Radio frequency power amplifier

Abstract

The invention discloses a radio frequency power amplifier, which is integrated on the same chip. The radio frequency power amplifier comprises an input matching network, a first stage amplifying circuit, an inter-stage matching network, a second stage amplifying circuit, an output matching network, a first biasing circuit and a second biasing circuit; and the two stage amplifying circuits both adopt SiGe HBTs (Heterojunction Bipolar Transistor) in common emitter connection. The radio frequency power amplifier disclosed by the invention can realize full-chip integration; and thus, the integration level is improved, the cost is reduced, the application is simplified, the voltage swing and the working current of the circuit can be improved, the gain and the maximum output power of the circuit can be improved, and the frequency performance of a component can be improved; and the SiGe HBT can adopt a high-voltage tube and has a relatively high withstand voltage, so the voltage endurance capability of the circuit can be improved.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to a radio frequency power amplifier. Background technique [0002] In a wireless communication system, a radio frequency power amplifier is required to receive and amplify wireless signals. Such as figure 1 Shown is the circuit diagram of the existing RF power amplifier, including: [0003] A single-stage amplifier composed of NMOS transistor M101, the source of NMOS transistor M101 is grounded, the gate of NMOS transistor M101 is biased by a DC voltage and receives the input signal VIN, and a connection between the input signal VIN and the gate of NMOS transistor M101 Enter the matching network. The drain of the NMOS transistor M101 is connected to the power supply voltage VDD through the choke inductor L101. [0004] The first end of the capacitor C101 is connected to the drain of the NMOS transistor M102, the second end of the capacitor C101 outputs the output signal VOU...

AI Technical Summary

Problems solved by technology

[0005] figure 1 In the structure shown, the single-stage amplifier is realized by CMOS technology. For CMOS technology, the reduction of feature size makes the withstand voltage of the transistor drop sharply, resulting in low breakdown voltage, low output power and gain.

In addition, the performance of on-chip passive devices is poor, especially the Q value of on-chip inductors is too low, which seriously affects the performance of power amplifiers. Therefore, components such as inductors often use off-chip methods, that is, the passive devices of RF power amplifiers implemented by existing CMOS processes such as Inductors and active devices such as CMOS devices often cannot be formed on the same chip, that is, the full chip integration of the entire RF power amplifier cannot be realized

Since the inductor needs to be manufactured off-chip, compared with a fully integrated RF power amplifier in which all components are integrated on the same chip, the cost of the existing RF power amplifier will be high and the application is inconvenient

[0006] except if figure 1 In addition to the RF power amplifiers realized by the existing CMOS technology shown, the existing RF power amplifiers are also implemented by gallium arsenide (GaAs) heterojunction bipolar transistors (HBT). Although GaAsHBT has better performance, it cannot be compared with Silicon (Si) process integration; in the field of semiconductor manufacturing, only silicon-based devices can achieve large-scale manufacturing, and GaAsHBT cannot be integrated with silicon processes, so the cost is very high

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