source transistor M 1SP The gate and neutralization capacitor C NN One end and the bias resistor R 1BSP One end of the inductor L P1 The other end of the inductor L N1 One end of the transformer TR2 inductor L P3 One end of the common source transistor M 1SP The other end is connected to the drain of the common gate transistor M 1GP The other half contains the DC blocking capacitor C N1 , parallel resistance R N , series capacitor C N2 , the inductance L in the weak coupling transformer TR1 N1 and L N2 , the inductance L in the weak coupling transformer TR2 N2 and L N3 ; DC blocking capacitor C N1 One end is connected to the negative terminal of the input differential signal, and the other end is connected to the series capacitor C N2 One end and parallel resistor R N One end of the series capacitor C N2 And the parallel resistor R N The other end is connected to the inductor L in transformer TR1 N2 One end and the inductor L N1 One end of the inductor L N2 The other end is connected to the common source transistor M 1SN The gate and neutralization capacitor C NP One end and the bias resistor R 1BSN One end of the inductor L N1The other end of the inductor L P1 One end of the transformer TR2 inductor L N3 One end of the common source transistor M 1SN The other end is connected to the drain of the common gate transistor M 1GN The source.

[0022] The driver stage circuit adopts a pseudo differential structure, half of which contains a common source transistor M 1SP , common-gate transistor M 1GP , bias resistor R 1BSP and neutralizing capacitor C NP ; Common source transistor M 1SP The gate connection bias resistor R 1BSP One end of the neutral capacitor C NN One end and the inductor L in transformer TR2 P2 One end, R 1BSP The other end is connected to the gate voltage V BS1 , M 1SP The source of M is grounded. 1SP The drain of the transformer TR2 is connected to the inductor L P3 One end and the neutralizing capacitor C NP One end of the common source transistor M 1GP The gate connection gate capacitance C 1G One end and the bias resistor R 1BG One end, M 1GP The source connection inductor L P3 The other end, M 1GP The drain of the transistor M is connected to the input of the interstage matching network; the other half contains the common source transistor M 1SN , common-gate transistor M 1GN , bias resistor R 1BSN and neutralizing capacitor C NN ; Common source transistor M 1SN The gate connection bias resistor R 1BSN One end of the neutral capacitor C NP One end and the inductor L in transformer TR2 N2 One end, R 1BSN The other end is connected to the gate voltage V BS1 , M 1SN The source of M is grounded. 1SN The drain of the transformer TR2 is connected to the inductor L N3 One end and the neutralizing capacitor C NN One end of the common source transistor M 1GN The gate connection gate capacitance C 1G One end and the bias resistor R 1BG One end, M 1GN The source connection inductor L N3 The other end, M1GN The drain of the circuit is connected to the input of the inter-stage matching network; the gate capacitance C 1G The other end of the bias resistor R 1BG The other end is connected to the gate voltage V BG1 .

[0023] The inter-stage matching network adopts a magnetically coupled resonant cavity structure, including a resistor R PL , R NL , capacitor C O1 , C I2 and transformer TR3; capacitor C O1 One end and the inductor L in transformer TR3 1PP One end is connected to the common gate transistor M 1GP The drain inductor L 1PP The other end is connected to the power supply V DD1 , the inductor L in transformer TR3 1SP One end of the resistor R PL One end, R PL The other end of the capacitor C I2 One end of the bias resistor R 2BSP One end and the common source transistor M 2SP The gate of the capacitor C O1 The other end and the inductor L in transformer TR3 1PN One end is connected to the common gate transistor M 1GN The drain inductor L 1PN The other end is connected to the power supply V DD1 , the inductor L in transformer TR3 1SN One end of the resistor R NL One end, R NL The other end of the capacitor C I2 The other end of the bias resistor R 2BSN One end and the common source transistor M 2SN of the gate.

[0024] The power stage circuit adopts a pseudo differential structure, and half of it contains a common source transistor M 2SP , common-gate transistor M 2GP and bias resistor R 2BSP ; Common source transistor M 2SP The gate connection bias resistor R 2BSP One end and the output of the interstage matching network, R 2BSP The other end is connected to the gate voltage V BS2 , M 2SP The source of M is grounded. 2SP The drain of the common-gate transistor M 2GP The source, M 2GP Using thick gate transistors, M 2GPThe gate connection gate capacitance C 2G One end and the bias resistor R 2BG One end, M 2GP The drain of the output matching network is connected to the input; the other half contains the common source transistor M 2SN , common-gate transistor M 2GN and bias resistor R 2BSN ; Common source transistor M 2SN The gate connection bias resistor R 2BSN One end and the output of the interstage matching network, R 2BSN The other end is connected to the gate voltage V BS2 , M 2SN The source of M is grounded. 2SN The drain of the common-gate transistor M 2GN The source, M 2GN Using thick gate transistors, M 2GN The gate connection gate capacitance C 2G One end and the bias resistor R 2BG One end, M 2GN The drain of the output is connected to the input of the matching network; the gate capacitor C 2G The other end of the bias resistor R 2BG The other end is connected to the gate voltage V BG2 .

[0025] The output matching network adopts a magnetically coupled resonant cavity structure, including capacitor C O2 , C O and transformer TR4; capacitor C O2 One end and the inductor L in the transformer TR4 2PP One end is connected to the common gate transistor M 2GP The drain inductor L 2PP The other end is connected to the power supply V DD2 , the inductor L in transformer TR4 2SP One end of the capacitor C O One end of the capacitor C O2 The other end and the inductor L in the transformer TR4 2PN One end is connected to the common gate transistor M 2GN The drain inductor L 2PN The other end is connected to the power supply V DD2 , the inductor L in transformer TR4 2SN One end of the capacitor C O the other end.

[0026] like Figure 2 As shown in (a), as the coupling coefficient k2 gradually increases, the stability factor gradually becomes less than zero, that is, the circuit is unstable; Figure 2As shown in (b), as the coupling coefficient k2 gradually increases, the area where S11 is less than -10dB gradually decreases. Therefore, by reversely coupling the common-source stage gate inductance with the common-gate common-source stage inductance, the operating bandwidth can be expanded while ensuring the circuit stability.

[0027] The broadband power amplifier designed by the present invention adopts a 1.2 / 3.3V power supply voltage. Figure 3 It can be seen that the designed broadband power amplifier has a maximum gain of 29.2dB at 6.65GHz, a 3dB bandwidth of 1.9-7.5GHz, and a gain flatness of 2.47dB within the band. Figure 4 The curves of saturated output power and power added efficiency changing with frequency are given. Figure 4 It can be seen that the saturated output power and power added efficiency of the designed broadband power amplifier at 3.5 GHz are 28.7 dBm and 37.6% respectively, and the 3 dB bandwidth is 2–5.5 GHz.

[0028] It is to be understood that the present invention is described by some embodiments, and it is known to those skilled in the art that various changes or equivalent substitutions may be made to these features and embodiments without departing from the spirit and scope of the present invention. In addition, under the teachings of the present invention, these features and embodiments may be modified to adapt to specific circumstances and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are within the scope of protection of the present invention.

Claims

1. A broadband power amplifier based on transformer coupling, characterized in that: It comprises an input matching network, a driving stage circuit with a neutralizing capacitor, an interstage matching network, a power stage circuit with a thick gate transistor and an output matching network; the driving stage circuit and the power stage circuit are cascaded; the output of the input matching network is connected to the input of the common source transistor in the driving stage circuit, the output of the driving stage circuit is connected to one end of the interstage matching network, the other end of the interstage matching network is connected to the input of the common source transistor in the power stage circuit, and the output of the power stage circuit is connected to the output matching network.

2. A transformer-coupled broadband power amplifier according to claim 1, characterized in that: The input matching network adopts a differential symmetrical structure, half of which contains a DC blocking capacitor C P1 , parallel resistance R P , series capacitor C P2 , the inductance L in the weak coupling transformer TR1 P1 and L P2 , the inductance L in the weak coupling transformer TR2 P2 and L P3 ; DC blocking capacitor C P1 One end is connected to the positive end of the input differential signal, and the other end is connected to the series capacitor C P2 One end and parallel resistor R P One end of the series capacitor C P2 And the parallel resistor R P The other end is connected to the inductor L in transformer TR1 P2 One end and the inductor L P1 One end of the inductor L P2 The other end is connected to the common source transistor M 1SP The gate and neutralization capacitor C NN One end and the bias resistor R 1BSP One end of the inductor L P1 The other end of the inductor L N1 One end of the transformer TR2 inductor L P3 One end of the common source transistor M 1SP The other end is connected to the drain of the common gate transistor M 1GP The other half contains the DC blocking capacitor C N1 , parallel resistance R N , series capacitor C N2 , the inductance L in the weak coupling transformer TR1 N1 and L N2 , the inductance L in the weak coupling transformer TR2 N2 and L N3 ; DC blocking capacitor C N1 One end is connected to the negative terminal of the input differential signal, and the other end is connected to the series capacitor C N2 One end and parallel resistor R N One end of the series capacitor C N2 And the parallel resistor R N The other end is connected to the inductor L in transformer TR1 N2 One end and the inductor L N1 One end of the inductor L N2 The other end is connected to the common source transistor M 1SN The gate and neutralization capacitor C NP One end and the bias resistor R 1BSN One end of the inductor L N1 The other end of the inductor L P1 One end of the transformer TR2 inductor L N3 One end of the common source transistor M 1SN The other end is connected to the drain of the common gate transistor M 1GN The source.

3. The transformer-coupled broadband power amplifier according to claim 1, characterized in that: The driving stage circuit adopts a pseudo differential structure, and half of it includes a common source transistor M 1SP , common-gate transistor M 1GP , bias resistor R 1BSP and neutralizing capacitor C NP ; Common source transistor M 1SP The gate connection bias resistor R 1BSP One end of the neutral capacitor C NN One end and the inductor L in transformer TR2 P2 One end, R 1BSP The other end is connected to the gate voltage V BS1 , M 1SP The source of M is grounded. 1SP The drain of the transformer TR2 is connected to the inductor L P3 One end and the neutralizing capacitor C NP One end of the common source transistor M 1GP The gate connection gate capacitance C 1G One end and the bias resistor R 1BG One end, M 1GP The source connection inductor L P3 The other end, M 1GP The drain of the transistor M is connected to the input of the interstage matching network; the other half contains the common source transistor M 1SN , common-gate transistor M 1GN , bias resistor R 1BSN and neutralizing capacitor C NN ; Common source transistor M 1SN The gate connection bias resistor R 1BSN One end of the neutral capacitor C NP One end and the inductor L in transformer TR2 N2 One end, R 1BSN The other end is connected to the gate voltage V BS1 , M 1SN The source of M is grounded. 1SN The drain of the transformer TR2 is connected to the inductor L N3 One end and the neutralizing capacitor C NN One end of the common source transistor M 1GN The gate connection gate capacitance C 1G One end and the bias resistor R 1BG One end, M 1GN The source connection inductor L N3 The other end, M 1GN The drain of the circuit is connected to the input of the inter-stage matching network; the gate capacitance C 1G The other end of the bias resistor R 1BG The other end is connected to the gate voltage V BG1 .

4. The transformer-coupled broadband power amplifier according to claim 1, characterized in that: The inter-stage matching network adopts a magnetically coupled resonant cavity structure and includes a resistor R PL , R NL , capacitor C O1 , C I2 and transformer TR3; capacitor C O1 One end and the inductor L in transformer TR3 1PP One end is connected to the common gate transistor M 1GP The drain inductor L 1PP The other end is connected to the power supply V DD1 , the inductor L in transformer TR3 1SP One end of the resistor R PL One end, R PL The other end of the capacitor C I2 One end of the bias resistor R 2BSP One end and the common source transistor M 2SP The gate of the capacitor C O1 The other end and the inductor L in transformer TR3 1PN One end is connected to the common gate transistor M 1GN The drain inductor L 1PN The other end is connected to the power supply V DD1 , the inductor L in transformer TR3 1SN One end of the resistor R NL One end, R NL The other end of the capacitor C I2 The other end of the bias resistor R 2BSN One end and the common source transistor M 2SN of the gate.

5. The transformer-coupled broadband power amplifier according to claim 1, characterized in that: The power stage circuit adopts a pseudo differential structure, and half of the power stage circuit includes a common source transistor M 2SP , common-gate transistor M 2GP and bias resistor R 2BSP ; Common source transistor M 2SP The gate connection bias resistor R 2BSP One end and the output of the interstage matching network, R 2BSP The other end is connected to the gate voltage V BS2 , M 2SP The source of M is grounded. 2SP The drain of the common-gate transistor M 2GP The source, M 2GP Using thick gate transistors, M 2GP The gate connection gate capacitance C 2G One end and the bias resistor R 2BG One end, M 2GP The drain of the output matching network is connected to the input; the other half contains the common source transistor M 2SN , common-gate transistor M 2GN and bias resistor R 2BSN ; Common source transistor M 2SN The gate connection bias resistor R 2BSN One end and the output of the interstage matching network, R 2BSN The other end is connected to the gate voltage V BS2 , M 2SN The source of M is grounded. 2SN The drain of the common-gate transistor M 2GN The source, M 2GN Using thick gate transistors, M 2GN The gate connection gate capacitance C 2G One end and the bias resistor R 2BG One end, M 2GN The drain of the output is connected to the input of the matching network; the gate capacitor C 2G The other end of the bias resistor R 2BG The other end is connected to the gate voltage V BG2 .

6. The transformer-coupled broadband power amplifier according to claim 5, characterized in that: The output matching network adopts a magnetically coupled resonant cavity structure and includes a capacitor C O2 , C O and transformer TR4; capacitor C O2 One end and the inductor L in the transformer TR4 2PP One end is connected to the common gate transistor M 2GP The drain inductor L 2PP The other end is connected to the power supply V DD2 , the inductor L in transformer TR4 2SP One end of the capacitor C O One end of the capacitor C O2 The other end and the inductor L in the transformer TR4 2PN One end is connected to the common gate transistor M 2GN The drain inductor L 2PN The other end is connected to the power supply V DD2 , the inductor L in transformer TR4 2SN One end of the capacitor C O the other end.

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