57results about How to "Improve frequency performance" patented technology

A socket assembly that forms a solderless electrical interconnection between terminals on a singulated integrated circuit device and another circuit member. The socket housing has an opening adapted to receive the singulated integrated circuit device. The compliant printed circuit is positioned relative to the socket housing to electrically couple with the terminals on a singulated integrated circuit device located in the opening. The compliant printed circuit includes a dielectric base layer printed onto a surface of a fixture, while leaving cavities in the surface of the fixture exposed. A plurality of contact members are formed in the plurality of cavities in the fixture and coupled to the dielectric base layer. The contact members are exposed wherein the compliant printed circuit is removed from the fixture. At least one dielectric layer with recesses corresponding to a target circuit geometry is printed on the dielectric base layer. A conductive material is deposited in at least a portion of the recesses to form conductive traces electrically coupling the contact members to the other circuit member.

A programmable logic device has programmable phase-shifting circuitry. The phase-shifting circuitry is used to generate a set of skewed clock signals that is used to adjust the relative timing of device elements in a circuit synthesized in the programmable logic device. By suitably adjusting the relative timing of the device elements, the circuit critical path lengths are effectively reduced leading to improved circuit frequency performance. Algorithms are provided for establishing clock skew values that lead to improved circuit performance. The algorithms are incorporated in computer aided design tools to enable automatic optimization of circuit designs.

A method of and system for frequency clocking in a processor core are disclosed. In this system, at least one processor core is provided, and that at least one processor core has a clocking subsystem for generating an analog output clock signal at a variable frequency. Digital frequency control data and an analog signal are both transmitted to that at least one processor core; and that processor core uses the received analog signal and digital frequency control data to set the frequency of the output clock signal of the clocking subsystem. In a preferred implementation, multiple cores are asynchronously clocked and the core frequencies are independently set.

A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.

The invention discloses a method for preparing a diamond base FET device with the T-similar-type grid shelter autocollimation technology, and relates to the technical field of methods for manufacturing semiconductor devices. The method comprises the step of forming a high-resisting diamond layer on a high temperature resistance substrate, the step of forming a conducting channel in the high-resisting diamond layer, the step of covering the surface of the high-resisting diamond layer with a metal mask layer, the step of photoetching a table-board, the step of removing a metal mask outside the table-board area through corrosive liquid, the step of forming grids on the metal mask in a photoetching mode, the step of removing the metal mask in the middle of a source leaking area through the corrosive liquid and forming source leakage, the step of manufacturing the T-similar-type grids in the corrosion area, the step of oxidizing or nitriding the outer sides of metal grids and forming a dielectric layer, and the step of enabling the T-similar-type grids to serve as a shield. According to the method, the T-similar-type grid shelter autocollimation technology is adopted, the distance between a grid source position and a grid leakage position is effectively shortened and is basically equal to the grid length, and the grid source resistance and grid leak resistance are reduced.

The invention discloses an internally matching network for a microwave power transistor and a manufacturing method of the internally matching network. The internally matching network comprises an internally matching mass optical memory (MOM) capacitor, a lower electrode outgoing line (5), a first upper electrode outgoing line (6) and a second upper electrode outgoing line (7), wherein the lower electrode outgoing line (5) of the MOM capacitor is led out of the upper surface (4), which is exposed by photoetching, of a lower electrode, and the other end of the lower electrode outgoing line is connected with a grounding pin of a tube core (8) transistor. The internally matching network has the advantages that the lengths of the electrode outgoing lines are shortened, the performance of the internally matching transistor is improved, a manufacturing process of the internally matching power transistor is simplified, the difficulty of the process is reduced, the utilization rate of a tube shell is improved, and the development period is shortened.

The invention provides the structure of a quantum cascade detector, which comprises a substrate, a lower ohmic contact layer, a barrier isolation layer, a multi-cycle active region structure layer, an upper ohmic contact layer, an upper electrode and a lower electrode, wherein the lower ohmic contact layer is arranged on the substrate and is used for carrying out the high-concentration doping process to achieve the ohmic contact with electrode materials; the barrier isolation layer is arranged at the middle part of the lower ohmic contact layer to form a table top all around the lower ohmic contact layer, wherein the barrier isolation layer is not doped; the multi-cycle active region structure layer is arranged on the barrier isolation layer and constitutes the core part of the detector for detecting light current; the upper ohmic contact layer is arranged on the multi-cycle active region structure layer and is used for carrying out the high-concentration doping process to achieve the ohmic contact with the electrode materials; the upper electrode is prepared on the upper ohmic contact layer; and the lower electrode is prepared on the table top all around the lower ohmic contact layer.

The invention provides a thin SOI longitudinal bipolar transistor and a manufacturing method thereof. In the prior art, a base lead-out region is manufactured in top silicon and is connected with a silicon base region through a base connecting region, which causes the problems of complicated process, over-high base input resistance and interelectrode capacitance, and poor frequency performance ofthe transistor. The transistor of the invention, which is manufactured in the top silicon and is positioned between a first isolation structure and a second isolation structure, comprises a collectorregion, a silicon base region and a silicon emitter region which are sequentially stacked, wherein a collector lead-out region is arranged between the first isolation structure and a third isolation structure, is connected with the collector region, and is isolated from the silicon base region and the silicon emitter region through the third isolation structure; a polycrystalline base region and a polycrystalline emitter region are arranged on the top silicon in parallel; a medium isolation structure is arranged between the polycrystalline base region and the polycrystalline; the opposite outsides of the polycrystalline base region and the polycrystalline are provided with side walls; and the polycrystalline base region and the polycrystalline are connected with the silicon base region and the silicon emitter region respectively. The thin SOI longitudinal bipolar transistor and the manufacturing method thereof can reduce process complexity, effectively reduce the base input resistanceand the interelectrode capacitance, and effectively improve the frequency performance of the transistor.

The invention discloses a microwave transistor of a patterned grid structure. The transistor is provided with a patterned region between the source electrode and the drain electrode of a barrier layer. Within the patterned region, the surface of the barrier layer partially concaves downwards along the thickness direction to form a plurality of grooves. A grid is arranged to cover the patterned region. The length of the grid is larger than the lengths of the grooves along the length direction of the grid, so that the grid can completely cover the grooves. On one hand, by means of the grooves, the grid control capability of a device is improved and the short-channel effect is suppressed. On the other hand, an original heterostructure below the grid is preserved. In this way, the reduction of the conductive capacity due to the density reduction of two-dimensional electron gas can be avoided. Therefore, the current output capability of the device is ensured while the short-channel effect is suppressed at the same time. The invention also discloses a manufacturing method of the above microwave transistor.

The invention discloses a solid aluminum electrolytic capacitor cathode conductive film and a preparation method and application thereof, and belongs to the field of aluminum electrolytic capacitors. The method comprises the following steps: depositing a conductive metal film on the surface of an anode foil dielectric layer of the aluminum electrolytic capacitor by using a vapor deposition method; and leading out a cathode electrode from the deposited conductive layer, namely preparing the conductive film on the surface of the anode foil dielectric layer of the aluminum electrolytic capacitor. According to the gas phase chemical method, the problem that solution molecules are difficult to enter micro holes in the surface of the anode aluminum foil in a liquid phase method is solved, so that the conductive film has high step coverage rate in the micro-nano holes, and the capacity extraction rate of the capacitor is improved. The conductive thin film prepared by adopting the gas phase chemical method has the advantages of compact structure, few impurities, good uniformity and the like.

A multi-band antenna comprising a conductive structure and a plurality of current probes coupled around the conductive structure is disclosed. An existing antenna capable of generating H fields having a first signal line is converted into a multi-signal line antenna with increased frequency capabilities, by mounting a first current probe having a designated frequency range about a periphery of the existing antenna; coupling a second signal line to the first current probe; and performing at least one of transmitting and receiving via at least one of the first and second signal lines, wherein the mounting of the first current probe to the existing antenna improves a voltage standing wave ratio (VSWR) of the existing antenna and the second signal line operates as an independent signal line for signal reception/transmission within the designated frequency range.

The invention provides a co-electrode thin SOI longitudinal bipolar transistor device and a manufacturing method thereof. In the prior art, the transistors does not share an electrode so as to cause incompact device structure and low integration degree, and in addition, the base leading-out area is connected with the silicon base area through the base connecting area so as to cause complex process, high base input resistance and poor frequency performance. The device of the invention comprises a plurality of transistor units provided with first and second transistors; both the first and second transistors have a collector area, a silicon base area and a silicon emitter area which are overlapped in the top silicon in turn and a polycrystalline emitter area arranged on the top silicon; a shared polycrystalline base area is connected with the silicon base areas of the first and second transistors, arranged between the polycrystalline emitter areas of the first and second transistors, and isolated with the polycrystalline emitter areas through a medium isolation structure; and a shared collector leading-out area is arranged between two adjacent transistor units, and two ends of the shared collector leading-out area are connected with the collector areas at two sides respectively. The device has the advantages of compact structure, high integration degree, low base input resistance and good frequency performance.

The present invention provides a system for providing a cross-lateral junction field effect transistor (114) having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate (102). A channel structure (124) is formed along the substrate, having source (120) and drain (122) structures laterally formed on opposites sides thereof. A first gate structure (116) is formed along the substrate, laterally adjoining the channel structure orthogonal to the source and drain structures. A second gate structure (118) is formed along the substrate, laterally adjoining the channel structure, orthogonal to the source and drain structures and opposite the first gate structure.

The invention relates to the technical field of wave absorbing materials and particularly provides an enhanced wave absorbing material structure body. The enhanced wave absorbing material structure body is formed by periodically splicing a plurality of identical structural units, each of the structural units comprises a heat dissipating bottom plate, a first wave absorbing material stacked on theheat dissipating bottom plate, a carrier plate stacked on the surface of the first wave absorbing material, a plurality of heat transfer bodies which pass through the first wave absorbing material from the heat dissipating bottom plate and is in contact with the carrier contact, a reflection enhancement layer which is stacked on the surface of the carrier in a patterned way and is in contact withthe heat transfer bodies, and a second wave absorbing material which is stacked on the reflection enhancement layer and a surface of the carrier which is not covered by the reflection enhancement layer. The enhanced wave absorbing material structure body of the invention has good heat dissipating performance and good wave absorbing performance, and the problem that a flat wave absorbing material has insufficient reflectance at a low frequency is solved.

The invention relates to an electrical contact device (300), in particular to a twin-axial contact device, preferably a ferrule or a shield contact sleeve, for an electrical cable (50) , in particulara twin-axial cable for the automotive industry which comprises crimping sections (301, 303) with openings, in a crimped state of the contact device at/on the cable, the crimping sections (301, 303) which are closed and oval in crimping sections are installed at/on the cable by means of the crimping sections. The invention further relates to a method for assembling an electrical cable, in particular a twin-axial cable, for the automotive industry, wherein when assembling the cable (50), an open crimping section (301, 303) of an electrical contact device or an electrical connecting unit (10) at/on the cable is transformed into a closed crimping section at/on the cable, when transforming the open crimping sections into the closed crimping section, a crimping section which is oval in cross-sections and closed is installed at/on the cable.