A microwave power transistor internal matching network and its manufacturing method

A microwave power and internal matching technology, which is applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of rising overall device cost, scrapping of internal matching devices, scrapping of tubes and shells, etc., to reduce and simplify the requirements. Manufacturing process, the effect of improving performance

Active Publication Date: 2011-12-14
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the matching capacitor in the MOM is inappropriate or has a problem, you must be very careful when replacing it. If it is a little improper, the entire internal matching device will be scrapped, not only the die is wasted, but the shell is also scrapped, resulting in an increase in the overall cost of the device.
It is very difficult to avoid this problem only by careful operation of manual operators

Method used

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  • A microwave power transistor internal matching network and its manufacturing method
  • A microwave power transistor internal matching network and its manufacturing method
  • A microwave power transistor internal matching network and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1 (the embodiment of the matching network in the microwave power transistor that improves the shell utilization rate of the present invention, see Figure 1-Figure 4 )

[0036] An internal matching network for microwave power transistors that improves the utilization of the shell, is characterized in that it includes an internal matching MOM capacitor composed of a lower electrode 1, an oxide medium layer 2 and an upper electrode 3, and a lower electrode lead wire 5, which is used as a first The first upper electrode lead-out line 6 of the matching inductance L1, the second upper electrode lead-out line 7 used as the second matching inductance L2; the lower electrode 1 of the internal matching MOM capacitor is wider than its oxide medium layer 2; the MOM capacitor The lower electrode lead-out line 5 is drawn from the upper surface 4 of the lower electrode exposed by photolithography, and its other end is connected to the ground pin of the transistor core 8; t...

Embodiment 2

[0045] Embodiment 2 (the embodiment of the matching network manufacturing method in the microwave power transistor that improves the shell utilization rate of the present invention, see Figure 1-Figure 3 )

[0046] A method for manufacturing an internal matching network of a microwave power transistor, characterized in that the process steps of the method are:

[0047] a. The silicon wafer is oxidized to form an oxide medium layer 2 between the upper and lower electrodes of the inner matching MOM capacitor;

[0048] b. Fabricate a metal lower electrode 1 that internally matches the MOM capacitor on the oxide medium layer;

[0049] c. Corrosion of silicon wafers;

[0050] d, on the other side of the oxidized medium layer, make the metal upper electrode 3 that matches the MOM capacitor;

[0051] e, photoetching the oxide medium layer, leading the lead wire of the lower electrode of the capacitor from the upper surface 4 of the lower electrode of the capacitor exposed by photol...

Embodiment 3

[0055] Embodiment 3 (the embodiment of the method for replacing the matching network in the microwave power transistor of the present invention to improve the utilization rate of the shell, see Figure 2-Figure 3 )

[0056] When the capacitance value of the internal matching MOM capacitor is not suitable, the replacement steps of the internal matching network of the microwave power transistor are as follows:

[0057] a. Remove the lower electrode lead-out line 5, the first upper electrode lead-out line 6 and the second upper electrode lead-out line 7 on the original inner matching MOM capacitor;

[0058] b. Remove the original internal matching MOM capacitor;

[0059] c. Install the solder and the new internal matching MOM capacitor on the base of the shell in turn, and sinter the new internal matching MOM capacitor;

[0060] d. Bond the lower electrode lead wire 5, the first upper electrode lead wire 6 and the second upper electrode lead wire 7 of the new inner matching MOM...

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Abstract

The invention discloses an internally matching network for a microwave power transistor and a manufacturing method of the internally matching network. The internally matching network comprises an internally matching mass optical memory (MOM) capacitor, a lower electrode outgoing line (5), a first upper electrode outgoing line (6) and a second upper electrode outgoing line (7), wherein the lower electrode outgoing line (5) of the MOM capacitor is led out of the upper surface (4), which is exposed by photoetching, of a lower electrode, and the other end of the lower electrode outgoing line is connected with a grounding pin of a tube core (8) transistor. The internally matching network has the advantages that the lengths of the electrode outgoing lines are shortened, the performance of the internally matching transistor is improved, a manufacturing process of the internally matching power transistor is simplified, the difficulty of the process is reduced, the utilization rate of a tube shell is improved, and the development period is shortened.

Description

technical field [0001] The invention relates to a microwave power transistor internal matching network and a manufacturing method thereof, belonging to the field of semiconductor microelectronic design and manufacturing. Background technique [0002] Microwave high-power transistors have high operating frequency, large core area, and serious parasitic parameters. The input and output impedances of the core are relatively low. If they are directly connected to a microwave system with a characteristic impedance of 50 ohms, due to a serious impedance mismatch, it will cause Transistors cannot achieve high power output, so that the performance of transistors cannot be fully utilized. [0003] Using the internal matching network to improve (transform) the input and output impedance of the die and reduce the influence of parasitic parameters is an effective way to achieve high-power output of microwave power transistors. The quality of the internal matching capacitor has a very i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/66H01L21/02H01L21/50
CPCH01L2224/45144H01L2224/48091H01L2224/49175H01L2924/1305H01L2924/13055H01L2924/3011H01L2924/30111H01L2924/00014H01L2924/00
Inventor 付兴昌霍玉柱潘宏菽
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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