A broadband high-gain-flatness power amplifier

Abstract

The invention belongs to the field of radio frequency microwave integrated circuit design, in particular to a broadband high-gain-flatness power amplifier. The power amplifier mainly includes: an input matching network composed of a high coupling factor transformer and a capacitor resistor; a differential common-source driver amplifier with neutralization capacitance; an inter-stage matching network composed of high coupling factor transformers; a differential common-source power amplifier with neutralizing capacitance for power amplification; and an output matching network which is composed of a high-coupling-factor transformer and a load capacitor. The power amplifier adopts high-coupling-factor transformers in three-stage matching network. The in-band gain fluctuation of broadband is reduced by compensating three-stage matched gain fluctuation, which effectively solves the problem of poor gain flatness caused by large inter-stage matched gain fluctuation of traditional broadband power amplifiers and improves the gain at the same time. Compared with the prior art, the invention can significantly improve the gain flatness of the wideband power amplifier while realizing high gain.

Description

technical field [0001] The invention belongs to the technical field of radio-frequency microwave integrated circuits, and in particular relates to a wide-band high-gain flatness power amplifier applied to radio-frequency phased array multifunctional transceiver components, which can be used in phased array systems such as wireless communication and radar detection. Background technique [0002] In recent years, with the continuous improvement of CMOS technology, the use of CMOS technology to implement power amplifiers has attracted more and more researchers' attention because of its low cost and high integration. In systems such as high-speed data communication, phased array radar, and software radio, high requirements are placed on the bandwidth and in-band gain flatness of power amplifiers. However, due to the low power supply voltage of the CMOS process and the large variation of input and output impedance with frequency, it is full of challenges to achieve high gain flat...

AI Technical Summary

Problems solved by technology

However, at present, when using transformers to design broadband power amplifiers, it is only limited to the separate design of each matching network. Therefore, the superposition of fluctuations in the gain bands of multiple matching networks often leads to poor gain flatness. How to achieve better gain of broadband power amplifiers Flatness is also a hotspot of current research

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